Silicon solar cells with low-cost substrates

Claim 2

A low-cost, multigrained, epitaxial n-on-p-on-p substrate planar diode comprising p-and-n-type epitaxial layers grown on a passive p-type, multigrained, silicon substrate, said layers duplicating the underlying substrate grain secondary structure, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from said silicon; and c. pulling refined metallurgical silicon boules from a melt of the thus-refined silicon on a rotating silicon seed rod, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 3

The planar diode product of claim 1 in which said liquid metal solvent is aluminum or an aluminum alloy and said seed rod is slowly moved while maintaining an interface between the rod with said boule being grown thereon and the molten silicon from which said boules are pulled.

Claim 4

The product of claim 2 in which said removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 5

The product of claim 3 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 6

The product of claim 4 in which said slag is of high purity, the concentration of each impurity in the slag reducible by molten silica at the silicon platelet-silica slag contacting temperature being less than about 10 ppm.

Claim 7

The product of claim 1 and including electrical contacts affixed to said n-type layer and to said substrate, said product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 8

The product of claim 4 and including electrical contacts affixed to said n-type layer and to said substrate, said product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 9

A low-cost, multigrained epitaxial n-on-p-on-p substrate planar diode comprising p-and-n-type epitaxial layers grown on a passive p-type multigrained, silicon substrate, said layers duplicating the underlying substrate grain boundary structure, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from the silicon platelets; and c. removing the silicon-slag melt from said melting zone in a unidirectional manner so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by the silicon as it solidifies, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 10

A low-cost, multigrained epitaxial n-on-p-on-p substrate planar diode comprising p-and-n-type epitaxial layers grown on a passive p-type multigrained, silicon substrate, said layers duplicating the underlying substrate grain boundary structure, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from the silicon platelets; and c. removing the silicon-slag melt from said melting zone in a unidirectional manner so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by the silicon as it solidifies, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 11

The product of claim 8 in which said liquid metal solvent is aluminum or an aluminum alloy.

Claim 12

The product of claim 9 in which the removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 13

The product of claim 10 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 14

The product of claim 11 in which said slag is of high purity, the concentration of each impurity in the slag reducible by molten silica at the silicon platelet-silica slag contacting temperature being less than about 10 ppm.

Claim 15

The product of claim 8 and including electrical contacts affixed to said n-type layer and to said substrate, said product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 16

The product of claim 11 and incouding electrical contacts affixed to said n-type layer and to said substrate, said product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 17

The product of claim 8 and including (a) melting said directionally solidified refined metallurgical silicon and (b) pulling refined metallurgical silicon boules from the melt of said directionally solidified silicon on a rotating silicon seed rod.

Claim 18

The product of claim 15 in which said liquid metal solvent is aluminum or an aluminum alloy.

Claim 19

The product of claim 16 in which the removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 20

The product of claim 17 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 21

The product of claim 18 and including electrical contacts affixed to said n-type layer and to said substrate, said product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 22

The product of claim 15 and including electrical contacts affixed to said n-type layer and to said substrate, said product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 23

A low-cost, single crystal, epitaxial n-on-p-on-p substrate planar diode comprising p-and-n-type epitaxial layers grown on a passive, p-type, single crystal silicon substrate, said layers duplicating the underlying substrate grain structure, said silicon substrate having been produced by the process comprising a. removing silicon platelets from a solution of metallurgical grade silicon on a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from said silicon; c. removing the silicon-slag melt from said melting zone so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by said silicon; d. re-melting the directionally solidified refined metallurgical silicon after the separation thereof from said region of solidified melt, and removing the resulting silicon melt from the melting zone so as to directionally solidify said silicon a second time, said directional solidification resulting in the obtaining of a solidified, refined metallurgical silicon and a region of solidified melt having a high concentratic of the remaining impurities; e. melting said directionally solidified refined metallurgical silicon of enhanced purity; and f. pulling silicon boules from said melt on a rotating seed rod, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 24

