Apparatus for forming compound semiconductor thin-films

Claim 1

An apparatus for forming a thin-film of a compound semiconductor consisting of at least two elements on a substrate, which comprises a common vacuum container maintained at a first pressure level, a plurality of closed type crucibles for separately holding substances-to-be vaporized containing the component elements of said compound semiconductor and vaporizing said substances by heating to produce vapors thereof, said crucibles being provided in said vacuum container and each having at least one injection nozzle disposed opposite to said substrate, a plurality of temperature control sections for separately controlling the pressure of said vapors in said crucibles and maintaining said pressures at a second level higher than said first pressure level so that the vapors jetted from the injection nozzles of said crucibles respectively are subjected to supercooling as a result of adiabatic expansion through said nozzles to form clusters, said temperature control sections being provided in said vacuum container, a plurality of ionization chambers for ionizing said clusters, said ionization chambers being provided in said vacuum container and in the vicinity of the injection nozzles of said crucibles respectively, a plurality of acceleration power supplies provided between said substrate and respective ionization chambers for separately giving kinetic energy to the ionized clusters or cluster ions separately formed in said ionization chambers to make said cluster ions impinge on the surface of said substrate.

Claim 2

An apparatus for forming a thin-film of a compound semiconductor consisting of at least two elements on a substrate, which comprises a common vacuum container maintained at a first pressure level, a plurality of closed type crucibles for separately holding substances-to-be vaporized containing the component elements of said compound semiconductor and vaporizing said substances by heating to produce vapors thereof, said crucibles being provided in said vacuum container and each having at least one injection nozzle disposed opposite to said substrate, a plurality of temperature control sections for separately controlling the pressure of said vapors in said crucibles and maintaining said pressures at a second level higher than said first pressure level so that the vapors jetted from the injection nozzles of said crucibles respectively are subjected to supercooling as a result of adiabatic expansion through said nozzles to form clusters, said temperature control sections being provided in said vacuum container, a plurality of ionization chambers for ionizing said clusters, said ionization chambers being provided in said vacuum container and in the vicinity of the injection nozzles of said crucibles respectively, a plurality of acceleration power supplies provided between said substrate and respective ionization chambers for separately giving kinetic energy to the ionized clusters or cluster ions separately formed in said ionization chambers to make said cluster ions impinge on the surface of said substrate.