US4084172A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Highly electronegative (SN)x contacts to semiconductors
Assignee: United States Department of the Navy
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Filing: 1977-06-10
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Granted: 1978-04-11
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Expires: 1997-06-10
Abstract
Abstract Polymeric sulfur nitride is a conductive metallic compound providing a highly electronegative contact for both n- and p- type semiconductor materials. Tests show the electronegativity to be higher than Au. Larger barriers are obtained for n-type semiconductors and smaller barriers, or Ohmics, for p-types.
Inventors
- 👤 Robert A. Scranton
- 👤 Thomas C. McGill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:32
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/86; H10D64/00; H10D64/60; H10D64/62; H10D64/64
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
27 words
A semiconductor structure comprising: a semiconductor substrate, and a metallic-like contact material formed on said substrate, said contact material being a polymeric sulfur nitride (SN) x .
Claim 2
Dependent Claim
27 words
A semiconductor structure comprising: a semiconductor substrate, and a metallic-like contact material formed on said substrate, said contact material being a polymeric sulfur nitride (SN) x .
Claim 3
Dependent Claim
18 words
The structure of claim 1 wherein said substrate is an n-type semiconductor material whereby said contact is rectifying.
Claim 4
Dependent Claim
13 words
The structure of claim 2 wherein said substrate is a compound semiconductor material.
Claim 5
Dependent Claim
19 words
The structure of claim 3 wherein said compound material is selected from a group consisting of ZnS and ZnSe.
Claim 6
Dependent Claim
13 words
The structure of claim 1 wherein said substrate is a p-type semiconductor material.
Claim 7
Dependent Claim
13 words
The structure of claim 5 wherein said substrate is a compound semiconductor material.
Claim 8
Dependent Claim
14 words
The structure of claim 1 wherein said substrate is a compound ionic semiconductor material.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-10 | 1981-10-10 | 1982-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-10 | 1985-10-10 | 1986-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-10 | 1989-10-10 | 1990-04-11 | $7700.00 | Window Closed / Lapsed |