US4238760A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-spectrum photodiode devices
Assignee: Bantec Inc
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Filing: 1978-10-06
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Granted: 1980-12-09
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Expires: 1998-10-06
Abstract
Abstract One or more photoelectric device elements are formed beneath the surface of a monolithic semiconductor structure below a surface photoelectric detector device to form a plurality of photoelectric devices having different spectral responses. The surface element is responsive to visible light and the one or more subsurface devices are sensitive to longer wavelength radiation depending upon the depth of the device below the surface of the structure. A two dimensional array of the devices may be formed in a single semiconductor wafer to provide a self-scanning multi-element photosensor array.
Inventors
- 👤 William N. Carr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:41
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F39/00; H10F39/10; H10F39/103; H10F39/12; H10F39/18; H10F39/182; H10F39/1825
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
159 words
A multi-spectrum photodiode device having at least one photodiode pair, each photodiode of the pair operable independent of the other and sensitive to a different wavelength of radiation comprising: a body of semiconductor material of one conductivity type having an epitaxial layer of the same conductivity type on one face thereon; a diffused region of an opposite conductivity type in said body of semiconductor material at said one face under said epitaxial layer and forming a first photodiode therewith, a second diffused region of said opposite conductivity type in said epitaxial layer and forming a second photodiode therewith, said second photodiode being directly over but spaced apart from said first photodiode, a third diffused region of said opposite conductivity type in said epitaxial layer, extending through said layer to said first diffused region and providing contact thereto; and contact to said second diffused region to facilitate output from said second photodiode independent of the output from said first photodiode.
Claim 2
Dependent Claim
159 words
A multi-spectrum photodiode device having at least one photodiode pair, each photodiode of the pair operable independent of the other and sensitive to a different wavelength of radiation comprising: a body of semiconductor material of one conductivity type having an epitaxial layer of the same conductivity type on one face thereon; a diffused region of an opposite conductivity type in said body of semiconductor material at said one face under said epitaxial layer and forming a first photodiode therewith, a second diffused region of said opposite conductivity type in said epitaxial layer and forming a second photodiode therewith, said second photodiode being directly over but spaced apart from said first photodiode, a third diffused region of said opposite conductivity type in said epitaxial layer, extending through said layer to said first diffused region and providing contact thereto; and contact to said second diffused region to facilitate output from said second photodiode independent of the output from said first photodiode.
Claim 3
Dependent Claim
18 words
The photodiode device according to claim 1 including means for gating the output from each of the photodiodes.
Claim 4
Dependent Claim
21 words
The device according to claim 2 wherein said means for gating includes a semiconductor gate at the output from each photodiode.
Claim 5
Dependent Claim
37 words
An N×M array of pairs of photodiode according to claim 1 formed in rows and columns including gating means for sequentially gating the outputs from said photodiode on a row by row or column by column basis.
Claim 6
Dependent Claim
19 words
The array according to claim 4 wherein the array and gating means is formed on a single semiconductor chip.
Claim 7
Dependent Claim
73 words
A photodiode device comprising a plurality of vertically aligned photodiodes, one photodiode being formed at the surface of a semiconductor chip and the other of said plurality of vertically aligned photodiodes being found one under the other within the body of the semiconductor chip, each of the photodiodes producing an output independent of the other through contacts and conducting regions extending into the body of the semiconductor chip to each of said photodiodes.
Claim 8
Dependent Claim
73 words
A photodiode device comprising a plurality of vertically aligned photodiodes, one photodiode being formed at the surface of a semiconductor chip and the other of said plurality of vertically aligned photodiodes being found one under the other within the body of the semiconductor chip, each of the photodiodes producing an output independent of the other through contacts and conducting regions extending into the body of the semiconductor chip to each of said photodiodes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-09 | 1984-06-09 | 1984-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-09 | 1988-06-09 | 1988-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-09 | 1992-06-09 | 1992-12-09 | $7700.00 | Window Closed / Lapsed |