Dynamic read-write random access memory

Claim 2

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; and (c) potential deviation preventing means connected to said data lines for preventing the potential of said data lines from being deviated from said first reference potential in an opposite direction to that of said second reference potential to minimize loss of said stored content of any of said cells which are not being accessed.

Claim 3

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said corresponding data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; and (c) an MOS transistor connected between each of said data lines and terminals having said second reference potential; and (d) means for supplying the gates of said transistors with a potential deviation preventing voltage sufficient to prevent the potential of said data lines from being deviated from said first reference potential in an opposite direction to that of said second reference potential to minimize loss of said content of any of said cells which are not being accessed.

Claim 4

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said corresponding data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; and (c) an MOS transistor connected between each of said data lines and terminals having said second reference potential; and (d) means for supplying the gates of said transistors with a potential deviation preventing voltage sufficient to prevent the potential of said data lines from being deviated from said first reference potential in an opposite direction to that of said second reference potential to minimize loss of said content of any of said cells which are not being accessed.

Claim 5

The dynamic random access memory according to claim 2, wherein said MOS transistors are of the enhancement type; and said potential deviation preventing voltage is the sub-stantial threshold voltage of said MOS transistors.

Claim 6

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said corresponding data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; (c) potential deviation preventing enhancement-type MOS transistors connected between said data lines and power terminals having said second reference potential; (d) first and second enhancement-type MOS transistors having source and drains series coupled between said second and first reference potentials, the gate of said first transistor being coupled to said second reference potential and both the gate of said second transistor and the common source-drain junction of said first and second transistors being coupled to the gate of a corresponding one of said potential deviation preventing MOS transistors.

Claim 7

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said corresponding data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; (c) potential deviation preventing enhancement-type MOS transistors connected between said data lines and power terminals having said second reference potential; (d) first and second enhancement-type MOS transistors having source and drains series coupled between said second and first reference potentials, the gate of said first transistor being coupled to said second reference potential and both the gate of said second transistor and the common source-drain junction of said first and second transistors being coupled to the gate of a corresponding one of said potential deviation preventing MOS transistors.

Claim 8

The dynamic random access memory according to claim 4, which further comprises charge transistors connected to said corresponding data lines for precharging said data lines to a selected potential.

Claim 9

The dynamic random access memory according to claim 4, which further comprises sense amplifiers connected to said corresponding data lines, each sense amplifier including a corresponding one of said charge transistors.

Claim 10

The dynamic random access memory according to claim 4, wherein said memory cells each consists of one MOS tran-sistor and one capacitor.

Claim 11

The dynamic random access memory according to claim 4, wherein said second enhancement type MOS transistor has a larger conductance than said first enhancement type MOS transistor.

Claim 12

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said corresponding data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; (c) enhancement-type MOS transistors connected between said data lines and a terminal having said first re-ference potential; and (d) electric circuits connected to the gates of said MOS transistors to supply said gates with a signal having first and second potentials with said first potential rendering said MOS transistors conducting for charging of said data lines and said second potential rendering said MOS tran-sistors substantially nonconducting to prevent the potential of said data lines from being deviated from said first reference potential in an opposite direction to that of said second reference potential to minimize loss of said stored content of any of said cells which are not being accessed.

Claim 13

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said corresponding data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; (c) enhancement-type MOS transistors connected between said data lines and a terminal having said first re-ference potential; and (d) electric circuits connected to the gates of said MOS transistors to supply said gates with a signal having first and second potentials with said first potential rendering said MOS transistors conducting for charging of said data lines and said second potential rendering said MOS tran-sistors substantially nonconducting to prevent the potential of said data lines from being deviated from said first reference potential in an opposite direction to that of said second reference potential to minimize loss of said stored content of any of said cells which are not being accessed.

Claim 14

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to a corresponding one of said data lines to drive said one of said data lines toward one of first and second reference potentials denpending upon the stored content of said cell; (c) first enhancement-type MOS transistors connected between said data lines and a terminal having said second reference potential; (d) second enhancement-type MOS transistors each having a first terminal connected to said terminal having said second reference source potential, a second terminal connected to a gate terminal of said first enhancement-type MOS transistor and a gate terminal supplied with a timing signal; (e) third enhancement-type MOS transistors each having a first terminal connected to said second terminal of said second enhancement-type MOS transistor, and a gate terminal supplied with a signal produced by reversing the phase of said timing signal; and (f) fourth enhancement-type MOS transistors each having first and gate terminals connected to a second terminal of a corresponding third enhancement-type MOS transistor and having second terminals connected to a terminal having said first reference potential.

Claim 15

A dynamic read-write random access memory which comprises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to a corresponding one of said data lines to drive said one of said data lines toward one of first and second reference potentials denpending upon the stored content of said cell; (c) first enhancement-type MOS transistors connected between said data lines and a terminal having said second reference potential; (d) second enhancement-type MOS transistors each having a first terminal connected to said terminal having said second reference source potential, a second terminal connected to a gate terminal of said first enhancement-type MOS transistor and a gate terminal supplied with a timing signal; (e) third enhancement-type MOS transistors each having a first terminal connected to said second terminal of said second enhancement-type MOS transistor, and a gate terminal supplied with a signal produced by reversing the phase of said timing signal; and (f) fourth enhancement-type MOS transistors each having first and gate terminals connected to a second terminal of a corresponding third enhancement-type MOS transistor and having second terminals connected to a terminal having said first reference potential.

Claim 16

The dynamic random access memory according to claim 10, wherein said memory cells each consist of one MOS transistor and one capacitor.

Claim 17

The dynamic random access memory according to claim 10, which further comprises sense amplifiers connected to said data lines, each sense amplifier including one of said first enhancement-type MOS transistors for both precharging said data lines and for preventing the potential of said data lines from being deviated from said first reference potential in an opposite direction to that of said second reference potential.

Claim 18

A dynamic read-write random access memory which com-prises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; (c) potential deviation preventing transistors have source and drains connected between said data lines and terminals having said second reference potential; (d) first enhancement-type MOS transistors each having a first terminal connected to a terminal having said second reference potential, a gate terminal connected to a terminal having said second reference potential, and a third terminal connected to the gate terminal of a corresponding potential deviation preventing transistor, said third terminal having a potential lower in absolute value than said first and second reference potentials; and (e) second enhancement-type MOS transistors each having a first terminal and a gate terminal connected to said third terminal of a corresponding one of said first enhancement type MOS transistors and each having a third terminal connected to a terminal having said first reference potential.

Claim 19

A dynamic read-write random access memory which com-prises (a) a plurality of data lines; (b) a plurality of memory cells with each cell selectably connected to one of said data lines to drive said one of said data lines toward one of first and second reference potentials depending upon the stored content of said cell; (c) potential deviation preventing transistors have source and drains connected between said data lines and terminals having said second reference potential; (d) first enhancement-type MOS transistors each having a first terminal connected to a terminal having said second reference potential, a gate terminal connected to a terminal having said second reference potential, and a third terminal connected to the gate terminal of a corresponding potential deviation preventing transistor, said third terminal having a potential lower in absolute value than said first and second reference potentials; and (e) second enhancement-type MOS transistors each having a first terminal and a gate terminal connected to said third terminal of a corresponding one of said first enhancement type MOS transistors and each having a third terminal connected to a terminal having said first reference potential.