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US4235857A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of nitriding silicon

Assignee: Ceradyne Inc
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Filing: 1979-07-02
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Granted: 1980-11-25
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Expires: 1999-07-02
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Abstract

Abstract A method of manufacturing silicon nitride particles, either in an aglomerated or unaglomerated form, is disclosed. Basically, the particles to be nitrided are placed in an enclosed furnace and heated to a suitable temperature at which the enclosed furnace is filled with an initial gaseous mixture of nitrogen and hydrogen, the mixture containing not more than about 6% by volume hydrogen. Thereafter, the material is heated in the enclosed furnace to a temperature of about 900° C. to about 1000° C. at which time the nitrogen starts to react with the silicon in the furnace. Thereafter, the enclosed furnace is demand filled with a nitriding gas mixture consisting essentially of 1 to 10% by volume helium and about 99 to 90% by volume nitrogen. The furnace is heated to a suitable nitriding temperature and the demand filling of the chamber with the nitriding gas helium/nitrogen combination is continued until the nitriding operation is terminated. The enclosed furnace is then cooled to room temperature and the nitrided silicon material recovered. The use of helium in the nitriding gas obtained all of the benefits one obtains when nitriding gas is a combination of hydrogen and nitrogen, but does not produce an explosive mixture.

Inventors

  • 👤 John A. Mangels

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 05:54
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/584; C04B35/591; C01; C01B; C01B21/00; C01B21/06; C01B21/068; C01B21/0682

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 192 words
A method of nitriding silicon particles which comprises the steps of: placing the silicon particles to be nitrided in an enclosed furnace; filling said enclosed furnace with an initial gaseous mixture of nitrogen and hydrogen, said mixture containing not more than about 6% by volume hydrogen; heating said enclosed furnace with said gaseous mixture therein to a temperature in a range from about 900° C. to about 1000° C.; demand filling said enclosed furnace after it has been heated to said temperature in the range from about 900° C. to about 1000° C. with a nitriding gas mixture consisting essentially of about 1 to 10% by volume helium and about 99 to 90% by volume nitrogen; continue heating said enclosed furnace to a reaction temperature below the melting temperature of silicon; continue demand filling of said enclosed furnace with said helium/nitrogen gas combination until the nitriding operation is terminated; cooling the enclosed furnace to room temperature; and recovering the nitrided silicon material from the enclosed furnace said nitrided silicon material exhibiting a greater strength than a nitrided silicon material prepared according to said method wherein argon is used in place of helium.
Claim 2
Independent Claim 192 words
A method of nitriding silicon particles which comprises the steps of: placing the silicon particles to be nitrided in an enclosed furnace; filling said enclosed furnace with an initial gaseous mixture of nitrogen and hydrogen, said mixture containing not more than about 6% by volume hydrogen; heating said enclosed furnace with said gaseous mixture therein to a temperature in a range from about 900° C. to about 1000° C.; demand filling said enclosed furnace after it has been heated to said temperature in the range from about 900° C. to about 1000° C. with a nitriding gas mixture consisting essentially of about 1 to 10% by volume helium and about 99 to 90% by volume nitrogen; continue heating said enclosed furnace to a reaction temperature below the melting temperature of silicon; continue demand filling of said enclosed furnace with said helium/nitrogen gas combination until the nitriding operation is terminated; cooling the enclosed furnace to room temperature; and recovering the nitrided silicon material from the enclosed furnace said nitrided silicon material exhibiting a greater strength than a nitrided silicon material prepared according to said method wherein argon is used in place of helium.
Claim 3
Dependent Claim 14 words
The method of claim 1 wherein: said silicon particles are aglomerated into an article.
Claim 4
Dependent Claim 15 words
The method of claim 1 wherein: said silicon particles are not aglomerated into an article.
Claim 5
Independent Claim 236 words
A method of nitriding silicon particles which comprises the steps of: placing the silicon particles to be nitrided in an enclosed furnace; drawing a vacuum on said enclosed furnace; heating said enclosed furnace to a temperature in a range from about 600° C. to about 700° C.; filling said enclosed furnace after it has been heated to the temperature in the range from about 600° C. to about 700° C. with an initial gaseous mixture of nitrogen and hydrogen, said mixture containing not more than about 6% by volume hydrogen; heating said enclosed furnace with said gaseous mixture therein to a temperature in a range from about 900° C. to about 1000° C.; demand filling said enclosed furnace after it has been heated to said temperature in the range from about 900° C. to about 1000° C. with a nitriding gas mixture consisting essentially of about 1 to 10% by volume helium and about 99 to 90% by volume nitrogen; continue heating said enclosed furnace to a reaction temperature below the melting temperature of silicon; continue demand filling of said enclosed furnace with said helium/nitrogen gas combination until the nitriding operation is terminated; cooling the enclosed furnace to room temperature; and recovering the nitrided silicon material from the enclosed furnace said nitrided silicon material exhibiting a greater strength than a nitrided silicon material prepared according to said method wherein argon is used in place of helium.
Claim 6
Independent Claim 236 words
A method of nitriding silicon particles which comprises the steps of: placing the silicon particles to be nitrided in an enclosed furnace; drawing a vacuum on said enclosed furnace; heating said enclosed furnace to a temperature in a range from about 600° C. to about 700° C.; filling said enclosed furnace after it has been heated to the temperature in the range from about 600° C. to about 700° C. with an initial gaseous mixture of nitrogen and hydrogen, said mixture containing not more than about 6% by volume hydrogen; heating said enclosed furnace with said gaseous mixture therein to a temperature in a range from about 900° C. to about 1000° C.; demand filling said enclosed furnace after it has been heated to said temperature in the range from about 900° C. to about 1000° C. with a nitriding gas mixture consisting essentially of about 1 to 10% by volume helium and about 99 to 90% by volume nitrogen; continue heating said enclosed furnace to a reaction temperature below the melting temperature of silicon; continue demand filling of said enclosed furnace with said helium/nitrogen gas combination until the nitriding operation is terminated; cooling the enclosed furnace to room temperature; and recovering the nitrided silicon material from the enclosed furnace said nitrided silicon material exhibiting a greater strength than a nitrided silicon material prepared according to said method wherein argon is used in place of helium.
Claim 7
Dependent Claim 14 words
The method of Claim 4 wherein: said silicon particles are aglomerated into an article.
Claim 8
Dependent Claim 15 words
The method of claim 4 wherein: said silicon particles are not aglomerated into an article.

References Cited (Backward Citations)

US3937792A Cited
US3839541A Cited
US4022872A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-11-25 1984-05-26 1984-11-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-11-25 1988-05-26 1988-11-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-11-25 1992-05-26 1992-11-25 $7700.00 Window Closed / Lapsed

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