Process for producing bi-polar charge coupled devices by ion-implantation

Claim 2

A process for producing a charge coupled device for sensors and memories comprising: (a) providing a semiconductor substrate of a first conductivity type; (b) producing regions of a second conductivity type in said semiconductor substrate via ion implantation so as to form a shift channel; (c) producing zones of said first conductivity type in said regions via ion implantation; said regions and zones being arranged in series, with each region being separated from other regions and each zone being separated from other zones; (d) producing a control electrode between an interspace between said zones and above portions of said zones which are adjoin said interspace; and (e) producing a relatively highly doped region of said second conductivity type at each end of said shift channel via ion implantation.

Claim 3

A process as defined in claim 1 wherein said semiconductor substrate comprises a p-doped silicon and said second conductivity type regions are comprised of n-doped silicon.

Claim 4

A process as defined in claim 1 wherein said substrate consists of a p-conducting silicon having a carrier concentration of about 10 14 cm -3 .

Claim 5

A process for producing a charge coupled device for sensors and memories comprising the sequential steps: (a) applying a first insulating layer in a thickness of about 100 nm to a p-conducting silicon substrate; (b) producing first windows in the insulating layer via a photo-lacquer technique; (c) implanting n-doping ions in said first window with a kinetic energy of about 300 KV and in a implantation dose of about 8×10 12 ions cm -2 ; (d) implanting p-doping ions in said first window with a kinetic energy of about 35 KV and in an implantation dose of about 10 11 ions cm -2 ; (e) applying a second insulating layer on the resulting arrangement and providing second windows therein via a photo-lacquer technique so as to provide secondary contacts; (f) applying a layer of doped polysilicon and producing third windows therein; (g) vapour depositing a layer of aluminium over the resulting structure and lifting-off portions of the aluminium layer not on said secondary contacts; (h) applying a further photo-lacquer layer over the entire arrangement and producing fourth windows between spaced apart secondary contacts; (i) implanting n-doping ions in said fourth windows with a kinetic energy of about 100 KV and with an implantation dose of about 8×10 12 ions cm -2 ; (j) removing remaining portions of said aluminium layer; (k) oxidizing said polysilicon layer into an oxide layer; (l) producing fifth windows for aluminium contacts; (m) vapour depositing a layer of aluminium on the resultant structure; (n) fixing aluminium paths from said aluminium layer; and (o) applying a protective oxide layer over the resultant structure.

Claim 6

A process for producing a charge coupled device for sensors and memories comprising the sequential steps: (a) applying a first insulating layer in a thickness of about 100 nm to a p-conducting silicon substrate; (b) producing first windows in the insulating layer via a photo-lacquer technique; (c) implanting n-doping ions in said first window with a kinetic energy of about 300 KV and in a implantation dose of about 8×10 12 ions cm -2 ; (d) implanting p-doping ions in said first window with a kinetic energy of about 35 KV and in an implantation dose of about 10 11 ions cm -2 ; (e) applying a second insulating layer on the resulting arrangement and providing second windows therein via a photo-lacquer technique so as to provide secondary contacts; (f) applying a layer of doped polysilicon and producing third windows therein; (g) vapour depositing a layer of aluminium over the resulting structure and lifting-off portions of the aluminium layer not on said secondary contacts; (h) applying a further photo-lacquer layer over the entire arrangement and producing fourth windows between spaced apart secondary contacts; (i) implanting n-doping ions in said fourth windows with a kinetic energy of about 100 KV and with an implantation dose of about 8×10 12 ions cm -2 ; (j) removing remaining portions of said aluminium layer; (k) oxidizing said polysilicon layer into an oxide layer; (l) producing fifth windows for aluminium contacts; (m) vapour depositing a layer of aluminium on the resultant structure; (n) fixing aluminium paths from said aluminium layer; and (o) applying a protective oxide layer over the resultant structure.

Claim 7

A process as defined in claim 1 wherein said ion implantation steps utilized phosphorus and boron ions.

Claim 8

A process as defined in claim 4 wherein after application of a doped polysilicon layer in step (f), a damage layer is produced by bombarding the polysilicon layer with relatively low energy particles and process steps (g), (h) and (j) are omitted and step (i) is replaced with a deep implantation process conducted at an energy of about 300 KV.

Claim 9

A process as defined in claim 6 wherein said damage layer is produced by particle bombardment carried out with a kinetic energy of about 0.5 to 1 KV and in a dose of about 10 16 particles cm -2 .

Claim 10

A process as defined in claim 6 wherein the polysilicon layer is deposited as an electrically conductive strip for the pulse train electrodes.