Patent EP0040573B1 successfully refreshed from Google Patents.
US4228201A
Expired / Lapsed
US
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Method for rendering a non-platable semiconductor substrate platable
Assignee: Individual
•
Filing: 1978-08-07
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Granted: 1980-10-14
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Expires: 1998-08-07
Abstract
Abstract A process is described for the reception of electrolytic or electroless plating onto a non-platable semiconductor substrate. The process comprises contacting of the semiconductor substrate with a promoter composition containing metal ions, preferably primary type, selected from the group consisting of nickel, cobalt, iron, and copper, and mixtures thereof, and a reducing agent selected from the group consisting of amine boranes, borohydrides, hydrazine, and derivatives thereof, and thereafter immersion of the substrate in conventional electrolytic or electroless plating baths, e.g., nickel or cobalt-hypophosphite type baths or copper-formaldehyde type baths, for the metallic build-up.
Inventors
- 👤 Nathan Feldstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:58
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/16; C23C18/18; C23C18/1851; C23C18/1872; C23C18/1886; C23C18/1893; C23C18/1889; H; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K3/00; H05K3/10; H05K3/18; H05K3/181; H05K3/22; H05K3/24; H05K3/244; H05K3/245; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
133 words
A process for rendering a non-platable semiconductor substrate platable comprising the step of contacting said semiconductor substrate with a promoter composition comprising metal ions selected from the group consisting of nickel, cobalt, iron, copper, and mixtures thereof, and a reducing agent selected from the group consisting of amine boranes, borohydrides, hydrazine, and derivatives thereof, wherein said reducing agent is capable of chemically reacting with said semiconductor substrate and said metal ions, and further wherein the concentration of said reducing agent relative to said metal ions is so adjusted as to form sufficient metallic sites on the substrate for a subsequent plating step and to permit the initial chemical interaction of the reducing agent with the semiconductor substrate and then the heterogeneous reduction of some of the metal ions present in the promoter composition.
Claim 2
Dependent Claim
133 words
A process for rendering a non-platable semiconductor substrate platable comprising the step of contacting said semiconductor substrate with a promoter composition comprising metal ions selected from the group consisting of nickel, cobalt, iron, copper, and mixtures thereof, and a reducing agent selected from the group consisting of amine boranes, borohydrides, hydrazine, and derivatives thereof, wherein said reducing agent is capable of chemically reacting with said semiconductor substrate and said metal ions, and further wherein the concentration of said reducing agent relative to said metal ions is so adjusted as to form sufficient metallic sites on the substrate for a subsequent plating step and to permit the initial chemical interaction of the reducing agent with the semiconductor substrate and then the heterogeneous reduction of some of the metal ions present in the promoter composition.
Claim 3
Dependent Claim
22 words
The process according to claim 1 wherein said semiconductor substrate is selected from the group consisting of silicon, germanium, and III-V compounds.
Claim 4
Dependent Claim
12 words
The process according to claim 1 wherein said semiconductor substrate is silicon.
Claim 5
Dependent Claim
21 words
The process according to claim 1 wherein the concentration of said reducing agent is in molar excess to said metal ions.
Claim 6
Dependent Claim
12 words
The process according to claim 1 wherein said metal ions are nickel.
Claim 7
Dependent Claim
15 words
The process according to claim 1 wherein said promoter composition is used above room temperature.
Claim 8
Dependent Claim
13 words
The process according to claim 1 wherein said reducing agent is dimethylamine borane.
Claim 9
Dependent Claim
13 words
The process according to claim 1 wherein said reducing agent is a borohydride.
Claim 10
Dependent Claim
12 words
The process according to claim 1 wherein said reducing agent is hydrazine.
Claim 11
Dependent Claim
17 words
The process according to claim 1 further containing the step of heat treating the metallized semiconductor substrate.
Claim 12
Dependent Claim
25 words
The process according to claim 1 further containing the step of depositing metal on the semiconductor substrate containing metallic sites by a chemical plating process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-14 | 1984-04-14 | 1984-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-14 | 1988-04-14 | 1988-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-14 | 1992-04-14 | 1992-10-14 | $7700.00 | Window Closed / Lapsed |