Patent US4522197A successfully refreshed from Google Patents.
Patent US4233671A successfully refreshed from Google Patents.
US4233671A
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Read only memory and integrated circuit and method of programming by laser means
Assignee: Leland Stanford Junior University
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Filing: 1979-01-05
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Granted: 1980-11-11
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Expires: 1999-01-05
Abstract
Abstract A programmable read only memory (PROM) includes a first plurality of conductive lines, a second plurality of conductive lines and polycrystalline silicon material therebetween. At the crossing points of the first and second plurality of lines doped regions are provided in the polycrystalline silicon in contact with a second line and which extend at least partially through the material. To provide a diode interconnect at any crossing point, the associated region is irradiated by a laser beam to either cause diffusion of dopant atoms to the underlaying conductive line or activate implanted ions, thereby electrically interconnecting the first and second lines through a diode. The PROM is readily fabricated as part of a monolithic integrated circuit or electrical array and can be programmed after completion of the fabrication process.
Inventors
- 👤 Levy Gerzberg
- 👤 Arnon Gat
- 👤 Roger Melen
- 👤 James F. Gibbons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:08
CPC Classifications
H; H10; H10D; H10D88/00; G; G11; G11C; G11C17/00; G11C17/08; G11C17/14; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
149 words
A read only memory comprising support means, a first plurality of spaced parallel conductive lines on a surface of said support means, said first plurality of conductive lines including dopants of a first conductivity type, a layer of polycrystalline semiconductor material overlaying said first plurality of conductor lines, said layer of polycrystalline semiconductor material including regions of doped material extending at least partially through said layer, said doped regions including dopants of opposite conductivity type, each of said regions being positioned above one line of said first plurality of conductive lines, and a second plurality of spaced parallel conductive lines on the surface of said layer of polycrystalline semiconductor material, said second plurality of conductive lines being skewed with respect to said first plurality of conductive lines with said regions of doped material provided at crossing points of said first plurality of lines and said second plurality of lines.
Claim 2
Dependent Claim
149 words
A read only memory comprising support means, a first plurality of spaced parallel conductive lines on a surface of said support means, said first plurality of conductive lines including dopants of a first conductivity type, a layer of polycrystalline semiconductor material overlaying said first plurality of conductor lines, said layer of polycrystalline semiconductor material including regions of doped material extending at least partially through said layer, said doped regions including dopants of opposite conductivity type, each of said regions being positioned above one line of said first plurality of conductive lines, and a second plurality of spaced parallel conductive lines on the surface of said layer of polycrystalline semiconductor material, said second plurality of conductive lines being skewed with respect to said first plurality of conductive lines with said regions of doped material provided at crossing points of said first plurality of lines and said second plurality of lines.
Claim 3
Dependent Claim
75 words
A read only memory as defined by claim 1 wherein said regions of doped material extend partially through said layer and wherein said first plurality of lines and said second plurality of lines are selectively interconnected through diodes by applying a radiation beam to selected ones of said doped regions to diffuse dopants therein to the conductive line thereunder and provide current paths between said first plurality of lines and said second plurality of lines.
Claim 4
Dependent Claim
31 words
A read only memory as defined by claim 2 wherein said radiation beam is applied to selected ones of said doped regions prior to formation of the second plurality of lines.
Claim 5
Dependent Claim
30 words
A read only memory as defined by claim 2 wherein said radiation beam is applied to selected ones of said doped regions after formation of said second plurality of lines.
Claim 6
Dependent Claim
17 words
A read only memory as defined by claim 1 wherein said said polycrystalline semiconductive material is silicon.
Claim 7
Dependent Claim
29 words
A read only memory as defined by claim 5 wherein said support means includes a monocrystalline silicon substrate and a layer of silicon oxide on a major surface thereof.
Claim 8
Dependent Claim
20 words
A read only memory as defined by claim 6 wherein said first plurality of conductive lines comprise doped polycrystalline silicon.
Claim 9
Dependent Claim
27 words
A read only memory as defined by claim 7 wherein said doped polycrystalline silicon is formed in a layer of polycrystalline silicon by selective doping and annealing.
Claim 10
Dependent Claim
17 words
A read only memory as defined by claim 8 wherein said annealing is provided by selective irradiation.
Claim 11
Dependent Claim
17 words
A read only memory as defined by claim 9 wherein said second plurality of lines comprise metal.
Claim 12
Dependent Claim
18 words
A read only memory as defined by claim 6 wherein said first plurality of conductive lines comprise metal.
Claim 13
Dependent Claim
18 words
A read only memory as defined by claim 6 wherein said monocrystalline silicon substrate includes an integrated circuit.
Claim 14
Dependent Claim
21 words
A read only memory as defined by claim 12 wherein said read only memory is electrically interconnected with said integrated circuit.
Claim 15
Dependent Claim
49 words
A read only memory as defined by claim 1 wherein said regions of doped material extend substantially through said layer and are formed by ion implantation and wherein said first plurality of lines and said second plurality of lines are selectively interconnected through diodes by selectively annealing said regions.
