Magnetic bubble memory with single level electrically-conducting, drive arrangement

Claim 2

A magnetic bubble memory comprising a layer of material in which magnetic bubbles can be moved, a film of electrically-conducting material overlying said layer, said film comprising a plurality of sets of apertures each of said sets defining a path for the movement of bubbles therealong, means associated with each of said apertures for providing rest positions for bubbles offset therefrom, and means for providing a flow of current in said film alternately in first and second directions for moving bubbles to positions offset from associated rest positions.

Claim 3

A magnetic memory in accordance with claim 1 wherein said first and second directions are transverse to said paths.

Claim 4

A magnetic bubble memory in accordance with claim 2 wherein said means for providing rest positions includes a rest position located downstream along the path of bubble movement from each edge of each of said apertures in said path.

Claim 5

A magnetic bubble memory in accordance with claim 3 wherein each of said rest positions comprises an ion-implanted region.

Claim 6

A magnetic bubble memory in accordance with claim 2 wherein each of said rest positions comprises a mesa in the surface of said bubble layer.

Claim 7

A magnetic bubble memory in accordance with claim 4 wherein each of said ion-implanted regions is coextensive with the transverse dimension of the associated aperture and has a dimension along said path equal to half that of said aperture.

Claim 8

A magnetic bubble memory in accordance with claim 3 wherein said means for providing a flow of current includes first and second lands astride said paths and means for connecting to said paths in a manner to provide overall uniform flow of current transverse to said paths in response to current signals applied thereto.

Claim 9

A magnetic bubble memory including a layer of magnetic material in which magnetic bubbles can be moved, means for defining rest positions for bubbles in said layer, and electrical conductor means for moving bubbles to positions offset from said rest positions, said last-mentioned means comprising and electrically-conducting film overlying said layer and including sets of apertures therein disposed, when pulsed, to move bubbles to said offset positions along a plurality of paths defined by said apertures.

Claim 10

A magnetic bubble memory including a layer of magnetic material in which magnetic bubbles can be moved, means for defining rest positions for bubbles in said layer, and electrical conductor means for moving bubbles to positions offset from said rest positions, said last-mentioned means comprising and electrically-conducting film overlying said layer and including sets of apertures therein disposed, when pulsed, to move bubbles to said offset positions along a plurality of paths defined by said apertures.

Claim 11

A magnetic bubble memory (10) comprising a layer (11) of magnetic material in which magnetic bubbles can be moved, and rest positions (14) for bubbles in the layer, and electrical conductor means for moving bubbles in the layer, characterized in that the memory includes a film (12) of electrically-conducting material including a plurality of sets of apertures (14) for defining paths for magnetic bubbles in layer 11 along with means (70 and 71) adapted for providing overall uniform current flow in response to bipolar current pulses applied thereto, the memory also comprising means (16) for applying bipolar current pulses to the last-mentioned means for moving bubbles to positions offset from rest positions.

Claim 12

A magnetic bubble memory (10) comprising a layer (11) of magnetic material in which magnetic bubbles can be moved, and rest positions (14) for bubbles in the layer, and electrical conductor means for moving bubbles in the layer, characterized in that the memory includes a film (12) of electrically-conducting material including a plurality of sets of apertures (14) for defining paths for magnetic bubbles in layer 11 along with means (70 and 71) adapted for providing overall uniform current flow in response to bipolar current pulses applied thereto, the memory also comprising means (16) for applying bipolar current pulses to the last-mentioned means for moving bubbles to positions offset from rest positions.

Claim 13

A magnetic bubble memory comprising a layer of magnetic material in which magnetic bubbles can be moved, and means for providing rest positions for bubbles in said layer, said memory being characterized by signal-responsive means for providing substantially uniform overall current flow in a plane coupled to said layer, and means for causing a pattern of localized perturbations in said current flow for moving bubbles to positions offset from said rest positions.

Claim 14

A magnetic bubble memory comprising a layer of magnetic material in which magnetic bubbles can be moved, and means for providing rest positions for bubbles in said layer, said memory being characterized by signal-responsive means for providing substantially uniform overall current flow in a plane coupled to said layer, and means for causing a pattern of localized perturbations in said current flow for moving bubbles to positions offset from said rest positions.