Patent US228961A successfully refreshed from Google Patents.
Patent US4196402A successfully refreshed from Google Patents.
US4196402A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Higher power semiconductor radiating mirror laser
Assignee: Laser Photonics Inc
•
Filing: 1977-02-25
•
Granted: 1980-04-01
•
Expires: 1997-02-25
Abstract
Abstract Radiating mirror lasers in which a semiconductor active element containing an appropriately fabricated heterostructure configuration is formed as one end mirror of a two-mirror resonant cavity. The active element is fabricated from an alloy semiconductor compound such a lead salt alloy, the bandgap of which may be varied by varying the relative composition of its constituents. By properly selecting the compound and its composition, lasers may be made for operation at wavelengths that span the ultraviolet, visible and infrared portions of the spectrum. The lasers combine the inherently high power characteristics of a radiating mirror structure with a wide spectral coverage. Arrangements are disclosed for increasing power efficiencies, for tuning the operating wavelength over a wide range and for otherwise improving the utility of the lasers.
Inventors
- 👤 Jack F. Butler
- 👤 Kenneth W. Nill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/14
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
154 words
A semiconductor radiating mirror laser comprising a heterostructure active element including a first and a second major surface, an active layer defining said first surface and a substrate integral with said active layer and defining said second surface, said active layer being formed of a semiconductor compound having a first energy bandgap, said substrate being formed of a semiconductor compound having a second energy bandgap greater than said first energy bandgap, means for pumping said active layer with a pump beam incident upon said first surface to enable the emission of radiation from said active layer at a wavelength corresponding to said first bandgap, and reflective means spaced from said first surface of said active element and defining with said active element a resonant cavity for said radiation that is emitted essentially normal to said first surface, a portion of said radiation being extracted from said cavity as an output beam from said laser.
Claim 2
Dependent Claim
154 words
A semiconductor radiating mirror laser comprising a heterostructure active element including a first and a second major surface, an active layer defining said first surface and a substrate integral with said active layer and defining said second surface, said active layer being formed of a semiconductor compound having a first energy bandgap, said substrate being formed of a semiconductor compound having a second energy bandgap greater than said first energy bandgap, means for pumping said active layer with a pump beam incident upon said first surface to enable the emission of radiation from said active layer at a wavelength corresponding to said first bandgap, and reflective means spaced from said first surface of said active element and defining with said active element a resonant cavity for said radiation that is emitted essentially normal to said first surface, a portion of said radiation being extracted from said cavity as an output beam from said laser.
Claim 3
Dependent Claim
39 words
A laser as recited in claim 1 in which the semiconductor compound of said active layer and said substrate comprise an alloy semiconductor compound having an energy bandgap that is variable by varying the relative composition of its constituents.
Claim 4
Dependent Claim
17 words
A laser as recited in claim 2 in which said alloy semiconductor compound comprises a lead-salt alloy.
Claim 5
Dependent Claim
50 words
A laser as recited in claim 2 in which said alloy semiconductor compound is selected from the group of compounds consisting of Pb 1-x Sn x Se, Pb 1-x Sn x Te, Ga 1-x Al x As, CdS 1-x Se x and quaternary and higher order alloys of these compounds.
Claim 6
Dependent Claim
18 words
A laser as recited in claim 1 in which said pumping means comprises an optical beam pumping source.
Claim 7
Dependent Claim
38 words
A laser as recited in claim 1 further including mode selection means disposed between said first surface of said active layer and said reflective means and within said resonant cavity for restricting said radiation to a narrow bandwidth.
Claim 8
Dependent Claim
26 words
A laser as recited in claim 6 in which said mode selection means is adjustable within said resonant cavity to tune the bandwidth of said radiation.
Claim 9
Dependent Claim
41 words
A laser as recited in claim 1 in which the alloy semiconductor compound of said substrate has a carrier concentration of a sufficiently high level that the reflectance of said substrate to said pump beam and said radiation is essentially metallic.
Claim 10
Dependent Claim
44 words
A laser as recited in claim 1 in which said active layer includes at said first surface a grid of material that is absorptive to said radiation to suppress amplification of said radiation that is emitted by said active layer along said first surface.
Claim 11
Dependent Claim
35 words
A laser as recited in claim 9 in which said grid is formed of the same semiconductor compound as said active layer but having a third energy bandgap that is narrower that said first bandgap.
Claim 12
Dependent Claim
170 words
A semiconductor radiating mirror laser comprising a heterostructure active element including at least one major surface and a grid of optically absorptive material formed within said active element at said surface, said active element being formed of a semiconductor compound having a first energy bandgap, said grid being formed of the same semiconductor compound as said active element but having a second energy bandgap that is narrower than said first bandgap, means for pumping said active element with a pump beam incident upon said surface to enable the emission of radiation from said active element at a wavelength corresponding to said first bandgap, and reflective means spaced from said surface of said active element and defining with said active element a resonant cavity for said radiation that is emitted essentially normal to said surface, a portion of said radiation being extracted from said cavity as an output beam from said laser, said grid being absorptive to said radiation to suppress amplification of said radiation that is emitted along said surface.
