Patent US4195307A successfully refreshed from Google Patents.
US4195307A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabricating integrated circuits incorporating high-performance bipolar transistors
Assignee: International Business Machines Corp
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Filing: 1978-04-17
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Granted: 1980-03-25
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Expires: 1998-04-17
Abstract
Abstract A semiconductor device is shown which utilizes a mesa emitter structure in a silicon body. The mesa emitter is formed in the silicon semiconductor body and then passivated on its sidewalls using a suitable dielectric. The base region is formed both under the mesa emitter and adjacent thereto. The emitter-base junction is substantially in one plane and substantially without a sidewall component. Contacts are provided to the emitter and to the base region surrounding the mesa emitter. The resulting structure is such that a base contact can be within a few thousand angstroms of the intrinsic base region.
Inventors
- 👤 Chakrapani G. Jambotkar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D10/00; H10D10/40; H10D62/00; H10D62/10; H10D62/13; H10D62/133
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
141 words
A high performance bipolar semiconductor device in a silicon body comprising: a mesa emitter having a height of between about 5000 and 12000 Angstroms above said silicon body; passivation on the side peripheral surface of said mesa emitter; a base region including extrinsic and intrinsic base regions; said extrinsic base region surrounding said mesa emitter in said silicon body; said intrinsic base region forming a junction with said mesa emitter substantially in one plane; and an electrical contact to the top surface of said mesa emitter; an electrical contact to said extrinsic base region; said contact to said base region surrounding the said emitter mesa and abutting the said passivation on the peripheral surface of said emitter; and the thickness of said electrical contacts are substantially equal and about 1.5 to 2 times smaller than the height of said mesa emitter.
Claim 2
Dependent Claim
141 words
A high performance bipolar semiconductor device in a silicon body comprising: a mesa emitter having a height of between about 5000 and 12000 Angstroms above said silicon body; passivation on the side peripheral surface of said mesa emitter; a base region including extrinsic and intrinsic base regions; said extrinsic base region surrounding said mesa emitter in said silicon body; said intrinsic base region forming a junction with said mesa emitter substantially in one plane; and an electrical contact to the top surface of said mesa emitter; an electrical contact to said extrinsic base region; said contact to said base region surrounding the said emitter mesa and abutting the said passivation on the peripheral surface of said emitter; and the thickness of said electrical contacts are substantially equal and about 1.5 to 2 times smaller than the height of said mesa emitter.
Claim 3
Dependent Claim
35 words
The device of claim 1 wherein a subcollector is located under said base region, a collector reachthrough made adjacent to said base region to said subcollector and an electrical contact made to said collector reachthrough.
Claim 4
Dependent Claim
38 words
The device of claim 1 wherein the said mesa emitter is N type, said base is P type and the said P-type base is of lower P-type concentration only in the base region below the base-mesa emitter junction.
Claim 5
Dependent Claim
24 words
The device of claim 1 wherein the thickness of said passivation on the peripheral surface of said emitter is less than about 4000 A.
Claim 6
Dependent Claim
157 words
An integrated circuit structure comprising: a plurality of high performance bipolar semiconductor devices electrically isolated from one another in a silicon body; and each of said devices comprising a mesa emitter having a height of between about 5000 and 12000 Angstroms above said silicon body, passivation on the side peripheral surface of said mesa emitter, a base region including extrinsic and intrinsic base regions, said extrinsic base region surrounding said mesa emitter in said silicon body, said intrinsic base region forming a junction with said mesa emitter substantially in one plane, an electrical contact to the top surface of said mesa emitter, an electrical contact to said extrinsic base region, said contact to said base region surrounding the said emitter mesa and abutting the said passivation on the peripheral surface of said emitter, and the thicknesses of said electrical contacts are substantially equal and about 1.5 to 2 times smaller than the height of said mesa emitter.
Claim 7
Dependent Claim
157 words
An integrated circuit structure comprising: a plurality of high performance bipolar semiconductor devices electrically isolated from one another in a silicon body; and each of said devices comprising a mesa emitter having a height of between about 5000 and 12000 Angstroms above said silicon body, passivation on the side peripheral surface of said mesa emitter, a base region including extrinsic and intrinsic base regions, said extrinsic base region surrounding said mesa emitter in said silicon body, said intrinsic base region forming a junction with said mesa emitter substantially in one plane, an electrical contact to the top surface of said mesa emitter, an electrical contact to said extrinsic base region, said contact to said base region surrounding the said emitter mesa and abutting the said passivation on the peripheral surface of said emitter, and the thicknesses of said electrical contacts are substantially equal and about 1.5 to 2 times smaller than the height of said mesa emitter.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-25 | 1983-09-24 | 1984-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-25 | 1987-09-24 | 1988-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-25 | 1991-09-24 | 1992-03-25 | $7700.00 | Window Closed / Lapsed |