Silicon purification process

Claim 1

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from a solvent metal and the amount of solvent metal remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing silicon and at least one metal selected from the group consisting of tin, zinc, aluminum, silver and lead, the silicon being present in an amount greater than the eutectic point of the silicon-metal combination, the metal adapted to act as a solvent for the silicon; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase; (c) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals, (d) heating the solid phase to melt a fraction of the solid phase for purposes of removing a substantial amount of metal-silicon combination covering the crystals, the heat being developed in the solid phase by passing an electric current therethrough; and (e) draining the molten phase from the solid phase to separate at least a fraction of the metal-silicon combination covering said crystals of silicon.

Claim 2

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from a solvent metal and the amount of solvent metal remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing silicon and at least one metal selected from the group consisting of tin, zinc, aluminum, silver and lead, the silicon being present in an amount greater than the eutectic point of the silicon-metal combination, the metal adapted to act as a solvent for the silicon; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase; (c) thereafter, removing a substantial part of the molten phase from the solid phase containing said silicon crystals, (d) heating the solid phase to melt a fraction of the solid phase for purposes of removing a substantial amount of metal-silicon combination covering the crystals, the heat being developed in the solid phase by passing an electric current therethrough; and (e) draining the molten phase from the solid phase to separate at least a fraction of the metal-silicon combination covering said crystals of silicon.

Claim 6

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from aluminum and the amount of aluminum remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing about 20 to 80 wt.%, silicon the remainder aluminum and impurities; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten aluminum phase; (c) thereafter, removing a portion of the molten phase from the solid phase containing said silicon crystals, (d) inductively heating the solid phase to melt a fraction of the solid phase for purposes of removing a substantial amount of aluminum-silicon combination covering the crystals by passing an electric current through the solid phase, the heat being applied to provide a temperature in the range of 750° C. to 1300° C.; and (e) draining the molten phase from the solid phase to separate at least a fraction of the aluminum-silicon combination covering said crystals of silicon.

Claim 7

A method for providing a bed of purified silicon crystals wherein silicon is crystallized from aluminum and the amount of aluminum remaining in the crystal bed is reduced to a low level, the method comprising the steps of: (a) providing a molten body containing about 20 to 80 wt.%, silicon the remainder aluminum and impurities; (b) extracting heat from the body to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten aluminum phase; (c) thereafter, removing a portion of the molten phase from the solid phase containing said silicon crystals, (d) inductively heating the solid phase to melt a fraction of the solid phase for purposes of removing a substantial amount of aluminum-silicon combination covering the crystals by passing an electric current through the solid phase, the heat being applied to provide a temperature in the range of 750° C. to 1300° C.; and (e) draining the molten phase from the solid phase to separate at least a fraction of the aluminum-silicon combination covering said crystals of silicon.