US4200621A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sequential purification and crystal growth
Assignee: Motorola Solutions Inc
•
Filing: 1978-07-18
•
Granted: 1980-04-29
•
Expires: 1998-07-18
Abstract
Abstract A combined method for purifying silicon and growing single crystals. A multiple step process is disclosed by which metallurgical grade silicon is purified and converted into a high quality monocrystalline silicon ingot. Each of the steps in the process is designed to remove specific impurities and thus improve the electrical quality of the silicon material. First, the insoluble slag and high segregation coefficient impurities are removed. Soluble impurities are then removed by a reactive gas step, and by a liquid-liquid extraction step using reactive metallic oxides or an oxide solvent. The remaining impurities are removed by segregation during freezing by pulling an ingot from a portion of the molten metallurgical grade silicon. The ingot so formed is then used to charge a second crystal puller. One or more of the previous purifying steps can then be repeated for the charge of the second crystal puller and an ingot of improved purity can be pulled from the melt of the second puller. In like manner, third and successive reiterations of the process can be used to obtain silicon of the desired purity and crystal quality.
Inventors
- 👤 H. Ming Liaw
- 👤 Charles J. Varker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:15
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C01; C01B; C01B33/00; C01B33/02; C01B33/037; C30B15/00
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
167 words
A process for the sequential purification and crystal growth of silicon crystals from impure silicon which comprises the steps of: melting said impure silicon in a crucible to form a melt; removing insoluble impurities from said melt by rotating said crucible and said melt and directing a gas flow onto a wall of said crucible, said rotating and said gas flow causing said insoluble impurities to coalesce on said melt, inserting a seed through said insoluble impurities to contact said melt, freezing a portion of said melt to said seed to trap said insoluble impurities, and withdrawing said seed, frozen melt and insoluble impurities; reacting a gas with said melt to remove soluble impurities from said melt; adding an oxide-slag forming compound to said melt to further remove soluble impurities; inserting a seed crystal into said melt and pulling an ingot from a portion of said melt; remelting said ingot to form a second melt; inserting a seed into said second melt and pulling a crystal therefrom.
Claim 2
Dependent Claim
167 words
A process for the sequential purification and crystal growth of silicon crystals from impure silicon which comprises the steps of: melting said impure silicon in a crucible to form a melt; removing insoluble impurities from said melt by rotating said crucible and said melt and directing a gas flow onto a wall of said crucible, said rotating and said gas flow causing said insoluble impurities to coalesce on said melt, inserting a seed through said insoluble impurities to contact said melt, freezing a portion of said melt to said seed to trap said insoluble impurities, and withdrawing said seed, frozen melt and insoluble impurities; reacting a gas with said melt to remove soluble impurities from said melt; adding an oxide-slag forming compound to said melt to further remove soluble impurities; inserting a seed crystal into said melt and pulling an ingot from a portion of said melt; remelting said ingot to form a second melt; inserting a seed into said second melt and pulling a crystal therefrom.
Claim 3
Dependent Claim
29 words
The process of claim 1 wherein said gas comprises a gas or a sequence of gases selected from the group consisting of wet hydrogen, chlorine, oxygen, and hydrogen chloride.
Claim 4
Dependent Claim
31 words
The process of claim 1 wherein said oxide-slag forming compound comprises a compound selected from the group consisting of calcium carbonate, barium oxide and magnesium oxide taken alone or mixtures thereof.
Claim 5
Dependent Claim
21 words
The process of claim 1 further comprising the reacting of said second melt with reactive gas to further remove soluble impurities.
Claim 6
Dependent Claim
27 words
The process of claim 4 further comprising: melting said crystal to form a third melt; adding a dopant to said third melt; and pulling a crystal therefrom.
Claim 7
Independent Claim
101 words
A method for removing insoluble slag from the surface of a silicon melt contained in a crucible which comprises the steps of: rotating said crucible and said melt; directing a flow of gas onto a wall of said crucible; adjusting said rotating and said flow to cause said insoluble slag to coalesce at a location on said surface; inserting a seed crystal through said coalesced insoluble slag to contact said melt; cooling said melt to cause a portion of said melt to freeze to said seed, trapping said insoluble slag; and withdrawing said seed, said frozen melt and said insoluble slag.