A low-cost, single crystal, epitaxial n-on-p-on-p substrate planar diode comprising p-and-n-type epitaxial layers grown on a passive, p-type, single crystal silicon substrate, said layers duplicating the underlying substrate grain structure, said silicon substrate having been produced by the process comprising a. removing silicon platelets from a solution of metallurgical grade silicon on a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from said silicon; c. removing the silicon-slag melt from said melting zone so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by said silicon; d. re-melting the directionally solidified refined metallurgical silicon after the separation thereof from said region of solidified melt, and removing the resulting silicon melt from the melting zone so as to directionally solidify said silicon a second time, said directional solidification resulting in the obtaining of a solidified, refined metallurgical silicon and a region of solidified melt having a high concentratic of the remaining impurities; e. melting said directionally solidified refined metallurgical silicon of enhanced purity; and f. pulling silicon boules from said melt on a rotating seed rod, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 25

The product of claim 21 in which said liquid metal solvent is aluminum or an aluminum alloy.

Claim 26

The product of claim 22 in which the removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 27

The product of claim 23 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 28

The product of claim 24 and including electrical contacts affixed to said n-type layer and to said substrate, said product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 29

The product of claim 21 and including electrical contacts affixed to said substrate, the product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 30

A low-cost, multigrained, epitaxial n-on-p-on-p substrate solar cell comprising p-and-n-type epitaxial layers grown on a passive p-type, multigrained silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a multigrained, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 0.5 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 0.5 ppm of chromium, about 0.5 ppm of calcium and about 0.5 ppm of magnesium.

Claim 31

A low-cost, multigrained, epitaxial n-on-p-on-p substrate solar cell comprising p-and-n-type epitaxial layers grown on a passive p-type, multigrained silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a multigrained, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 0.5 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 0.5 ppm of chromium, about 0.5 ppm of calcium and about 0.5 ppm of magnesium.

Claim 32

A low-cost, multigrained epitaxial n-on-p-on-p substrate solar cell comprising p-and n-type epitaxial layers grown on a passive p-type, multigrained silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a multigrained, directionally solidified refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 2 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 1 ppm of chromium, about 1 ppm of calcium, and about 1 ppm of magnesium.

Claim 33

A low-cost, multigrained epitaxial n-on-p-on-p substrate solar cell comprising p-and n-type epitaxial layers grown on a passive p-type, multigrained silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a multigrained, directionally solidified refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 2 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 1 ppm of chromium, about 1 ppm of calcium, and about 1 ppm of magnesium.

Claim 34

A low-cost, multigrained, epitaxial n-on-p-on-p substrate solar cell comprising p-and n-type epitaxial layers grown on a passive p-type, multigrained silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a multigrained, pulled, directionally solidified, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.03 ppm of titanium, about 1.5 ppm of boron, about 0.2 ppm of phosphorus, about 0.02 ppm of chromium, about 0.7 ppm of calcium, about 0.05 ppm of magnesium.

Claim 35

A low-cost, multigrained, epitaxial n-on-p-on-p substrate solar cell comprising p-and n-type epitaxial layers grown on a passive p-type, multigrained silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a multigrained, pulled, directionally solidified, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.03 ppm of titanium, about 1.5 ppm of boron, about 0.2 ppm of phosphorus, about 0.02 ppm of chromium, about 0.7 ppm of calcium, about 0.05 ppm of magnesium.

Claim 36

A low-cost, single crystal, epitaxial n-on-p-on-p substrate solar cell comprising p-and-n-type epitaxial layers grown on a passive, p-type, single crystal silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a single crystal, pulled, directionally solidified, refined metallurgical silicon having a resistivity of from about 0.05 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.02 ppm of titanium, about 1.5 ppm of boron, about 0.15 ppm of phosphorus, about 0.01 ppm of chromium, about 0.7 ppm of calcium, about 0.17 ppm of magnesium.

Claim 37

A low-cost, single crystal, epitaxial n-on-p-on-p substrate solar cell comprising p-and-n-type epitaxial layers grown on a passive, p-type, single crystal silicon substrate, with electrical contacts affixed to said n-type layer and to said substrate, said substrate comprising a single crystal, pulled, directionally solidified, refined metallurgical silicon having a resistivity of from about 0.05 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.02 ppm of titanium, about 1.5 ppm of boron, about 0.15 ppm of phosphorus, about 0.01 ppm of chromium, about 0.7 ppm of calcium, about 0.17 ppm of magnesium.

