Doped oxide buried channel charge-coupled device

Claim 1

A buried channel charge coupled device produced by the steps of: a. forming a thin layer of insulating material at the surface of a semiconductor substrate, b. implanting dopant ions into said layer of insulating material while controlling the energy of the ion implantation source to ensure that the peak of the distribution of dopant ions occurs in said thin layer of insulating material, c. heating the insulated semiconductor substrate to cause dopant ions to diffuse from said thin layer of insulating material into the material of said semiconductor substrate thereby forming said buried channel d. stripping said thin insulating layer overlying said buried layer and forming a clean thin layer of insulating material over said buried layer, said clean thin layer being surrounded by a thicker region of insulating material; and e. forming a plurality of phase electrodes above and insulated from said buried channel.

Claim 3

A method of fabricating a buried channel charge coupled device including steps of: a. forming a thin layer of uniform thickness insulating material on one surface of a semiconductor substrate of one conductivity type; b. forming a stop region including a thicker region of said insulating material defining the periphery of a channel region for said charge coupled device overlaid by said thin layer of insulating material; c. after one of steps (a) and (b) implanting dopant ions of opposite conductivity type into said thin layer of insulating material while controlling the energy of the ion implantation source to ensure that the peak of the distribution of dopant ions occurs in said thin layer of insulating material, and thereafter heating of said substrate to cause dopant ions to diffuse from said thin layer of insulating material into the underlying material of said semiconductor substrate to a substantially uniform depth along the length of said channel region thereby forming said buried channel; d. removing said thin insulating layer overlying the channel region and forming a clean thin layer of insulating material on said buried channel region; and e. forming a series of phase electrodes along the channel region on and insulated from the buried channel region by said clean thin layer of insulating material.

Claim 4

A method of fabricating a buried channel charge coupled device including steps of: a. forming a thin layer of uniform thickness insulating material on one surface of a semiconductor substrate of one conductivity type; b. forming a stop region including a thicker region of said insulating material defining the periphery of a channel region for said charge coupled device overlaid by said thin layer of insulating material; c. after one of steps (a) and (b) implanting dopant ions of opposite conductivity type into said thin layer of insulating material while controlling the energy of the ion implantation source to ensure that the peak of the distribution of dopant ions occurs in said thin layer of insulating material, and thereafter heating of said substrate to cause dopant ions to diffuse from said thin layer of insulating material into the underlying material of said semiconductor substrate to a substantially uniform depth along the length of said channel region thereby forming said buried channel; d. removing said thin insulating layer overlying the channel region and forming a clean thin layer of insulating material on said buried channel region; and e. forming a series of phase electrodes along the channel region on and insulated from the buried channel region by said clean thin layer of insulating material.