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US4218271A
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US
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Method of manufacturing semiconductor devices utilizing a sure-step molecular beam deposition
Assignee: US Philips Corp
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Filing: 1978-04-12
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Granted: 1980-08-19
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Expires: 1998-04-12
Abstract
Abstract Method of making a semiconductor device which includes a III-V compound stratum. A film consisting of one of the elements Sn, Ge, Si, Be, Mn or Mg is deposited by an M.B.E. process on an exposed surface of the III-V compound stratum. A III-V compound layer doped with the element constituting the film is deposited over the film, when making, for example an F.E.T. An ohmic contact layer is deposited over the film to make an ohmic contact.
Inventors
- 👤 Colin E. C. Wood
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:57
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
61 words
A method of manufacturing a semiconductor device comprising the steps of depositing a first layer of one of the elements Sn, Ge, Si, Be, Mn, or Mg on a III-V compound stratum by molecular beam deposition, and depositing a second layer of a III-V compound material containing said one element as a component on said first layer by molecular beam deposition.
Claim 2
Independent Claim
61 words
A method of manufacturing a semiconductor device comprising the steps of depositing a first layer of one of the elements Sn, Ge, Si, Be, Mn, or Mg on a III-V compound stratum by molecular beam deposition, and depositing a second layer of a III-V compound material containing said one element as a component on said first layer by molecular beam deposition.
Claim 3
Dependent Claim
75 words
A method according to claim 1, wherein said first step deposits a coating of from 10 12 to 10 15 atoms/sq. cm. of said one element on an exposed surface of a semi-insulating III-V compound substrate, and said second step deposits a 0.05 to 1.5 μm thick film of a doped III-V compound on said coating, said doped III-V compound including a dopant of 1×10 16 to 3×10 17 atoms/cm 3 of said one element.
Claim 4
Dependent Claim
12 words
A method according to claim 2, wherein said one element is Sn.
Claim 5
Dependent Claim
15 words
A method according to claim 2, wherein said semiconductor device is a field effect transistor.
Claim 6
Dependent Claim
14 words
A method according to claim 2, wherein said semiconductor device is a laser diode.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-08-19 | 1984-02-18 | 1984-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-08-19 | 1988-02-18 | 1988-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-08-19 | 1992-02-18 | 1992-08-19 | $7700.00 | Window Closed / Lapsed |