US3774176A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory having single transistor storage elements and a flip-flop circuit for the evaluation and regeneration of information
Assignee: Siemens AG
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Filing: 1972-09-11
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Granted: 1973-11-20
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Expires: 1992-09-11
Abstract
Abstract A dynamic semiconductor memory having a plurality of single transistor storage elements connected to a digit line and respective selection lines, an evaluation and regeneration circuit including a flip-flop having a pair of input/output points, each of the points connected to one of the digit lines, and means connecting the points including a controllable semiconductor switch operable to place the points at equal potentials prior to reading from a selected storage element.
Inventors
- 👤 K Stein
- 👤 A Sihling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:17
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C11/4099; G11C11/403; G11C11/404; G11C11/4091; H; H03; H03K; H03K3/00; H03K3/02; H03K3/353; H03K3/356; H03K3/356086; H03K3/356095; H03K5/00; H03K5/01; H03K5/02; H03K5/023
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
95 words
A dynamic semiconductor memory comprising: a plurality of transistor storage elements, each of said elements comprising a transistor having a control input; a selection device comprising a plurality of selection lines connected to respective ones of said control inputs and a digit line connected to each of said transistor storage elements; an evaluation and regeneration circuit including a flip-flop circuit having a pair of input points one of which is connected to said digit line; and at least one controllable semiconductor switch connected between said points operable to place said points at the same potential.
Claim 2
Dependent Claim
95 words
A dynamic semiconductor memory comprising: a plurality of transistor storage elements, each of said elements comprising a transistor having a control input; a selection device comprising a plurality of selection lines connected to respective ones of said control inputs and a digit line connected to each of said transistor storage elements; an evaluation and regeneration circuit including a flip-flop circuit having a pair of input points one of which is connected to said digit line; and at least one controllable semiconductor switch connected between said points operable to place said points at the same potential.
Claim 3
Dependent Claim
13 words
The invention according to claim 1, wherein said semiconductor switch comprises a transistor.
Claim 4
Dependent Claim
14 words
The invention according to claim 2, wherein said transistor is a field effect transistor.
Claim 5
Dependent Claim
33 words
The invention according to claim 1, comprising two semiconductor switches connected in series between said points, wherein a terminal to which an electrical potential can be applied is located between the two switches.
Claim 6
Dependent Claim
23 words
The invention according to claim 1, wherein said storage elements, said evaluation and regeneration circuit, said semiconductor switch are constructed as integrated circuits.
Claim 7
Dependent Claim
59 words
The invention according to claim 1, comprising a second plurality of storage elements, each including a transistor having a control input, a second selection device having a plurality of selection lines connected to respective control inputs and a second digit line connected to each of said storage elements of said second plurality and to the other of said points.
Claim 8
Dependent Claim
32 words
The invention according to claim 6, wherein the same number of storage elements is connected to each of said digit lines and both digit lines and said storage elements are designed identical.
Claim 9
Dependent Claim
38 words
The invention according to claim 6, comprising a pair of dummy storage elements connected to respective digit lines, each having a control input connected to a selection line of the selection device associated with the other digit line.
Claim 10
Dependent Claim
31 words
The invention according to claim 8, comprising means in each of said selection devices for shifting the selection of said dummy elements with respect to the selection of said storage elements.
Claim 11
Dependent Claim
26 words
The invention according to claim 8, comprising a plurality of said evaluation and regeneration circuits and respective connected digit lines are constructed as a single unit.
Claim 12
Dependent Claim
43 words
The invention according to claim 1, comprising means for operating said controllable semiconductor switch to connect said points and bring said points to the same potential prior to reading and to interrupt the connection immediately prior to and maintaining the interruption during reading.
Claim 13
Dependent Claim
41 words
The invention according to claim 11, wherein said flip-flop circuit has a capacitance, comprising means for blocking said flip-flop and then unblocking said flip-flop after charging the capacitance with a charge representative of the information read from a selected storage element.
References Cited (Backward Citations)
US3651492A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-19 | 1977-05-21 | 1977-11-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-19 | 1981-05-21 | 1981-11-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-19 | 1985-05-21 | 1985-11-20 | $7700.00 | Window Closed / Lapsed |