Optical transistor structure

Claim 2

A semiconductor optical device comprising: a silicon semiconductor region; energy producing means disposed on said semiconductor region for generating and emitting radiation in response to an electrical signal, said energy means having an edge; means for confining said radiation within said energy means; and reflecting means on the end of said energy producing means and on said semiconductor region for reflecting the radiation from said laser means onto said semiconductor region for creating electron hole pairs.

Claim 3

An integrated optical power transistor comprising: a semiconductor diode including a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type; means for providing current in said semiconductor diode to a load; means for biasing said semiconductor diode; energy producing means on the first semiconductor region of said semiconductor diode for emitting coherent radiation in response to an electrical signal; means for confining said radiation within said energy means; and first reflecting means coupled to said energy producing means and disposed on an area of the surface of the first semiconductor region of said semiconductor diode for reflecting said light emitted from said laser means through said first reflecting means toward said semiconductor diode for creating electron hole pairs therein and thereby creating electrical current therethrough.

Claim 4

An integrated optical power transistor comprising: a semiconductor diode including a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type; means for providing current in said semiconductor diode to a load; means for biasing said semiconductor diode; energy producing means on the first semiconductor region of said semiconductor diode for emitting coherent radiation in response to an electrical signal; means for confining said radiation within said energy means; and first reflecting means coupled to said energy producing means and disposed on an area of the surface of the first semiconductor region of said semiconductor diode for reflecting said light emitted from said laser means through said first reflecting means toward said semiconductor diode for creating electron hole pairs therein and thereby creating electrical current therethrough.

Claim 5

An integrated optical power transistor according to claim 2 further including: second reflecting means for reflecting a portion of the light emitted from said laser means back into said laser means for maintaining lasing action therein.

Claim 6

An integrated optical power transistor according to claim 2 wherein the means for providing current in said semiconductor diode to a load includes: a third semiconductor region disposed on said second semiconductor region, said third semiconductor region having said second conductivity type and a third impurity concentration; an anode electrode disposed on said third semiconductor region; and a cathode electrode disposed on a portion of the first semiconductor region of said semiconductor diode not occupied by said laser means.

Claim 7

An optical transistor according to claim 2 wherein portions of the second semiconductor region of said semiconductor diode extends to the surface of said semiconductor diode thereby isolating portions of the first semiconductor region of said semiconductor diode, said portions of the second semiconductor region being directly under and corresponding in area to said first reflecting means.

Claim 8

An integrated optical power transistor according to claim 3 wherein said first reflecting means includes an edge of said laser means and wherein said second reflecting means includes a layer of transparent insulating material between said laser and semiconductor diodes.

Claim 9

An integrated optical power transistor according to claim 3 wherein said first and second reflecting means includes a prism.

Claim 10

An optical power transistor according to claim 7 further including a layer of silicon oxide between said laser diode and said semiconductor diode for electrically insulating the two diodes, and for providing additional reflection of said infrared laser radiation back into said Fabry-Perot cavity in order to maintain the lasing action therein.

Claim 11

An integrated optical power transistor according to claim 8 wherein said first reflecting means includes an edge of the first section of said laser diode.

Claim 12

An integrated optical power transistor according to claim 8 wherein said reflecting means includes a prism having a first prism side coupled to said first section, a second prism side coupled to the top surface of said semiconductor diode, and a face opposite said first and second priam sides, said face making a forty-five degree angle with the top surface of said semiconductor diode.

Claim 13

An integrated optical power transistor comprising: a semiconductor diode having top and bottom surfaces and including a P-type region adjacent to said top surface, a first N-type region adjacent to said P-type region and forming a P-N junction therewith, portions of said first N-type region extending to said top surface through said P-type region and thereby isolating portions of said P-type region, a second N-type region between and adjacent to said first N-type region and said bottom surface, an anode electrode disposed on said bottom surface, a cathode electrode disposed on selected of the isolated portions of said P-type region, said first N-type region having an impurity concentration between 10 14 donor atoms/cm 3 and 10 16 donor atoms/cm 3 , said P-type region having an impurity concentration between 10 16 acceptor atoms/cm 3 and 10 21 acceptor atoms/cm 3 , said second N-type region having an impurity concentration between 10 16 donor atoms/cm 3 and 10 21 donor atoms/cm 3 ; a laser diode having first and second sections, said first section including a layer of gallium arsenide disposed on the top surface of said semiconductor diode and a layer of aluminum gallium arsenide disposed on said layer of gallium arsenide for creating a Fabry-Perot cavity parallel to the top surface of said semiconductor diode from which infrared laser radiation is emitted, reflecting means on each end of said first section angled at a forty-five degree angle for reflecting the infrared laser radiation emitted from said Fabry-Perot cavity onto the portions of said first N-type region extending to the top surface of said semiconductor diode, said second section including an electrode disposed on said layer of aluminum gallium arsenide for facilitating the flow of current through said laser diode.

Claim 14

An integrated optical power transistor comprising: a semiconductor diode having top and bottom surfaces and including a P-type region adjacent to said top surface, a first N-type region adjacent to said P-type region and forming a P-N junction therewith, portions of said first N-type region extending to said top surface through said P-type region and thereby isolating portions of said P-type region, a second N-type region between and adjacent to said first N-type region and said bottom surface, an anode electrode disposed on said bottom surface, a cathode electrode disposed on selected of the isolated portions of said P-type region, said first N-type region having an impurity concentration between 10 14 donor atoms/cm 3 and 10 16 donor atoms/cm 3 , said P-type region having an impurity concentration between 10 16 acceptor atoms/cm 3 and 10 21 acceptor atoms/cm 3 , said second N-type region having an impurity concentration between 10 16 donor atoms/cm 3 and 10 21 donor atoms/cm 3 ; a laser diode having first and second sections, said first section including a layer of gallium arsenide disposed on the top surface of said semiconductor diode and a layer of aluminum gallium arsenide disposed on said layer of gallium arsenide for creating a Fabry-Perot cavity parallel to the top surface of said semiconductor diode from which infrared laser radiation is emitted, reflecting means on each end of said first section angled at a forty-five degree angle for reflecting the infrared laser radiation emitted from said Fabry-Perot cavity onto the portions of said first N-type region extending to the top surface of said semiconductor diode, said second section including an electrode disposed on said layer of aluminum gallium arsenide for facilitating the flow of current through said laser diode.