Patent US4192706A successfully refreshed from Google Patents.
US4192706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gas-etching device
Assignee: Toshiba Corp
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Filing: 1978-08-15
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Granted: 1980-03-11
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Expires: 1998-08-15
Abstract
Abstract A gas etching device comprises a vacuum vessel provided with a means for supplying into the vacuum vessel a gas containing therein oxygen atoms and a gas containing therein fluorine atoms, an etching gas-producing region provided within the vacuum vessel and provided with an exciting means for exciting said gases, and a reaction region provided within the vacuum vessel and disposed at a position spaced apart from the etching gas-producing region and having disposed therein a material to be etched. By the use of this device, etching can be performed with no deterioration of a resist, accordingly with success in fine fabrication, and with no damages to the material to be etched. Further, during the etching, the condition of the etching process can be watched with the naked eyes under illumination of natural light.
Inventors
- 👤 Yasuhiro Horiike
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:21
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32357; H05; H05H; H05H1/00; H05H1/24; H05H1/46
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
74 words
A gas etching process comprising: introducing into a discharge region an oxygen gas and a flurocarbon gas, producing a long life active species etching gas by applying high frequency power to said gases in the discharge region, and reacting said etching gas with the material to be etched in a reaction region spaced from the discharge region a distance such that electric fields in the discharge region do not extend to the reaction region.
Claim 2
Dependent Claim
74 words
A gas etching process comprising: introducing into a discharge region an oxygen gas and a flurocarbon gas, producing a long life active species etching gas by applying high frequency power to said gases in the discharge region, and reacting said etching gas with the material to be etched in a reaction region spaced from the discharge region a distance such that electric fields in the discharge region do not extend to the reaction region.
Claim 3
Dependent Claim
28 words
A gas etching process according to claim 1 wherein the amount of said oxygen gas is at least 10% by volume of the amount of said flurocarbon gas.
Claim 4
Dependent Claim
92 words
A plasma-free gas etching process for etching a material comprising: introducing gas into an etching gas-producing region, activating the gas with a high frequency discharging device thereby forming a long-life active species as the etching gas, and withdrawing the etching gas from the etching gas-producing region into a connecting reaction region spaced from the etching gas-producing region a fixed distance providing electrical isolation from electric fields in the etching gas-producing region, thereby causing the etching gas to remain sufficiently activated to etch the material in the reaction region but to be plasma-free.
Claim 5
Dependent Claim
92 words
A plasma-free gas etching process for etching a material comprising: introducing gas into an etching gas-producing region, activating the gas with a high frequency discharging device thereby forming a long-life active species as the etching gas, and withdrawing the etching gas from the etching gas-producing region into a connecting reaction region spaced from the etching gas-producing region a fixed distance providing electrical isolation from electric fields in the etching gas-producing region, thereby causing the etching gas to remain sufficiently activated to etch the material in the reaction region but to be plasma-free.
Claim 6
Dependent Claim
45 words
A plasma-free gas etching process for etching a material according to claim 3 further comprising: positioning the high frequency discharging device outside the etching gas-producing region, and controlling the rate of flow of the etching gas from the etching gas-producing region into the reaction region.
Claim 7
Dependent Claim
20 words
A plasma-free gas etching process for etching a material according to claim 4 further comprising: cooling the etching gas-producing region.
Claim 8
Dependent Claim
32 words
A plasma-free gas etching process for etching a material according to claim 3 further comprising: interposing a bended portion in the space between the etching gas-producing region and the connecting reaction region.
Claim 9
Dependent Claim
24 words
A plasma-free gas etching process for etching a material according to claim 6 further comprising: defining a substantially right-angle bend with the bended portion.
Claim 10
Dependent Claim
36 words
A plasma-free gas etching process for etching a material according to claim 3 further comprising: supporting the material etched in the reaction region such that the etching gas flows perpendicularly to the plane of its surface.
Claim 11
Dependent Claim
46 words
A plasma-free gas etching process for etching a material according to claim 3 further comprising: disposing a pair of apertured electrodes connected to a high frequency power source perpendicularly to the flow of the gases in the etching gas-producing region as the high frequency discharging device.
Claim 12
Dependent Claim
20 words
A plasma-free gas etching process for etching a material accoring to claim 3 further comprising: cooling the etching gas-producing region.
Claim 13
Dependent Claim
47 words
A plasma-free gas etching process for etching a material according to claim 3 further comprising: mixing an oxygen gas and freon gas, the amount of the oxygen gas being at least 10% by volume of the amount of the freon gas, for activation as the etching gas.
Claim 14
Dependent Claim
26 words
A plasma-free gas etching process for etching a material according to claim 3 further comprising: branching the etching gas to selected locations in the reaction region.
Claim 15
Dependent Claim
25 words
A plasma-free gas etching process for etching a material according to claim 3 further comprising: branching the etching gas to a plurality of reaction regions.
Claim 16
Dependent Claim
16 words
A gas etching process according to claim 1 wherein the flurocarbon gas is CR 4 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-11 | 1983-09-10 | 1984-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-11 | 1987-09-10 | 1988-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-11 | 1991-09-10 | 1992-03-11 | $7700.00 | Window Closed / Lapsed |