Patent US4187555A successfully refreshed from Google Patents.
US4187555A
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Conductor access magnetic bubble memory arrangement
Assignee: AT&T Inc
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Filing: 1979-02-23
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Granted: 1980-02-05
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Expires: 1999-02-23
Abstract
Abstract A conductor access, magnetic bubble memory is organized in a major-minor mode by including transfer locations in the conducting layers which define the normal bubble propagation implementation. An attractive partitioning of each of the two conducting layers permits the minor loops and the major loop to be operated synchronously or independently resulting in short duty cycles which permit low power operation to be achieved.
Inventors
- 👤 Andrew H. Bobeck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:36
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0875; G11C19/0883
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
167 words
A magnetic bubble memory comprising a host layer of material in which magnetic bubbles can be moved, and means for defining in said layer at least first and second multistage paths for magnetic bubbles, a transfer location adapted for moving bubbles from said first to said second path, said paths and said transfer location being defined by first and second patterns of associated apertures in first and second layers of electrically conducting material adjacent said host layer, associated ones of said apertures in said first and second layers being offset from one another in a manner to generate changing patterns of magnetic field gradients for moving bubbles along said paths synchronously in response to a first pulse sequence applied to said first and second layers, said apertures at said transfer location having geometries and being disposed with respect to one another to generate magnetic field gradients along said first path and from said first to said second path in response to first and second pulse sequences respectively.
Claim 2
Dependent Claim
167 words
A magnetic bubble memory comprising a host layer of material in which magnetic bubbles can be moved, and means for defining in said layer at least first and second multistage paths for magnetic bubbles, a transfer location adapted for moving bubbles from said first to said second path, said paths and said transfer location being defined by first and second patterns of associated apertures in first and second layers of electrically conducting material adjacent said host layer, associated ones of said apertures in said first and second layers being offset from one another in a manner to generate changing patterns of magnetic field gradients for moving bubbles along said paths synchronously in response to a first pulse sequence applied to said first and second layers, said apertures at said transfer location having geometries and being disposed with respect to one another to generate magnetic field gradients along said first path and from said first to said second path in response to first and second pulse sequences respectively.
Claim 3
Dependent Claim
40 words
A magnetic bubble memory in accordance with claim 1 wherein said apertures at said transfer location are relatively small and relatively large in said first and second layers respectively said relatively small aperture being encompassed by said relatively large aperture.
Claim 4
Dependent Claim
19 words
A magnetic bubble memory in accordance with claim 2 wherein said first and second paths are closed loop paths.
Claim 5
Dependent Claim
35 words
A magnetic bubble memory in accordance with claim 2 including a plurality of said first paths wherein said first paths are all closed loops and a transfer location associated with each of said first paths.
Claim 6
Dependent Claim
80 words
A magnetic bubble memory in accordance with claim 4 wherein said second path also comprises a closed loop and wherein a second transfer location is associated with each of said first transfer location, and means for selectively moving bubbles at said first and second transfer locations from said first paths to different stages of said second path and from different stages of said second path to different ones of said first paths responsive to second and third pulse sequences respectively.
Claim 7
Dependent Claim
68 words
A magnetic bubble memory in accordance with claim 5 wherein each of said first and second layers is partitioned into first and second portions corresponding to said first paths and to said second path respectively and means for applying said first, second, and third pulse sequences to said first portions of said first and second layers and to said second portions of said first and second layers selectively.
Claim 8
Dependent Claim
127 words
A magnetic bubble memory comprising a host layer of material in which magnetic bubble can be moved and means for moving magnetic bubbles in the layer, the means comprising first and second layers of electrically conducting material including first and second sets of like apertures respectively for defining at least first and second paths for moving magnetic bubbles therealong in response to a first pulse sequence impressed in the layers, the memory being CHARACTERIZED IN THAT the first and second layers also include relatively small and large apertures respectively, for defining a transfer location the small aperture being positioned to be encompassed by the large aperture, the transfer location being responsive to a second pulse sequence to move a bubble from the second to the first path.
Claim 9
Dependent Claim
127 words
A magnetic bubble memory comprising a host layer of material in which magnetic bubble can be moved and means for moving magnetic bubbles in the layer, the means comprising first and second layers of electrically conducting material including first and second sets of like apertures respectively for defining at least first and second paths for moving magnetic bubbles therealong in response to a first pulse sequence impressed in the layers, the memory being CHARACTERIZED IN THAT the first and second layers also include relatively small and large apertures respectively, for defining a transfer location the small aperture being positioned to be encompassed by the large aperture, the transfer location being responsive to a second pulse sequence to move a bubble from the second to the first path.
Claim 10
Dependent Claim
26 words
A magnetic bubble memory in accordance with claim 5 or claim 7 wherein said relatively small and large apertures are oval and have a common center.
References Cited (Backward Citations)
US4143420A
Cited
US4143419A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-02-04 | 1983-08-06 | 1984-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-02-04 | 1987-08-06 | 1988-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-02-04 | 1991-08-06 | 1992-02-05 | $7700.00 | Window Closed / Lapsed |