Claim 16
Dependent Claim
49 words
A read only memory as defined by claim 14 wherein each of said regions is implanted with ions of one conductivity type adjacent to one of said first plurality of lines and is implanted with ions of opposite conductivity type adjacent to one of said second plurality of lines.
Claim 17
Dependent Claim
183 words
A semiconductor integrated circuit comprising a single crystalline silicon substrate, at least one active electrical component defined in said substrate by selective doping, an electrically insulating material provided on a major surface of said substrate, and a read only memory formed on said electrically insulative material, said read only memory including a first plurality of spaced parallel conductive lines on said insulative material, said first plurality of conductive lines including dopants of a first conductive type, a layer of polycrystalline silicon material overlying said first plurality of conductive lines, said layer of polycrystalline silicon including doped regions extending at least partially through said layer, said doped regions including dopants of opposite conductivity type, each of said regions being positioned above one line of said first plurality of conductive lines, and a second plurality of spaced parallel conductive lines on the surface of said layer of polycrystalline silicon, said second plurality of conductive lines being skewed with respect to said first plurality of conductive lines with said doped regions provided at crossing points of said first plurality of lines and second plurality of lines.
Claim 18
Dependent Claim
183 words
A semiconductor integrated circuit comprising a single crystalline silicon substrate, at least one active electrical component defined in said substrate by selective doping, an electrically insulating material provided on a major surface of said substrate, and a read only memory formed on said electrically insulative material, said read only memory including a first plurality of spaced parallel conductive lines on said insulative material, said first plurality of conductive lines including dopants of a first conductive type, a layer of polycrystalline silicon material overlying said first plurality of conductive lines, said layer of polycrystalline silicon including doped regions extending at least partially through said layer, said doped regions including dopants of opposite conductivity type, each of said regions being positioned above one line of said first plurality of conductive lines, and a second plurality of spaced parallel conductive lines on the surface of said layer of polycrystalline silicon, said second plurality of conductive lines being skewed with respect to said first plurality of conductive lines with said doped regions provided at crossing points of said first plurality of lines and second plurality of lines.
Claim 19
Dependent Claim
54 words
A semiconductor integrated circuit as defined by claim 16 wherein said first plurality of lines and said second plurality of lines are selectively interconnected by applying a radiation beam to selected ones of said doped regions to thereby provide undirectional current paths between said first plurality of lines and said second plurality of lines.
Claim 20
Dependent Claim
32 words
A semiconductor integrated circuit as defined by claim 16 wherein said first plurality of conductive lines comprise doped polycrystalline silicon formed in a layer of polycrystalline silicon by selective doping and irradiation.
Claim 21
Dependent Claim
17 words
A semiconductor integrated circuit as defined by claim 18 wherein said second plurality of lines comprise metal.
Claim 22
Dependent Claim
19 words
A semiconductor integrated circuit as defined by claim 18 wherein said second plurality of lines comprise doped polycrystalline silicon.
Claim 23
Dependent Claim
29 words
A semiconductor integrated circuit as defined by claim 16 wherein said read only memory comprises a plurality of pairs of first and second conductive lines in a stacked array.
Claim 24
Dependent Claim
118 words
In a programmable read only memory having a first plurality of conductive lines and a second plurality of conductive lines overlaying said first plurality of conductive lines and a layer of polycrystalline semiconductive material therebetween, said layer of polycrystalline semiconductive material including doped regions extending at least partially through said layer, each of said regions being positioned between crossing points of said first plurality of lines and said second plurality of lines, the method of selectively interconnecting through diodes said first plurality of lines and said second plurality of lines including irradiating selected ones of said regions thereby diffusing dopant ions and providing unidirectional current paths between said first plurality of lines and said second plurality of lines.
Claim 25
Dependent Claim
118 words
In a programmable read only memory having a first plurality of conductive lines and a second plurality of conductive lines overlaying said first plurality of conductive lines and a layer of polycrystalline semiconductive material therebetween, said layer of polycrystalline semiconductive material including doped regions extending at least partially through said layer, each of said regions being positioned between crossing points of said first plurality of lines and said second plurality of lines, the method of selectively interconnecting through diodes said first plurality of lines and said second plurality of lines including irradiating selected ones of said regions thereby diffusing dopant ions and providing unidirectional current paths between said first plurality of lines and said second plurality of lines.
Claim 26
Dependent Claim
40 words
The method defined by claim 22 wherein said first plurality of lines comprise polycrystalline silicon material of a first conductivity type, said doped regions being of opposite conductivity type, wherein said step of irradiating a region creates a P-N junction.
Claim 27
Dependent Claim
44 words
The method defined by claim 22 wherein said doped regions extend partially through said layer and wherein said step of irradiating a region diffuses dopants in said region to form a P-N junction between said region and one of said first plurality of lines.
Claim 28
Dependent Claim
36 words
The method defined by claim 22 wherein said doped regions are formed by ion implantation and extend substantially through said layer and wherein said step of irradiating a region anneals said region and activates ions therein.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-11-11 | 1984-05-12 | 1984-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-11-11 | 1988-05-12 | 1988-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-11-11 | 1992-05-12 | 1992-11-11 | $7700.00 | Window Closed / Lapsed |