Patent US4183038A successfully refreshed from Google Patents.
US4183038A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Mitsubishi Electric Corp
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Filing: 1978-03-29
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Granted: 1980-01-08
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Expires: 1998-03-29
Abstract
Abstract N type GaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr. Zn is diffused into predetermined portions of those layers to a depth reaching the substrate to form pn junctions between the original n type regions of the layers and their regions are converted to the p from the n type conductivity. The pn junction formed in the GaAs layer serves as a light emitting region.
Inventors
- 👤 Hirofumi Namizaki
- 👤 Wataru Susaki
- 👤 Hirofumi Kan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2203; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
163 words
A semiconductor laser device comprising an electrically semi-insulating semiconductor substrate, a first semiconductor layer of a first type conductivity formed on said semiconductor substrate, a second semiconductor layer of the first type conductivity formed on said first semiconductor layer and narrower in forbidden band-width than said first semiconductor layer, a third semiconductor of the first type conductivity formed on said second semiconductor layer and broader in forbidden band-width than said second semiconductor layer, a fourth semiconductor portion of a second type conductivity continuously formed in predetermined regions of said first, second and third semiconductor layers and extending into said semiconductor substrate, said fourth semiconductor portion forming pn junctions with said first, second and third semiconductor layers, the pn junction in said second semiconductor layer serving as a light emitting region, a first electrode disposed in ohmic contact with a semiconductor region having said first type conductivity and a second electrode disposed in ohmic contact with a semiconductor region having said second type conductivity.
Claim 2
Dependent Claim
163 words
A semiconductor laser device comprising an electrically semi-insulating semiconductor substrate, a first semiconductor layer of a first type conductivity formed on said semiconductor substrate, a second semiconductor layer of the first type conductivity formed on said first semiconductor layer and narrower in forbidden band-width than said first semiconductor layer, a third semiconductor of the first type conductivity formed on said second semiconductor layer and broader in forbidden band-width than said second semiconductor layer, a fourth semiconductor portion of a second type conductivity continuously formed in predetermined regions of said first, second and third semiconductor layers and extending into said semiconductor substrate, said fourth semiconductor portion forming pn junctions with said first, second and third semiconductor layers, the pn junction in said second semiconductor layer serving as a light emitting region, a first electrode disposed in ohmic contact with a semiconductor region having said first type conductivity and a second electrode disposed in ohmic contact with a semiconductor region having said second type conductivity.
Claim 3
Dependent Claim
26 words
A semiconductor laser device as claimed in claim 1 wherein said electrically semi-insulating semiconductor substrated is formed of high resistivity gallium arsenide (GaAs) doped with chromium.
Claim 4
Dependent Claim
29 words
A semiconductor laser device as claimed in claim 1 wherein said first type conductivity is of an n type and said second type conductivity is of a p type.
Claim 5
Dependent Claim
36 words
A semiconductor laser device as claimed in claim 1 wherein said first and third semiconductivity are formed of n type gallium-aluminum arsenide (GaAlAs) and said second semiconductor layer is formed of n type gallium arsenide (GaAs).
Claim 6
Dependent Claim
41 words
A semiconductor laser device as claimed in claim 4 wherein said fourth semiconductor portion is formed by diffusing a p type conductivity imparting impurity into said predetermined region of said first, second and third semiconductor layers to reach said semiconductor substrate.
Claim 7
Dependent Claim
19 words
A semiconductor laser device as claimed in claim 5 wherein said p type conductivity imparting impurity is zinc (Zn).
Claim 8
Dependent Claim
23 words
A semiconductor laser device as claimed in claim 1 wherein said pn junctions include an exposed end covered with an electrically insulating film.
Claim 9
Dependent Claim
30 words
A semiconductor laser device as claimed in claim 7 wherein said electrically insulating film is formed of a compound selected from the group consisting of silicon dioxide and silicon nitride.
Claim 10
Dependent Claim
50 words
A semiconductor laser device as claimed in claim 1 wherein said first electrode is disposed in ohmic contact with said fourth semiconductor portion and said second electrode is disposed in ohmic contact with a portion of said third semiconductor layer in which said fourth semiconductor portion is not formed therein.
Claim 11
Dependent Claim
31 words
A semiconductor laser device as claimed in claim 8 wherein said first and second electrode are disposed in ohmic contact with respective gallium arsenide layers formed on said third semiconductor layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-01-07 | 1983-07-09 | 1984-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-01-07 | 1987-07-09 | 1988-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-01-07 | 1991-07-09 | 1992-01-08 | $7700.00 | Window Closed / Lapsed |