Claim 13
Dependent Claim
170 words
A semiconductor radiating mirror laser comprising a heterostructure active element including at least one major surface and a grid of optically absorptive material formed within said active element at said surface, said active element being formed of a semiconductor compound having a first energy bandgap, said grid being formed of the same semiconductor compound as said active element but having a second energy bandgap that is narrower than said first bandgap, means for pumping said active element with a pump beam incident upon said surface to enable the emission of radiation from said active element at a wavelength corresponding to said first bandgap, and reflective means spaced from said surface of said active element and defining with said active element a resonant cavity for said radiation that is emitted essentially normal to said surface, a portion of said radiation being extracted from said cavity as an output beam from said laser, said grid being absorptive to said radiation to suppress amplification of said radiation that is emitted along said surface.
Claim 14
Dependent Claim
39 words
A lase as recited in claim 11 in which the semiconductor compounds of said active element and said grid comprise an alloy semiconductor compound having an energy bandgap that is variable by varying the relative composition of its constituents.
Claim 15
Dependent Claim
17 words
A laser as recited in claim 12 in which said alloy semiconductor compound comprises a lead-salt alloy.
Claim 16
Dependent Claim
50 words
A laser as recited in claim 12 in which said alloy semiconductor compound is selected from the group of compounds consisting of Pb 1-x Sn x Se, Pb 1-x Sn x Te, Ga 1-x Al x As, CdS 1-x Se x and quaternary and higher order alloys of these compounds.
Claim 17
Dependent Claim
90 words
A laser as recited in claim 11 in which said active element further includes an active layer defining said surface and in which said grid is formed and a substrate integral with said active layer, and in which said active layer, said substrate and said grid are formed of one and the same alloy semiconductor compound but having differing energy bandgaps, the bandgap of said substrate being greater than the bandgap of said active layer, and the bandgap of said grid being narrower than the bandgap of said active layer.
Claim 18
Dependent Claim
18 words
A laser as recited in claim 11 in which said pumping means comprises an optical beam pumping source.
Claim 19
Dependent Claim
37 words
A laser as recited in claim 11 further including mode selection means disposed between said surface of said active element and said reflective means and within said resonant cavity for restricting said radiation to a narrow bandwidth.
Claim 20
Dependent Claim
26 words
A laser as recited in claim 17 in which said mode selection means is adjustable within said resonant cavity to tune the bandwidth of said radiation.
Claim 21
Dependent Claim
41 words
A laser as recited in claim 15 in which the alloy semiconductor compound of said substrate has a carrier concentration of a sufficiently high level that the reflectance of said substrate to said pump beam and said radiation is essentially metallic.
Claim 22
Dependent Claim
189 words
A semiconductor radiating mirror laser comprising an active element including a first and a second major surface, an active layer defining said first surface, a substrate integral with said active layer and defining said second surface and a grid of optically absorptive material formed within said active layer at said first surface, said active layer, said substrate and said grid being formed of one and the same alloy semiconductor compound but having differing energy bandgaps, the bandgap of said substrate being greater than the bandgap of said active layer, the bandgap of said grid being narrower than the bandgap of said active layer, means for pumping said active element with a pump beam incident upon said first surface to enable the emission of radiation from said active layer at a wavelength corresponding to the bandgap of said active layer, and reflective means spaced from said first surface of said active element and defining with said active element a resonant cavity for said radiation that is emitted essentially normal to said first surface, a portion of said radiation being extracted from said cavity as an output beam from said laser.
Claim 23
Dependent Claim
189 words
A semiconductor radiating mirror laser comprising an active element including a first and a second major surface, an active layer defining said first surface, a substrate integral with said active layer and defining said second surface and a grid of optically absorptive material formed within said active layer at said first surface, said active layer, said substrate and said grid being formed of one and the same alloy semiconductor compound but having differing energy bandgaps, the bandgap of said substrate being greater than the bandgap of said active layer, the bandgap of said grid being narrower than the bandgap of said active layer, means for pumping said active element with a pump beam incident upon said first surface to enable the emission of radiation from said active layer at a wavelength corresponding to the bandgap of said active layer, and reflective means spaced from said first surface of said active element and defining with said active element a resonant cavity for said radiation that is emitted essentially normal to said first surface, a portion of said radiation being extracted from said cavity as an output beam from said laser.
References Cited (Backward Citations)
US3794844A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-01 | 1983-10-01 | 1984-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-01 | 1987-10-01 | 1988-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-01 | 1991-10-01 | 1992-04-01 | $7700.00 | Window Closed / Lapsed |