Patent US4195355A successfully refreshed from Google Patents.
US4195355A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing a ferroelectric device and devices manufactured thereby
Assignee: Technovation Inc
•
Filing: 1976-02-17
•
Granted: 1980-03-25
•
Expires: 1996-02-17
Abstract
Abstract A process for manufacturing a ferroelectric device includes the steps of chemically cleaning a substrate, followed by radio frequency etching of the substrate. The substrate is then pre-heated. A first electrical contact is then formed on the substrate, and over a portion of the first electrical contact there is vapor deposited a stable thin film of potassium nitrate. Then a second electrical contact is formed over at least a part of the thin film of potassium nitrate. A covering of silicon monoxide is then vacuum deposited over the assemblage of the first and second electrical contacts and the potassium nitrate. The assemblage is then annealed for approximately twenty-four hours at a temperature of approximately 160° C.
Inventors
- 👤 George A. Rohrer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:42
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; H; H01; H01G; H01G7/00; H01G7/02; H01G7/025
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
160 words
A process for manufacturing a ferroelectric device, comprising the steps of: forming a first electrical contact; forming, by vapor deposition performed in a vacuum at a pressure no greater than 1×10 -5 Torr and at a temperature of from about 390° C. to 440° C., a stable thin film of potassium nitrate over at least a portion of said first electrical contact; relieving said vacuum to a pressure of approximately one atmosphere with a dry predetermined gas for a first predetermined period of time; reapplying said vacuum; forming a second electrical contact over at least a portion of said stable thin film of potassium nitrate; vacuum depositing a covering of silicon monoxide over said first electrical contact, said thin film of potassium nitrate, and said second electrical contact; and heating said first and second electrical contacts, said thin film of potassium nitrate, and said covering of silicon monoxide for a second predetermined period of time and at a predetermined temperature.
Claim 2
Dependent Claim
160 words
A process for manufacturing a ferroelectric device, comprising the steps of: forming a first electrical contact; forming, by vapor deposition performed in a vacuum at a pressure no greater than 1×10 -5 Torr and at a temperature of from about 390° C. to 440° C., a stable thin film of potassium nitrate over at least a portion of said first electrical contact; relieving said vacuum to a pressure of approximately one atmosphere with a dry predetermined gas for a first predetermined period of time; reapplying said vacuum; forming a second electrical contact over at least a portion of said stable thin film of potassium nitrate; vacuum depositing a covering of silicon monoxide over said first electrical contact, said thin film of potassium nitrate, and said second electrical contact; and heating said first and second electrical contacts, said thin film of potassium nitrate, and said covering of silicon monoxide for a second predetermined period of time and at a predetermined temperature.
Claim 3
Dependent Claim
34 words
A process according to claim 1, wherein: said second predetermined period of time is no less than 15 minutes; and said predetermined temperature falls within the range of approximately 100° C. through 300° C.
Claim 4
Dependent Claim
17 words
A process according to claim 1, wherein said first and second electrical contacts are formed from gold.
Claim 5
Dependent Claim
26 words
A process according to claim 1, wherein: said stable thin film of potassium nitrate is vapor deposited to a thickness no greater than 1500 Angstrom units.
Claim 6
Dependent Claim
32 words
A process according to claim 1, wherein: said thin film of potassium nitrate is vapor deposited to a thickness falling in the range of approximately 600 Angstrom units through 800 Angstrom units.
Claim 7
Dependent Claim
23 words
A process according to claim 1, including: the step of covering the ferroelectric device with a silicon gel when said device is packaged.
Claim 8
Dependent Claim
27 words
A process according to claim 5, wherein: said first and second electrical contacts are formed from gold and each have a thickness of approximately 150 Angstrom units.
Claim 9
Dependent Claim
36 words
A process according to claim 1, including: prior to forming said first electrical contact, a substrate is first chemically cleaned, radio frequency etched, and preheated before said first electrical contact is vacuum deposited on said substrate.
Claim 10
Dependent Claim
37 words
A process according to claim 1, including: at least one additional heating step is performed in the process after said first electrical contact is formed, and prior to the vacuum deposition of said covering of silicon monoxide.
Claim 11
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 1.
Claim 12
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 2.
Claim 13
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 3.
Claim 14
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 4.
Claim 15
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 5.
Claim 16
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 6.
Claim 17
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 7.
Claim 18
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 8.
Claim 19
Dependent Claim
12 words
A ferroelectric device manufactured in accordance with the process of claim 9.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-25 | 1983-09-24 | 1984-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-25 | 1987-09-24 | 1988-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-25 | 1991-09-24 | 1992-03-25 | $7700.00 | Window Closed / Lapsed |