Claim 8
Independent Claim
101 words
A method for removing insoluble slag from the surface of a silicon melt contained in a crucible which comprises the steps of: rotating said crucible and said melt; directing a flow of gas onto a wall of said crucible; adjusting said rotating and said flow to cause said insoluble slag to coalesce at a location on said surface; inserting a seed crystal through said coalesced insoluble slag to contact said melt; cooling said melt to cause a portion of said melt to freeze to said seed, trapping said insoluble slag; and withdrawing said seed, said frozen melt and said insoluble slag.
Claim 9
Dependent Claim
106 words
A process for sequential purification and silicon crystal growth from an impure silicon charge which comprises the steps of: heating said impure silicon charge in a crucible to form a melt; manipulating insoluble impurities floating on said melt to coalesce said impurities; freezing a portion of said melt to trap said impurities; removing said frozen portion and said trapped impurities; removing soluble impurities dissolved in said melt; pulling a first ingot from a portion of said melt; charging a second crucible with said first ingot; heating said first ingot to form a second melt in said second crucible; and pulling a crystal from said second melt.
Claim 10
Dependent Claim
106 words
A process for sequential purification and silicon crystal growth from an impure silicon charge which comprises the steps of: heating said impure silicon charge in a crucible to form a melt; manipulating insoluble impurities floating on said melt to coalesce said impurities; freezing a portion of said melt to trap said impurities; removing said frozen portion and said trapped impurities; removing soluble impurities dissolved in said melt; pulling a first ingot from a portion of said melt; charging a second crucible with said first ingot; heating said first ingot to form a second melt in said second crucible; and pulling a crystal from said second melt.
Claim 11
Dependent Claim
14 words
The process of claim 7 wherein said impure silicon charge comprises metallurgical grade silicon.
Claim 12
Dependent Claim
21 words
The process of claim 8 wherein said step of removing soluble impurities comprises adding an oxide-slag forming compound to said melt.
Claim 13
Dependent Claim
11 words
The process of claim 9 wherein said compound comprises calcium carbonate.
Claim 14
Dependent Claim
20 words
The process of claim 7 further comprising the adding of dopant materials to said second melt to dope said crystal.
Claim 15
Independent Claim
158 words
A method for purifying metallurgical grade silicon which comprises: melting said metallurgical grade silicon to form a first melt, said first melt containing insoluble and soluble impurities present in said metallurgical grade silicon; manipulating insoluble impurities floating on said melt to coalesce said impurities; freezing a portion of said melt to trap said impurities; removing said frozen portion and said trapped impurities; adding oxide-slag forming compounds to said first melt to remove soluble impurities; pulling a first ingot from a portion of said first melt; heating said first ingot to form a second melt, said second melt having less impurities than said first melt; reacting gas with said second melt to remove soluble impurities therefrom; pulling a second ingot from a portion of said second melt; heating said second ingot to form a third melt; pulling a third ingot from said third melt, said third ingot being substantially free of said impurities present in said metallurgical grade silicon.
Claim 16
Independent Claim
158 words
A method for purifying metallurgical grade silicon which comprises: melting said metallurgical grade silicon to form a first melt, said first melt containing insoluble and soluble impurities present in said metallurgical grade silicon; manipulating insoluble impurities floating on said melt to coalesce said impurities; freezing a portion of said melt to trap said impurities; removing said frozen portion and said trapped impurities; adding oxide-slag forming compounds to said first melt to remove soluble impurities; pulling a first ingot from a portion of said first melt; heating said first ingot to form a second melt, said second melt having less impurities than said first melt; reacting gas with said second melt to remove soluble impurities therefrom; pulling a second ingot from a portion of said second melt; heating said second ingot to form a third melt; pulling a third ingot from said third melt, said third ingot being substantially free of said impurities present in said metallurgical grade silicon.
Claim 17
Dependent Claim
22 words
The method of claim 12 further comprising the step of adding dopant material to said third melt to dope said third ingot.
Claim 18
Dependent Claim
21 words
The method of claim 12 further comprising the step of reacting gas with said first melt to remove soluble impurities therefrom.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-29 | 1983-10-29 | 1984-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-29 | 1987-10-29 | 1988-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-29 | 1991-10-29 | 1992-04-29 | $7700.00 | Window Closed / Lapsed |