US3012865A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon purification process
Assignee: EIDP Inc
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Filing: 1957-11-25
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Granted: 1961-12-12
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Expires: 1977-11-25
Abstract
No abstract record available.
Inventors
- 👤 Remo A Pellin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:12
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/037
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
148 words
A PROCESS FOR PURIFYING ELEMENTAL SILICON IN A SINGLE OPERATION BY REPEATED PASSAGE OF SAID SILICON THROUGH THE SOLID AND MOLTEN STATES UNDER AN INERT GAS ATMOSPHERE WITH INTERMITTENT WITHDRAWAL OF IMPURITIES, CHARACTERIZED BY PLACING A SILICON CHARGE TO BE PURIFIED IN A THICK-WALL SILICA CONTAINER HAVING A WALL THICKNESS GREATER THAN ABOUT 0.2 MM., MELTING SAID SILICON CHARGE, PROGRESSIVELY SOLIDIFYING A PORTION THEREOF IN A VERTICAL DIRECTION TO SEGREGATE IMPURITIES IN THE MOLTEN PHASE, REMOVING THE REMAINING MOLTEN PHASE CONTAINING THE SEGREGATED IMPURITIES FROM CONTACT WITH THE SOLIDIFIED SILICON, ALTERNATELY REMELTING THE REMAINING SOLIDIFIED SILICON FROM EACH SUCCESSIVE SOLIDIFICATION, PROGRESSIVELY SOLIDIFYING A PORTION THEREOF IN A VERTICAL DIRECTION AND WITHDRAWING THE REMAINING MELT CONTAINING THE SEGREGATED IMPURITIES, MAINTAINING THE TEMPERATURE OF SAID SOLIDIFIED SILICON ABOVE 1100*C. THROUGHOUT THE ENTIRE OPERATION UNTIL THE FINAL PURIFIED SILICON PRODUCT IS PRODUCED, COOLING SAID PURIFIED SILICON, AND RECOVERING SAID PURIFIED SILICON.
Claim 2
Dependent Claim
148 words
A PROCESS FOR PURIFYING ELEMENTAL SILICON IN A SINGLE OPERATION BY REPEATED PASSAGE OF SAID SILICON THROUGH THE SOLID AND MOLTEN STATES UNDER AN INERT GAS ATMOSPHERE WITH INTERMITTENT WITHDRAWAL OF IMPURITIES, CHARACTERIZED BY PLACING A SILICON CHARGE TO BE PURIFIED IN A THICK-WALL SILICA CONTAINER HAVING A WALL THICKNESS GREATER THAN ABOUT 0.2 MM., MELTING SAID SILICON CHARGE, PROGRESSIVELY SOLIDIFYING A PORTION THEREOF IN A VERTICAL DIRECTION TO SEGREGATE IMPURITIES IN THE MOLTEN PHASE, REMOVING THE REMAINING MOLTEN PHASE CONTAINING THE SEGREGATED IMPURITIES FROM CONTACT WITH THE SOLIDIFIED SILICON, ALTERNATELY REMELTING THE REMAINING SOLIDIFIED SILICON FROM EACH SUCCESSIVE SOLIDIFICATION, PROGRESSIVELY SOLIDIFYING A PORTION THEREOF IN A VERTICAL DIRECTION AND WITHDRAWING THE REMAINING MELT CONTAINING THE SEGREGATED IMPURITIES, MAINTAINING THE TEMPERATURE OF SAID SOLIDIFIED SILICON ABOVE 1100*C. THROUGHOUT THE ENTIRE OPERATION UNTIL THE FINAL PURIFIED SILICON PRODUCT IS PRODUCED, COOLING SAID PURIFIED SILICON, AND RECOVERING SAID PURIFIED SILICON.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-12-11 | 1965-06-12 | 1965-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-12-11 | 1969-06-12 | 1969-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-12-11 | 1973-06-12 | 1973-12-12 | $7700.00 | Window Closed / Lapsed |