Claim 38

A low-cost, planar diode having desirable solar cell applications, comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from said silicon; and c. pulling refined metallurgical silicon boules from a melt of the thus-refined silicon on a rotating silicon seed rod, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 39

A low-cost, planar diode having desirable solar cell applications, comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from said silicon; and c. pulling refined metallurgical silicon boules from a melt of the thus-refined silicon on a rotating silicon seed rod, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 40

The product of claim 31 in which said liquid metal solvent is aluminum or an aluminum alloy.

Claim 41

The product of claim 32 in which the removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 42

The product of claim 33 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 43

The product of claim 34 and including electrical contacts affixed to the sides of said substrate, said product thereby constituting a solar cell, said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 44

The product of claim 31 and including electrical contacts affixed to the sides of said substrate, said product thereby constituting a solar cell, said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 45

A low-cost, planar diode having desirable solar cell applications, comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of said metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from the silicon platelets; and c. removing the silicon-slag melt from said melting zone in a unidirectional manner so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by the refined metallurgical silicon as it solidifies, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 46

A low-cost, planar diode having desirable solar cell applications, comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of said metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from the silicon platelets; and c. removing the silicon-slag melt from said melting zone in a unidirectional manner so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by the refined metallurgical silicon as it solidifies, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 47

The product of claim 37 in which said liquid metal solvent is aluminum or an aluminum alloy.

Claim 48

The product of claim 38 in which the removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 49

The product of claim 39 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 50

The product of claim 40 and including electrical contacts affixed to the sides of said substrate, the product thereby constituting a solar cell, said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 51

The product of claim 37 and including electrical contacts affixed to the sides of said substrate, said product thereby constituting a solar cell, said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 52

The product of claim 37 and including (a) melting said directionally solidified refined metallurgical silicon and (b) pulling refined metallurgical silicon boules from the melt of said directionally solidified silicon on a rotating silicon rod.

Claim 53

The product of claim 43 in which said liquid metal solvent is aluminum or an aluminum alloy.

Claim 54

The product of claim 44 in which the removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 55

The product of claim 45 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 56

The product of claim 46 and including electrical contacts affixed to the sides of said substrate.

Claim 57

The product of claim 43 and including electrical contacts affixed to the sides of said substrate, the product thereby constituting a solar cell, said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 58

A low-cost, single crystal planar diode having desirable solar cell applications comprising a p-type single crystal silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from said silicon; c. removing the silicon-slag melt from said melting zone so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by said silicon; d. re-melting the directionally solidified refined metallurgical silicon after the separation thereof from said region of solidified melt, and removing the resulting silicon melt from the melting zone so as to directionally solidify said silicon a second time, said directional solidification resulting in the obtaining of a solidified, refined metallurgical silicon and a region of solidified melt having a high concentration of the remaining impurities; e. melting said directionally solidified refined metallurgical silicon of enhanced purity; and f. pulling silicon boules from said melt on a rotating seed rod, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 59

A low-cost, single crystal planar diode having desirable solar cell applications comprising a p-type single crystal silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, said silicon substrate having been produced by the process comprising: a. removing silicon platelets from a solution of metallurgical grade silicon in a liquid metal solvent, thereby recovering partially purified, essentially iron-free silicon platelets with adherent impurities derived from said metal solvent; b. melting said partially purified silicon platelets in contact with acid silica slag in a melting zone, the resulting slag oxidation removing residual and adherent impurities from said silicon; c. removing the silicon-slag melt from said melting zone so as to directionally solidify said silicon, said directional solidification resulting in the obtaining of solidified refined metallurgical silicon and a region of solidified melt having a high concentration of impurities rejected by said silicon; d. re-melting the directionally solidified refined metallurgical silicon after the separation thereof from said region of solidified melt, and removing the resulting silicon melt from the melting zone so as to directionally solidify said silicon a second time, said directional solidification resulting in the obtaining of a solidified, refined metallurgical silicon and a region of solidified melt having a high concentration of the remaining impurities; e. melting said directionally solidified refined metallurgical silicon of enhanced purity; and f. pulling silicon boules from said melt on a rotating seed rod, whereby said substrate is produced at a substantially higher impurity level than in conventional high purity semiconductor grade silicon while the resulting low-cost diode has desirable solar cell properties.

