Patent US4210472A successfully refreshed from Google Patents.
US4210472A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing process of semiconductor devices
Assignee: Micronas Semiconductor Holding AG
•
Filing: 1978-11-16
•
Granted: 1980-07-01
•
Expires: 1998-11-16
Abstract
Abstract Process of manufacturing semiconductor devices by providing on the surface of a substrate of one conductivity at first only a covering with a doping agent of the other conductivity and then, after the building of mesas, the PN-junction is formed by diffusion in an oxidizing atmosphere whereby simultaneously a protecting SiO 2 layer is formed on the free surface of the mesa.
Inventors
- 👤 Hans Hoffmann
- 👤 Peter Krieger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10D; H10D8/00; H10D8/422; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/17; H10P32/171; H10W; H10W74/00; H10W74/01
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
71 words
A method of manufacturing a semiconductor device comprising the steps of: coating to one conductivity type by means of a doping agent the surface layer of a semiconductor substrate of the other conductivity type whereby a PN-junction is formed; forming a mesa structure from said substrate; and diffusing in said doping agent so as to fix the depth of the PN-junction within the semiconductor substrate while simultaneously passivating said mesa structure.
Claim 2
Independent Claim
71 words
A method of manufacturing a semiconductor device comprising the steps of: coating to one conductivity type by means of a doping agent the surface layer of a semiconductor substrate of the other conductivity type whereby a PN-junction is formed; forming a mesa structure from said substrate; and diffusing in said doping agent so as to fix the depth of the PN-junction within the semiconductor substrate while simultaneously passivating said mesa structure.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein passivating said mesa comprises forming an oxide layer thereon by thermal oxidation.
Claim 4
Dependent Claim
26 words
The method of claim 1 or 2 wherein said forming said mesa structure comprises etching said substrate through a patterned mask formed on said surface layer.
Claim 5
Dependent Claim
20 words
The method of claim 1 or 2 further including forming a contact on the surface layer of said mesa structure.
Claim 6
Dependent Claim
15 words
The method of claim 1 or 2 wherein said semiconductor substrate comprises a P-type conductivity.
Claim 7
Independent Claim
87 words
A method of manufacturing a semiconductor diode comprising the steps of: coating to one conductivity type by means of a doping agent the surface layer of a semiconductor substrate of the other conductivity type whereby a PN-junction is formed; etching said substrate to produce a mesa; and diffusing said doping agent into said mesa to fix the depth of the PN-junction therein while simultaneously forming an oxide layer on said mesa thereby preventing out-diffusion of said doping agent by carrying out said diffusing in an oxidizing atmosphere.
Claim 8
Independent Claim
87 words
A method of manufacturing a semiconductor diode comprising the steps of: coating to one conductivity type by means of a doping agent the surface layer of a semiconductor substrate of the other conductivity type whereby a PN-junction is formed; etching said substrate to produce a mesa; and diffusing said doping agent into said mesa to fix the depth of the PN-junction therein while simultaneously forming an oxide layer on said mesa thereby preventing out-diffusion of said doping agent by carrying out said diffusing in an oxidizing atmosphere.
Claim 9
Dependent Claim
13 words
The method of claim 6 wherein said doping agent comprises an N-type dopant.
Claim 10
Dependent Claim
22 words
The method of claim 6 or 7 wherein doping said surface layer comprises doping the entire surface layer with said doping agent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-01 | 1983-12-31 | 1984-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-01 | 1987-12-31 | 1988-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-01 | 1991-12-31 | 1992-07-01 | $7700.00 | Window Closed / Lapsed |