US3838407A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bubble memory organization with two port major/minor loop transfer
Assignee: Texas Instruments Inc
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Filing: 1973-12-28
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Granted: 1974-09-24
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Expires: 1993-12-28
Abstract
Abstract A magnetic bubble organization including a major loop which does not close on itself, but which does pass each of the minor loops in the same order to provide two locations in each minor loop for bubble transfer. Preferably, the two transfer locations on each minor loop are symmetrically located and the transfer mechanism can be one-way transfer gates. This permits transfer out of a minor loop into the major loop at one of the two gates for the minor loop and out of the major loop into the minor loop at the other of the two gates for the minor loop.
Inventors
- 👤 J Juliussen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:43
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0875
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
98 words
A magnetic memory comprising in combination: a non-magnetic substrate, a body of magnetic material capable of supporting magnetic domains secured adjacent one surface of said substrate, said magnetic domains being organized into a non-closed major loop and a plurality of minor loops suitably positioned for transfer of domains, said major loop path lying adjacent said minor loops along two sides thereof, such that a domain traveling on said major loop without transfer twice passes the minor loops in the same order, and means coupled to said body for generating and controllably positioning magnetic domains in said magnetic material.
Claim 2
Dependent Claim
98 words
A magnetic memory comprising in combination: a non-magnetic substrate, a body of magnetic material capable of supporting magnetic domains secured adjacent one surface of said substrate, said magnetic domains being organized into a non-closed major loop and a plurality of minor loops suitably positioned for transfer of domains, said major loop path lying adjacent said minor loops along two sides thereof, such that a domain traveling on said major loop without transfer twice passes the minor loops in the same order, and means coupled to said body for generating and controllably positioning magnetic domains in said magnetic material.
Claim 3
Dependent Claim
17 words
A magnetic memory as set forth in claim 1, wherein said magnetic material is an orthoferrite platelet.
Claim 4
Dependent Claim
20 words
A magnetic memory as set forth in claim 1, wherein said magnetic material is a single crystal magnetic garnet platelet.
Claim 5
Dependent Claim
25 words
A magnetic memory as set forth in claim 1, wherein said magentic material comprises a film of mangetic garnet disposed on a non-magnetic garnet substrate.
Claim 6
Dependent Claim
20 words
A magnetic memory as set forth in claim 1, wherein said magnetic material is an amorphous gadolinium cobalt thin film.
Claim 7
Dependent Claim
23 words
A magnetic memory as set forth in claim 1, wherein said means for generating and controllably positioning magnetic domains includes T-bar permalloy circuits.
Claim 8
Dependent Claim
23 words
A magnetic memory as set forth in claim 1, wherein said means for generating and controllably positioning magnetic domains includes Y-bar permalloy circuits.
Claim 9
Dependent Claim
23 words
A magnetic memory as set forth in claim 1, wherein said means for generating and controllably positioning magnetic domains includes chevron permalloy Circuits.
Claim 10
Dependent Claim
23 words
A magnetic memory as set forth in claim 1, wherein said means for generating and controllably positioning magnetic domains includes X-bar permalloy circuits.
Claim 11
Dependent Claim
26 words
A magnetic memory as set forth in claim 1, wherein the path of said major loop passes correspondingly with respect to each of said minor loops.
Claim 12
Dependent Claim
29 words
A magnetic memory as set forth in claim 1, wherein the path of said major loop passes for domain transfer each of said minor loops at symmetrical locations thereof.
Claim 13
Dependent Claim
22 words
A magnetic memory as set forth in claim 1, and including one-way transfer gates between said major loop and said minor loops.
Claim 14
Dependent Claim
22 words
A magnetic memory as set forth in claim 1, and including two-way transfer gates between said major loop and said minor loops.
Claim 15
Dependent Claim
158 words
A magnetic memory comprising in combination: a non-magnetic substrate, a body of material capable of supporting magnetic domains secured adjacent one surface of said substrate, said magnetic domains being organized into a non-closed major loop and first and second pluralities of said minor loops suitably positioned for transfer of domains, said major loop path lying adjacent said first and second pluralities of minor loops along two sides thereof such that a domain traveling on said major loop without transfer passes said first plurality of minor loops along the first side thereof in a first order, said second plurality of minor loops along the first side thereof in a second order, said first plurality of minor loops along the second side thereof in said first order, and said second plurality of minor loops along the second side thereof in said second order, and means coupled to said body for generating and controllably positioning magnetic domains in said magnetic material.
Claim 16
Dependent Claim
158 words
A magnetic memory comprising in combination: a non-magnetic substrate, a body of material capable of supporting magnetic domains secured adjacent one surface of said substrate, said magnetic domains being organized into a non-closed major loop and first and second pluralities of said minor loops suitably positioned for transfer of domains, said major loop path lying adjacent said first and second pluralities of minor loops along two sides thereof such that a domain traveling on said major loop without transfer passes said first plurality of minor loops along the first side thereof in a first order, said second plurality of minor loops along the first side thereof in a second order, said first plurality of minor loops along the second side thereof in said first order, and said second plurality of minor loops along the second side thereof in said second order, and means coupled to said body for generating and controllably positioning magnetic domains in said magnetic material.
Claim 17
Dependent Claim
24 words
A magnetic memory as set forth in claim 14, wherein said first and second pluralities of minor loops are geometrically aligned in parallel rows.
Claim 18
Dependent Claim
17 words
A magnetic memory as set forth in claim 14, wherein said magnetic material is an orthoferrite platelet.
Claim 19
Dependent Claim
20 words
A magnetic memory as set forth in claim 14, wherein said magnetic material is a single crystal magnetic garnet paltelet.
Claim 20
Dependent Claim
25 words
A magnetic memory as set forth in claim 14, wherein said magnetic material comprises a film of magnetic garnet disposed on a non-magnetic garnet substrate.
Claim 21
Dependent Claim
20 words
A magnetic memory as set forth in claim 14, wherein said magnetic material is an amorphous gadolinium cobalt thin film.
Claim 22
Dependent Claim
23 words
A magnetic memory as set forth in claim 14, wherein said means for generating and controllably positioning magnetic domains includes T-bar permalloy circuits.
Claim 23
Dependent Claim
23 words
A magnetic memory as set forth in claim 14, wherein said means for generating and controllably positioning magnetic domains includes Y-bar permalloy circuits.
Claim 24
Dependent Claim
23 words
A magnetic memory as set forth in claim 14, wherein said means for generating and controllably positioning magnetic domains includes chevron permalloy circuits.
Claim 25
Dependent Claim
23 words
A magnetic memory as set forth in claim 14, wherein said means for generating and controllably positioning magnetic domains includes X-bar permalloy circuits.
Claim 26
Dependent Claim
26 words
A magnetic memory as set forth in claim 14, wherein the path of said major loop passes correspondingly with respect to each of said minor loops.
Claim 27
Dependent Claim
29 words
A magnetic memory as set forth in claim 14, wherein the path of said major loop passes for domain transfer each of said minor loops at symmetrical locations thereof.
Claim 28
Dependent Claim
22 words
A magnetic memory as set forth in claim 14, and including one-way transfer gates between said major loop and said minor loops.
Claim 29
Dependent Claim
22 words
A magnetic memory as set forth in claim 14, and including two-way transfer gates between said major loop and said minor loops.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-09-23 | 1978-03-25 | 1978-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-09-23 | 1982-03-25 | 1982-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-09-23 | 1986-03-25 | 1986-09-24 | $7700.00 | Window Closed / Lapsed |