Programmable threshold switchable resistive memory cell array

Claim 2

In a memory array having a plurality of memory cells, word means for selecting a row of said array, a pair of bit lines per column, bit means for selecting a column of said array, and sensing means connected to said pair of bits line for sensing the electrical state of said pair of bit lines, the improvement comprising: each cell including a pair of threshold means each switchable from a high resistance state to a low resistance state when a potential above its threshold is applied, each threshold means is connected to a respective bit line for the cell and have a different threshold; and said sensing means including a bistable latch means for latching in one of two states in response to which threshold means switches first when a cell is selected by a ramp potential.

Claim 3

The memory array according to claim 1 wherein said threshold means have programmable thresholds and including programming means connected to said pair of bit lines for defining a first logic state by programming the thresholds of one of the thresholds means higher than the other threshold means and a second logic state by programming the threshold of the one threshold means lower than the other threshold means.

Claim 4

The memory array according to claim 1 wherein said array includes only one sensing means and all of said pairs of bit lines are connected to said one sensing means.

Claim 5

The memory array according to claim 1 wherein each of said threshold means includes an amorphous element switchable between said high and low resistance state, and means interconnecting said amorphous element and said word select means to isolate said amorphous element when not selected.

Claim 6

In a memory array having a plurality of memory cells, word means for selecting a row of said array, a pair of bit lines per column, bit means for selecting a column of said array, and sensing means connected to said pair of bit lines for sensing the electrical state of said pair of bit lines, the improvement comprising: each cell including a pair of threshold means connected to a respective bit line and each switchable from a high resistance state to a low resistance state when a potential above its threshold is applied, and a pair of bipolar transistors each connecting a respective threshold means to said word means; and said sensing means includes a bistable latch means including insulated gate field effect transistors for latching in one of two states in response to which threshold means switches first when a cell is selected by a ramp potential.

Claim 7

In a memory array having a plurality of memory cells, word means for selecting a row of said array, a pair of bit lines per column, bit means for selecting a column of said array, and sensing means connected to said pair of bit lines for sensing the electrical state of said pair of bit lines, the improvement comprising: each cell including a pair of threshold means connected to a respective bit line and each switchable from a high resistance state to a low resistance state when a potential above its threshold is applied, and a pair of bipolar transistors each connecting a respective threshold means to said word means; and said sensing means includes a bistable latch means including insulated gate field effect transistors for latching in one of two states in response to which threshold means switches first when a cell is selected by a ramp potential.

Claim 8

The memory array according to claim 5 wherein said threshold means have programmable thresholds and including a pair of insulated gate field effect transistor current sources means connected to said pair of bit lines for providing different current levels in each bit line to program the thresholds of the two threshold means for a selected cell to define a first and second polarity of threshold differentials between the threshold means.

Claim 9

The memory array according to claim 5 wherein said threshold means are amorphous elements and said bipolar transistors are NPN transistors in an emitter follower configuration with the base connected to the word means and the amorphous elements connected to the emitters.

Claim 14

The method of writing according to claim 9 wherein said first current is sufficiently small to lower the threshold value of the threshold means and said second current is sufficiently large to reset a threshold means to a high threshold value if it was previously in a low threshold value.

Claim 15

The method of writing according to claim 10 wherein said threshold means are amorphous elements and said currents are selected to program the threshold within the high resistance state of the amorphous elements.