US3704178A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming a p-n junction in a semiconductor material
Assignee: Individual
•
Filing: 1969-11-05
•
Granted: 1972-11-28
•
Expires: 1989-11-05
Abstract
Abstract A SOLID OF A FIRST CONDUCTIVITY TYPE HAS A PASSIVATING OXIDE LAYER FORMED ON ONE OF ITS SURFACES; A MASK HAVING AN OPENING THEREIN IS PROVIDED OVER THE LAYER; THE OPENING IS EXPOSED TO ION RADIATION SO AS TO IMPLANT IONS IN THE OXIDE LAYER; AND THE SOLID BODY IS HEATED, THEREBY DRIVING ION DOPANTS FROM THE OXIDE LAYER INTO THE BODY AND PROVIDING A REGION THEREIN HAVING ACONDUCTIVITY OPPOSITE THE FIRST CONDUCTIVE TYPE.
Inventors
- 👤 Bryan H Hill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:03
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/106
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-11-28 | 1976-05-29 | 1976-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-11-28 | 1980-05-29 | 1980-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-11-28 | 1984-05-29 | 1984-11-28 | $7700.00 | Window Closed / Lapsed |