US4202006A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device
Assignee: RCA Corp
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Filing: 1979-05-21
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Granted: 1980-05-06
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Expires: 1999-05-21
Abstract
Abstract A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.
Inventors
- 👤 Heshmat Khajezadeh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:17
CPC Classifications
H; H10; H10W; H10W15/00; H10D; H10D84/00; H10D84/60; H10D84/65; H10D84/658; H10P; H10P32/00; H10P32/10; H10P32/15; H10W15/01
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
222 words
A semiconductor integrated circuit device comprising: a body of semiconductive material including a substrate of one type conductivity and an epitaxial layer of opposite type conductivity with an interface therebetween, a first localized region of opposite type conductivity in said substrate adjacent to said interface and containing opposite type conductivity modifiers consisting essentially of a first chemical element, a second localized region of opposite type conductivity in said substrate adjacent to said interface and spaced from said region of opposite type conductivity, said second region containing opposite type conductivity modifiers consisting essentially of a second different chemical element, said first and second chemical elements being characterized by substantially equal diffusion coefficients in said semiconductive material but substantially different vapor pressures at the growth temperature of said epitaxial layer, said second chemical element having a relatively high vapor pressure whereby that portion of said epitaxial layer which is adjacent to said second region contains an autodoped number of atoms of said second chemical element which is greater than the autodoped number of atoms of said first chemical element in that portion of said epitaxial layer which is adjacent to said first localized portion, said semiconductor material being silicon, said one type being P type, said opposite type being N type, said first chemical element being antimony, and said second chemical element being arsenic.
Claim 2
Dependent Claim
222 words
A semiconductor integrated circuit device comprising: a body of semiconductive material including a substrate of one type conductivity and an epitaxial layer of opposite type conductivity with an interface therebetween, a first localized region of opposite type conductivity in said substrate adjacent to said interface and containing opposite type conductivity modifiers consisting essentially of a first chemical element, a second localized region of opposite type conductivity in said substrate adjacent to said interface and spaced from said region of opposite type conductivity, said second region containing opposite type conductivity modifiers consisting essentially of a second different chemical element, said first and second chemical elements being characterized by substantially equal diffusion coefficients in said semiconductive material but substantially different vapor pressures at the growth temperature of said epitaxial layer, said second chemical element having a relatively high vapor pressure whereby that portion of said epitaxial layer which is adjacent to said second region contains an autodoped number of atoms of said second chemical element which is greater than the autodoped number of atoms of said first chemical element in that portion of said epitaxial layer which is adjacent to said first localized portion, said semiconductor material being silicon, said one type being P type, said opposite type being N type, said first chemical element being antimony, and said second chemical element being arsenic.
Claim 3
Dependent Claim
67 words
A semiconductor integrated circuit device as defined in claim 1 further comprising means in that portion of said epitaxial layer which is adjacent to said first localized region defining a circuit element having predetermined characteristics, and means in that portion of said epitaxial layer which is adjacent to said second localized region defining a circuit element having characteristics different from those of the first mentioned circuit element.
Claim 4
Dependent Claim
104 words
A semiconductor integrated circuit device as defined in claim 2 wherein said epitaxial layer has a surface spaced from said interface by a predetermined distance, said means in that portion of said epitaxial layer which is adjacent to said first localized region comprising a first surface adjacent region of said one type conductivity and a first surface adjacent region of said opposite type conductivity therewithin, said means in that portion of said epitaxial layer which is adjacent said second localized region comprising a second surface adjacent region of said one type conductivity and a second surface adjaceent region of said opposite type conductivity therewithin.
Claim 5
Dependent Claim
72 words
A semiconductor integrated circuit device as defined in claim 3 wherein said means in that portion of said epitaxial layer which is adjacent to said second localized region further comprises a plurality of surface adjacent regions of said opposite type conductivity within said second surface adjacent region of said one type conductivity and a third surface adjacent region of said one conductivity spaced from said second surface-adjacent region of one type conductivity.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-06 | 1983-11-05 | 1984-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-06 | 1987-11-05 | 1988-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-06 | 1991-11-05 | 1992-05-06 | $7700.00 | Window Closed / Lapsed |