Claim 60

The product of claim 49 in which said liquid metal solvent is aluminum or an aluminum alloy.

Claim 61

The product of claim 50 in which the removing of silicon platelets from solution comprises cooling the liquid solution of silicon in molten aluminum to a temperature not below the eutectic temperature of about 577° C., thus forming a supersaturated hypereutectic aluminum-silicon solution and causing silicon platelets to precipitate therefrom.

Claim 62

The product of claim 51 in which said partially purified platelets are contacted with said silica slag at a temperature of from about 1410° C. to about 2000° C., said slag having an Si/O ratio of between about 1/4 and about 1/2, said slag being employed in an amount within the range of from about 8% to about 12% by weight based on the weight of silicon platelets melted in contact therewith.

Claim 63

The product of claim 52 and including electrical contacts affixed to the sides of said substrate.

Claim 64

The product of claim 49 and including electrical contacts affixed to the sides of said substrate, the product constituting a solar cell with said contacts serving to control the flow of electricity produced by the photovoltaic effect upon absorption of sunlight by said solar cell.

Claim 65

A low-cost solar cell comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrate, said substrate comprising a multigrained, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 0.5 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 0.5 ppm of chromium, about 0.5 ppm of calcium, and about 0.5 ppm of magnesium.

Claim 66

A low-cost solar cell comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrate, said substrate comprising a multigrained, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 0.5 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 0.5 ppm of chromium, about 0.5 ppm of calcium, and about 0.5 ppm of magnesium.

Claim 67

A low-cost solar cell comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrate, said substrate comprising a multigrained, directionally solidified refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 2 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 1 ppm of chromium, about 1 ppm of calcium, and about 1 ppm of magnesium.

Claim 68

A low-cost solar cell comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrate, said substrate comprising a multigrained, directionally solidified refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 1 ppm of aluminum, about 1 ppm of iron, about 2 ppm of titanium, about 2 ppm of boron, about 2 ppm of phosphorus, about 1 ppm of chromium, about 1 ppm of calcium, and about 1 ppm of magnesium.

Claim 69

A low-cost solar cell comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrte, said substrate comprising a multigrained, pulled directionally solidified refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.03 ppm of titanium, about 1.5 ppm of boron, about 0.2 ppm of phosphorus, about 0.02 ppm of chromium, about 0.7 ppm of calcium, and about 0.05 ppm of magnesium.

Claim 70

A low-cost solar cell comprising a p-type multigrained silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrte, said substrate comprising a multigrained, pulled directionally solidified refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations of up to, but not exceeding, about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.03 ppm of titanium, about 1.5 ppm of boron, about 0.2 ppm of phosphorus, about 0.02 ppm of chromium, about 0.7 ppm of calcium, and about 0.05 ppm of magnesium.

Claim 71

A low cost solar cell comprising a p-type single crystal silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrate, said substrate comprising a single crystal, pulled, directionally solidified, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations up to, but not exceeding, about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.02 ppm of titanium, about 1.5 ppm of boron, about 0.15 ppm of phosphorus, about 0.01 ppm of chromium, about 0.7 ppm of calcium, and about 0.17 ppm of magnesium.

Claim 72

A low cost solar cell comprising a p-type single crystal silicon substrate having pentavalent n-type impurities diffused into one side of the substrate to form a p-n junction therein, with electrical contacts affixed to the sides of said substrate, said substrate comprising a single crystal, pulled, directionally solidified, refined metallurgical silicon having a resistivity of from about 0.04 to about 0.2 ohm-cm, said silicon having impurity concentrations up to, but not exceeding, about 0.2 ppm of aluminum, about 0.15 ppm of iron, about 0.02 ppm of titanium, about 1.5 ppm of boron, about 0.15 ppm of phosphorus, about 0.01 ppm of chromium, about 0.7 ppm of calcium, and about 0.17 ppm of magnesium.