Patent US4227943A successfully refreshed from Google Patents.
US4227943A
Expired / Lapsed
US
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Schottky barrier solar cell
Assignee: Boeing North American Inc
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Filing: 1979-06-04
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Granted: 1980-10-14
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Expires: 1999-06-04
Abstract
Abstract A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr 0 .4) x . Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n + -type conductivity GaAs substrate.
Inventors
- 👤 Marshall J. Cohen
- 👤 James S. Harris, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:45
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/18; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
49 words
A Schottky-barrier type solar cell comprising: an n-type conductivity semiconductor; an (SN) x coating less than 300 A thick on a top surface of said semiconductor, said (SN) x coating being doped with Br; and contact means for electrically contacting said semiconductor and said bromine doped (SN) x coating.
Claim 2
Dependent Claim
49 words
A Schottky-barrier type solar cell comprising: an n-type conductivity semiconductor; an (SN) x coating less than 300 A thick on a top surface of said semiconductor, said (SN) x coating being doped with Br; and contact means for electrically contacting said semiconductor and said bromine doped (SN) x coating.
Claim 3
Dependent Claim
13 words
The solar cell as claimed in claim 1, wherein said semiconductor comprises GaAs.
Claim 4
Dependent Claim
13 words
The solar cell as claimed in claim 1, wherein said semiconductor comprises Si.
Claim 5
Dependent Claim
24 words
The solar as claimed in claim 1, wherein said (SN) x coating is bromine doped to a composition of (SNBr 0 .4) x .
Claim 6
Dependent Claim
19 words
The solar cell as claimed in claim 1, including a semiconductor substrate on a bottom surface of said semiconductor.
Claim 7
Dependent Claim
38 words
The solar cell as claimed in claim 5, wherein said contact means comprises a film of metal on a bottom surface of said substrate and a metal conductor on a portion of a top surface of said coating.
Claim 8
Dependent Claim
53 words
A Schottky-barrier type solar cell comprising: an N + -type conductivity GaAs substrate; an n-type conductivity GaAs layer on a top surface of said substrate; an (SNBr 0 .4) x coating less than 300 A thick on a top surface of said layer; and metal contacts on said substrate and on said coating.
Claim 9
Dependent Claim
53 words
A Schottky-barrier type solar cell comprising: an N + -type conductivity GaAs substrate; an n-type conductivity GaAs layer on a top surface of said substrate; an (SNBr 0 .4) x coating less than 300 A thick on a top surface of said layer; and metal contacts on said substrate and on said coating.
References Cited (Backward Citations)
US4084172A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-14 | 1984-04-14 | 1984-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-14 | 1988-04-14 | 1988-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-14 | 1992-04-14 | 1992-10-14 | $7700.00 | Window Closed / Lapsed |