US3961340A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit having bipolar transistors and method of manufacturing said circuit
Assignee: US Philips Corp
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Filing: 1974-12-20
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Granted: 1976-06-01
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Expires: 1994-12-20
Abstract
Abstract Method of producing integrated circuit including bipolar transistors, comprising the steps of forming collector zone of a first transistor at least partly by diffusing an impurity from a substrate part that is, before the growth of a first epitaxial layer on the substrate, doped at least locally with the impurity, forming the first epitaxial layer, and forming the collector zone of a second transistor by diffusing an impurity in the first epitaxial layer prior to growing a second epitaxial layer. Also, an integrated circuit produced by this method.
Inventors
- 👤 Jean Encinas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:05
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/641; H10D84/642; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/151; Y10S257/00; Y10S257/918
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
212 words
A semiconductor device containing at least two bipolar transistors of the same polarity and comprising a semiconductor body, said body comprising a. a semiconductor substrate comprising at least a surface portion of a first conductivity type; b. first and second epitaxial layers of said first conductivity type successively disposed on said substrate, said first layer being located between said substrate and said second layer; and c. said bipolar transistors individually comprising emitter, base, and collector zones, said collector zones being of a second opposite conductivity type, at least a part of said second conductivity type collector zone of a first one of said transistors being disposed at said surface portion and extending along a first interface between said substrate and said first epitaxial layer, at least a part of said collector zone of a second one of said transistors extending along a second interface located between said first and second layers and being at least partly located above said first transistor collector zone, said collector of said first transistor at least partially defining a base region that is located in said first and second epitaxial layers and that has a thickness exceeding the base region of said second transistor, said second transistor base region being located only in said second epitaxial layer.
Claim 2
Dependent Claim
212 words
A semiconductor device containing at least two bipolar transistors of the same polarity and comprising a semiconductor body, said body comprising a. a semiconductor substrate comprising at least a surface portion of a first conductivity type; b. first and second epitaxial layers of said first conductivity type successively disposed on said substrate, said first layer being located between said substrate and said second layer; and c. said bipolar transistors individually comprising emitter, base, and collector zones, said collector zones being of a second opposite conductivity type, at least a part of said second conductivity type collector zone of a first one of said transistors being disposed at said surface portion and extending along a first interface between said substrate and said first epitaxial layer, at least a part of said collector zone of a second one of said transistors extending along a second interface located between said first and second layers and being at least partly located above said first transistor collector zone, said collector of said first transistor at least partially defining a base region that is located in said first and second epitaxial layers and that has a thickness exceeding the base region of said second transistor, said second transistor base region being located only in said second epitaxial layer.
Claim 3
Dependent Claim
23 words
A semiconductor device as recited in claim 1, wherein the thickness of said first epitaxial layer exceeds that of said second epitaxial layer.
Claim 4
Dependent Claim
18 words
A semiconductor device as recited in claim 1, wherein said substrate is completely of said first conductivity type.
Claim 5
Dependent Claim
19 words
A semiconductor device as recited in claim 1, wherein the impurity concentrations of said epitaxial layers are substantially equal.
Claim 6
Dependent Claim
66 words
A semiconductor device as recited in claim 1, wherein said part of said first transistor collector zone comprises the bottom portion of said collector zone and said collector zone of said first transistor further comprises a collector wall portion which surrounds said base zone of said first transistor and extends from said bottom portion through said epitaxial layers up to the surface of said semiconductor body.
Claim 7
Dependent Claim
25 words
A semiconductor device as recited in claim 1, whereby said body further comprises at least a third transistor complementary to said first and second transistors.
Claim 8
Dependent Claim
24 words
A semiconductor device as recited in claim 6, wherein said third transistor comprises a collector zone formed by respective portions of said epitaxial layers.
Claim 9
Dependent Claim
54 words
A semiconductor device as recited in claim 6, wherein said body further comprises a cup-shaped isolation zone of said first conductivity type and said third transistor comprises an island-shaped part of said epitaxial layers, said island-shaped part being defined by and separated from surrounding part of said semiconductor body by said cup-shaped isolation zone.
Claim 10
Dependent Claim
32 words
A semiconductor device as recited in claim 6, wherein said first and second transistors are of the n, p, n type and said third transistor is of the p, n, p type.
Claim 11
Dependent Claim
14 words
A semiconductor device as recited in claim 1, wherein said semiconductor body comprises silicon.
Claim 12
Dependent Claim
28 words
A semiconductor device as recited in claim 1, wherein said epitaxial layers are of p-type conductivity and individually have a resistivity which lies between 0.5 and 5 ohm-cm.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-06-01 | 1979-12-01 | 1980-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-06-01 | 1983-12-01 | 1984-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-06-01 | 1987-12-01 | 1988-06-01 | $7700.00 | Window Closed / Lapsed |