Patent US4213030A successfully refreshed from Google Patents.
US4213030A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon-semiconductor-type thermal head
Assignee: Kyoto Ceramic Co Ltd
•
Filing: 1977-07-21
•
Granted: 1980-07-15
•
Expires: 1997-07-21
Abstract
Abstract A silicon-semiconductor type thermal head comprising a substrate of α-alumina ceramic of single crystalline sapphire a silicon layer of high electrical resistance formed on the upper surface of the substrate and exothermic dots of low electrical resistance silicon integrally formed on the high resistance silicon layer. The silicon semiconductor type thermal head is formed by forming a substrate of α-alumina ceramic of single crystalline and sapphire, forming a high resistance layer of silicon on the α-alumina ceramic, forming a layer of low resistance silicon on the high resistance layer of silicon and selectively etching the low and high resistance silicon layers to produce exothermic dots of low resistance silicon, separated from the substrate by high resistance silicon.
Inventors
- 👤 Takao Kawamura
- 👤 Kokichi Ishibitsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:59
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/315; B41J2/32; B41J2/335; B41J2/34
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
59 words
A silicon semiconductor type thermal head comprising: a substrate of α-alumina ceramic single crystalline sapphire; a silicon layer of high electrical resistance formed on the upper surface of said substrate; and a plurality of exothermic dots defined by a plurality of exposed areas of a silicon layer of low electrical resistance integrally formed on the high resistance silicon layer.
Claim 2
Dependent Claim
59 words
A silicon semiconductor type thermal head comprising: a substrate of α-alumina ceramic single crystalline sapphire; a silicon layer of high electrical resistance formed on the upper surface of said substrate; and a plurality of exothermic dots defined by a plurality of exposed areas of a silicon layer of low electrical resistance integrally formed on the high resistance silicon layer.
Claim 3
Dependent Claim
45 words
A silicon conductor type thermal head according to claim 1 further comprising a plurality of conductive paths formed on said low electrical resistance silicon layer in such a manner that said conductive paths define said exothermic dots and are electrically coupled to said exothermic dots.
Claim 4
Dependent Claim
55 words
A silicon semiconductor type thermal head according to claim 2 further comprising a plurality of integrally formed diodes located on said high electrical resistance silicon layer, each of said diodes comprising a P-N junction formed on said low electrical resistance silicon layer, and being electrically coupled at one end to one of said exothermic dots.
Claim 5
Dependent Claim
27 words
A silicon semiconductor type thermal head according to claim 1 further comprising a plurality of diodes electrically coupled at one end to one of said exothermic dots.
Claim 6
Dependent Claim
41 words
A silicon semiconductor type thermal head according to claim 2 further comprising an insulating film of SiO 2 formed on both said exothermal dots and said conductive paths, and a film of SiC formed over said film of SiO 2 .
Claim 7
Dependent Claim
43 words
A silicon conductor type thermal head according to claim 1 wherein said thermal head comprises a plurality of side-by-side electrodes with each said electrode having a plurality of conductive fingers, each of said conductive fingers exposing at least one of said exothermic dots.
Claim 8
Dependent Claim
79 words
A silicon semiconductor type thermal head comprising: a substrate of α-aluminia ceramic single crystalline sapphire; a silicon layer of high electrical resistance formed on the upper surface of said substrate; and a silicon layer of low electrical resistance formed on the upper surface of the high resistance silicon layer; and a coating formed over said silicon layer of low electrical resistance such that a plurality of exposed areas of said low electrical resistance silicon layer extends through said coating.
Claim 9
Dependent Claim
79 words
A silicon semiconductor type thermal head comprising: a substrate of α-aluminia ceramic single crystalline sapphire; a silicon layer of high electrical resistance formed on the upper surface of said substrate; and a silicon layer of low electrical resistance formed on the upper surface of the high resistance silicon layer; and a coating formed over said silicon layer of low electrical resistance such that a plurality of exposed areas of said low electrical resistance silicon layer extends through said coating.
Claim 10
Dependent Claim
24 words
A silicon semiconductor type thermal head according to claim 7 wherein said coating forms a conductive pathway on said low electrical resistance silicon layer.
Claim 11
Dependent Claim
44 words
A silicon semiconductor type thermal head according to claim 7 wherein said thermal head is comprises a plurality of side-by-side electrodes with each said electrode having a plurality of conductive fingers, each of said conductive fingers exposing at least one of said exothermic dots.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-15 | 1984-01-14 | 1984-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-15 | 1988-01-14 | 1988-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-15 | 1992-01-14 | 1992-07-15 | $7700.00 | Window Closed / Lapsed |