US4205333A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lateral transistor with multi-base contacts
Assignee: NTT Inc
•
Filing: 1979-03-15
•
Granted: 1980-05-27
•
Expires: 1999-03-15
Abstract
Abstract A semiconductor device in the nature of a bipolar transistor, which is formed on a low resistance substrate, comprises regions serving as emitter and collector separated by a gate region, the emitter and collector regions being separated from and encompassed by a surrounding region that may be maintained at a selected potential relative to the encompassed regions.
Inventors
- 👤 Yousuke Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:16
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10D62/134; H10D10/00; H10D10/60; H10D64/00; H10D64/20; H10D64/27; H10D64/281; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D84/406; H10D99/00; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/197
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
248 words
A semiconductor device comprising: a first semiconductor region of a first conductivity type formed of a semiconductor substrate and serving as a base region of a lateral bipolar transistor; second and third semiconductor regions of a second conductivity type formed in the upper surface of the first semiconductor region and serving as emitter and collector regions of the lateral bipolar transistor, respectively; a fourth semiconductor region of the first conductivity type formed in the upper surface of the first semiconductor region to extend between the second and third regions and having a lower resistance than the first semiconductor region; and first and second electrodes deposited on the second and third semiconductor regions, respectively to serve as emitter and collector electrodes of the lateral bipolar transistor, respectively; wherein there is provided a fifth semiconductor region of the first conductivity type formed in the upper surface of the first semiconductor region to encompass the second, third and fourth semiconductor regions and having a lower resistance than the first semiconductor region; wherein the first semiconductor region has a resistance less than 500 ohm-cm; wherein there are provided third and fourth electrodes are deposited on the fourth and fifth semiconductor regions, respectively, to establish a potential difference therebetween, each of the third and fourth electrodes serving as a base electrode of the lateral bipolar transistor; and wherein the area of the fourth semiconductor region is very small as compared with that of the fifth semiconductor region to produce a spreading resistance effect.
Claim 2
Dependent Claim
248 words
A semiconductor device comprising: a first semiconductor region of a first conductivity type formed of a semiconductor substrate and serving as a base region of a lateral bipolar transistor; second and third semiconductor regions of a second conductivity type formed in the upper surface of the first semiconductor region and serving as emitter and collector regions of the lateral bipolar transistor, respectively; a fourth semiconductor region of the first conductivity type formed in the upper surface of the first semiconductor region to extend between the second and third regions and having a lower resistance than the first semiconductor region; and first and second electrodes deposited on the second and third semiconductor regions, respectively to serve as emitter and collector electrodes of the lateral bipolar transistor, respectively; wherein there is provided a fifth semiconductor region of the first conductivity type formed in the upper surface of the first semiconductor region to encompass the second, third and fourth semiconductor regions and having a lower resistance than the first semiconductor region; wherein the first semiconductor region has a resistance less than 500 ohm-cm; wherein there are provided third and fourth electrodes are deposited on the fourth and fifth semiconductor regions, respectively, to establish a potential difference therebetween, each of the third and fourth electrodes serving as a base electrode of the lateral bipolar transistor; and wherein the area of the fourth semiconductor region is very small as compared with that of the fifth semiconductor region to produce a spreading resistance effect.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-27 | 1983-11-26 | 1984-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-27 | 1987-11-26 | 1988-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-27 | 1991-11-26 | 1992-05-27 | $7700.00 | Window Closed / Lapsed |