Patent US4208782A successfully refreshed from Google Patents.
US4208782A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of fabricating transducers employing flat bondable surfaces with buried contact areas
Assignee: Kulite Semiconductor Products Inc
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Filing: 1978-10-12
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Granted: 1980-06-24
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Expires: 1998-10-12
Abstract
Abstract A semiconductor pressure transducer includes a base member fabricated from n-type silicon. The base member has a central depression defining an active area and located on a bottom, surface; diffused in the top surface, is at least one contact area which is directed from the active region towards the periphery of said base member. A piezoresistive sensor is located on said top surface and in contact with said contact area within said active region. A layer of epitaxial material surrounds the active region and has an aperture on the surface which is in communication with the contact area outside said active region. The epitaxial layer is polished at a top surface and a housing is coupled to the region by means of a suitable bond. Alternate methods of fabricating the transducer are shown employing both polycrystalline and monocrystalline epitaxial layers.
Inventors
- 👤 Anthony D. Kurtz
- 👤 Joseph R. Mallon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:06
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00261; B81C1/00333; G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0051; G01L9/0052; G01L9/0054; H; H10; H10D; H10D48/00; H10D48/50; G01B; G01B2210/00; G01B2210/64; Y; Y10; Y10T; Y10T29/00; Y10T29/42; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49103
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
208 words
A method of fabricating a semiconductor transducer structure comprising the steps of: (a) forming a layer of silicon dioxide on a first surface of a wafer of semiconductor material of a given conductivity, (b) masking said layer and diffusing into said wafer a contact pattern directed from a peripheral location on said wafer towards the center thereof, (c) diffusing a sensor pattern of piezoresistive elements on said wafer relatively at said central region with said pattern in contact with said contact pattern, (d) growing a layer of epitaxial semiconductor material on said surface to cover said sensor pattern and contact pattern, (e) forming apertures in said epitaxial layer to contact said contact pattern, said apertures formed about an inner portion of said wafer surrounding said sensor pattern, with said apertures lying in a predetermined region about said sensor pattern, (f) polishing said epitaxial layer about said inner portion towards said central area excluding said predetermined region to form a smooth continuous surface about said sensor pattern, (g) bonding a glass housing to said polished smooth surface of said epitaxial layer whereby said aperture contact pattern is positioned about the outer edge of said housing with said sensor pattern positioned within the cross sectional area contained by said housing.
Claim 2
Independent Claim
208 words
A method of fabricating a semiconductor transducer structure comprising the steps of: (a) forming a layer of silicon dioxide on a first surface of a wafer of semiconductor material of a given conductivity, (b) masking said layer and diffusing into said wafer a contact pattern directed from a peripheral location on said wafer towards the center thereof, (c) diffusing a sensor pattern of piezoresistive elements on said wafer relatively at said central region with said pattern in contact with said contact pattern, (d) growing a layer of epitaxial semiconductor material on said surface to cover said sensor pattern and contact pattern, (e) forming apertures in said epitaxial layer to contact said contact pattern, said apertures formed about an inner portion of said wafer surrounding said sensor pattern, with said apertures lying in a predetermined region about said sensor pattern, (f) polishing said epitaxial layer about said inner portion towards said central area excluding said predetermined region to form a smooth continuous surface about said sensor pattern, (g) bonding a glass housing to said polished smooth surface of said epitaxial layer whereby said aperture contact pattern is positioned about the outer edge of said housing with said sensor pattern positioned within the cross sectional area contained by said housing.
Claim 3
Dependent Claim
40 words
The method according to claim 1 including the further step of: (a) forming a central depression on a surface of said wafer opposite to said first surface, said central depression encircling said sensor pattern to define an active diaphragm area.
Claim 4
Dependent Claim
33 words
The method according to claim 2 wherein said glass housing is an annular, tubular member with the top surface bonded to said polished surface and said annulus relatively congruent with said central depression.
Claim 5
Dependent Claim
31 words
The method according to claim 2 further including the step of forming a depression in said epitaxial layer about said sensor pattern with said depression relatively congruent to said central depression.
Claim 6
Dependent Claim
14 words
The method according to claim 1 wherein said epitaxial layer is polycrystalline in structure.
Claim 7
Independent Claim
205 words
A method of fabricating a semiconductor transducer, comprising the steps of: (a) forming a layer of silicon dioxide on a flat surface of a wafer of semiconductor material of a given conductivity, (b) masking said layer and diffusing into said wafer, a contact pattern directed from a peripheral location on said wafer towards a central region, (c) forming a layer of epitaxial semiconductor material over said surface and covering said contact pattern, (d) diffusing a sensor configuration in said epitaxial layer and positioned at said central region with said sensor configuration in contact with said contact pattern, (e) forming apertures in said epitaxial layer to contact said contact pattern, said apertures formed about an inner portion of said epitaxial layer surrounding said sensor configuration, with said apertures lying in a predetermined region about said sensor configuration, (f) polishing said epitaxial layer about said inner portion and towards said central region excluding said predetermined region, to form a smooth, continuous surface about said sensor configuration, (g) bonding a glass housing to said polished smooth surface of said epitaxial layer whereby said contact pattern is positioned about the outer edge of said housing with said sensor configuration positioned within the cross sectional area contained by said housing.
Claim 8
Independent Claim
205 words
A method of fabricating a semiconductor transducer, comprising the steps of: (a) forming a layer of silicon dioxide on a flat surface of a wafer of semiconductor material of a given conductivity, (b) masking said layer and diffusing into said wafer, a contact pattern directed from a peripheral location on said wafer towards a central region, (c) forming a layer of epitaxial semiconductor material over said surface and covering said contact pattern, (d) diffusing a sensor configuration in said epitaxial layer and positioned at said central region with said sensor configuration in contact with said contact pattern, (e) forming apertures in said epitaxial layer to contact said contact pattern, said apertures formed about an inner portion of said epitaxial layer surrounding said sensor configuration, with said apertures lying in a predetermined region about said sensor configuration, (f) polishing said epitaxial layer about said inner portion and towards said central region excluding said predetermined region, to form a smooth, continuous surface about said sensor configuration, (g) bonding a glass housing to said polished smooth surface of said epitaxial layer whereby said contact pattern is positioned about the outer edge of said housing with said sensor configuration positioned within the cross sectional area contained by said housing.
Claim 9
Dependent Claim
26 words
The method according to claim 6 wherein the step of bonding includes the formation of a diffusion bond between said epitaxial layer and said glass housing.
Claim 10
Dependent Claim
15 words
The method according to claim 6 wherein said epitaxial semiconductor material is monocrystalline in structure.
Claim 11
Dependent Claim
27 words
The method according to claim 6 further including the step of metallizing after forming said apertures to fill said apertures with a metal to form terminal areas.
Claim 12
Dependent Claim
26 words
The method according to claim 6 further including the step of forming a central depression in said wafer of semiconductor material to enclose said sensor configuration.
Claim 13
Dependent Claim
24 words
The method according to claim 10 wherein said glass housing is an annular housing with a central aperture relatively congruent to said central depression.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-06-24 | 1983-12-24 | 1984-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-06-24 | 1987-12-24 | 1988-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-06-24 | 1991-12-24 | 1992-06-24 | $7700.00 | Window Closed / Lapsed |