US3794844A
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Method and means of construction of a semiconductor material for use in a laser
Assignee: Massachusetts Institute of Technology
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Filing: 1973-06-25
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Granted: 1974-02-26
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Expires: 1993-06-25
Abstract
Abstract A semiconductor material for use as a lasing medium is made of a solid solution of two materials, said materials being selected so that over some range of composition the solid solution is a semiconductor alloy having a direct band gap which is increased or decreased, depending on the proportion of said materials in the solid solution, there being a certain proportion at which the band gap is zero, at a given temperature and pressure, whereas greater or lesser proportions than said certain proportion results in an increase in the band gap of the semiconductor from said zero band gap.
Inventors
- 👤 J Dimmock
- 👤 I Melngailis
- 👤 A Strauss
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:38
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
In a radiation detector, a semiconductor material upon which radiation is incident and produces a signal representative of the wavelength of the incident radiation consisting essentially of: a solid solution of at last two semiconductor materials each of which is composed of a different element selected from Group IV and the same element selected from Group VI of the Periodic Table in proportions so selected to provide a predetermined band gap for the solid solution of semiconductor material, said predetermined band gap being less than the band gap of either of the two semiconductor materials under equivalent conditions.
Claim 2
Dependent Claim
98 words
In a radiation detector, a semiconductor material upon which radiation is incident and produces a signal representative of the wavelength of the incident radiation consisting essentially of: a solid solution of at last two semiconductor materials each of which is composed of a different element selected from Group IV and the same element selected from Group VI of the Periodic Table in proportions so selected to provide a predetermined band gap for the solid solution of semiconductor material, said predetermined band gap being less than the band gap of either of the two semiconductor materials under equivalent conditions.
Claim 3
Dependent Claim
18 words
In a radiation detector as in claim 1, wherein the predetermined band gap is less than 0.1 eV.
Claim 4
Dependent Claim
18 words
In a radiation detector as in claim 1 wherein the compounds are each direct gap type semiconductor materials.
Claim 5
Dependent Claim
61 words
In a radiation detector as in claim 3, wherein one of the compounds has a first energy state at the conduction band edge thereof and a second energy state at the valence band edge thereof, and the other compound has said first energy state at the valence banD edge thereof and said second energy state at the conduction band edge thereof.
Claim 6
Dependent Claim
26 words
In a radiation detector as in claim 4, wherein said first energy state is the L6 state and said second energy state is the L6 state.
Claim 7
Dependent Claim
22 words
In a radiation detector as in claim 1, wherein one of the Group IV elements is lead and the other is tin.
Claim 8
Dependent Claim
20 words
In a radiation detector as in claim 6, wherein the lead compound is PbTe and the tin compound is SnTe.
Claim 9
Dependent Claim
20 words
In a radiation detector as in claim 6, wherein the lead compound is PbSe and the tin compound is SnSe.
Claim 10
Dependent Claim
32 words
In a radiation detector as in claim 6, wherein the number of mols of Pb in said solid solution is greater than the number of mols of Sn in the solid solution.
Claim 11
Dependent Claim
22 words
In a radiation detector as in claim 7, wherein the material has the formula PbxSn1 xTe and x is greater than 0.30.
Claim 12
Dependent Claim
22 words
In a radiation detector as in claim 8, wherein the material has the formula PbxSn1 xSe and x is greater than 0.65.
References Cited (Backward Citations)
US3568087A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-25 | 1977-08-27 | 1978-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-25 | 1981-08-27 | 1982-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-25 | 1985-08-27 | 1986-02-26 | $7700.00 | Window Closed / Lapsed |