Patent US4234353A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4234353A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for preparing photovoltaic cells having increased adhesion of the semi-conducting layer and produced thereby to the conducting layer

Assignee: University of Delaware
•
Filing: 1979-04-09
•
Granted: 1980-11-18
•
Expires: 1999-04-09
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Improved adhesion of the semi-conducting layer to the conducting layer in a thin film photovoltaic cell is obtained by incorporating a minor amount of the element or elements of the conducting layer in the semi-conducting layer.

Inventors

  • 👤 Lee F. Donaghey

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 21:45
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/244; H10F71/00; H10F71/125; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 67 words
In a process for preparing a thin film polycrystalline photovoltaic cell which comprises deposition of a semi-conducting layer on a conducting electrode layer, the improvement which comprises increasing the adhesion of the semi-conducting layer to the conducting layer by incorporating from about 0.01 to about 0.0001 mol of the element or elements of the conducting layer per mol of metallic or major component in the semi-conducting layer.
Claim 2
Dependent Claim 67 words
In a process for preparing a thin film polycrystalline photovoltaic cell which comprises deposition of a semi-conducting layer on a conducting electrode layer, the improvement which comprises increasing the adhesion of the semi-conducting layer to the conducting layer by incorporating from about 0.01 to about 0.0001 mol of the element or elements of the conducting layer per mol of metallic or major component in the semi-conducting layer.
Claim 3
Dependent Claim 16 words
A process according to claim 1 wherein the element is tin, zinc, indium, gallium, or aluminum.
Claim 4
Dependent Claim 11 words
A process according to claim 2 wherein the element is indium.
Claim 5
Dependent Claim 11 words
A process according to claim 2 wherein the element is tin.
Claim 6
Dependent Claim 15 words
A process according to claim 1 wherein the semi-conducting layer is based on cadmium sulfide.
Claim 7
Dependent Claim 54 words
An improved cadmium sulfide photovoltaic cell comprising a thin film polycrystalline cadmium sulfide semi-conducting layer on a conducting electrode layer wherein the cadmium sulfide semi-conducting layer comprises from about 0.01 to about 0.0001 mol of the element or elements of the conducting layer per mol of metallic or major component of the semi-conducting layer.
Claim 8
Dependent Claim 54 words
An improved cadmium sulfide photovoltaic cell comprising a thin film polycrystalline cadmium sulfide semi-conducting layer on a conducting electrode layer wherein the cadmium sulfide semi-conducting layer comprises from about 0.01 to about 0.0001 mol of the element or elements of the conducting layer per mol of metallic or major component of the semi-conducting layer.
Claim 9
Dependent Claim 20 words
An improved cadmium sulfide photovoltaic cell according to claim 6 wherein said element is tin, zinc, indium, gallium, or aluminum.

References Cited (Backward Citations)

US3271637A Cited
US3914856A Cited
US4086101A Cited
US4159914A Cited
US4095006A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-11-18 1984-05-19 1984-11-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-11-18 1988-05-19 1988-11-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-11-18 1992-05-19 1992-11-18 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag