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US4174222A Expired / Lapsed US ⏱️ 0.0 years remaining

Positive-type O-quinone diazide containing photoresist compositions

Assignee: Tokyo Ohka Kogyo Co Ltd
•
Filing: 1978-02-27
•
Granted: 1979-11-13
•
Expires: 1998-02-27
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Abstract

Abstract A gallic acid alkyl ester or a gallic acid aryl ester is reacted in an inert solvent with 3 equivalents of naphthoquinone-(1,2)-diazido-(2)-sulfonyl chloride in the presence of an alkali to effect sulfonylation of 3 hydroxyl groups in the gallic acid moiety whereby a photodecomposable naphthoquinone-(1,2)-diazido-(2)-sulfonic acid ester is obtained. The new naphthoquinonediazido derivative thus obtained is mixed with an alkali-soluble phenol resin such as m-cresol novolac resin or phenol novolac resin to prepare a positive-type photoresist composition having high sensitivity and high resolving power as well as excellent dimensional accuracy and etching-resistance. In addition, this composition forms a good photosensitive film and can be a good ink receptor.

Inventors

  • 👤 Takashi Komine
  • 👤 Akira Yokota
  • 👤 Hisashi Nakane
  • 👤 Shingo Asaumi
  • 👤 Noboru Okazaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 11:11
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 70 words
A positive-type photoresist composition which comprises as essential ingredients an alkali-soluble phenolic novolac resin in an amount sufficient to give etching resistance to the composition and at least one naphthoquinonediazido derivative of the general formula ##STR3## in an amount sufficient to make the composition photodecomposable wherein R stands for a substituent selected from the group consisting of alkyl, aryl and nucleus-substituted aryl groups and X stands for a naphthoquinone-(1,2)-diazido-(2)-sulfonyl residue.
Claim 2
Dependent Claim 70 words
A positive-type photoresist composition which comprises as essential ingredients an alkali-soluble phenolic novolac resin in an amount sufficient to give etching resistance to the composition and at least one naphthoquinonediazido derivative of the general formula ##STR3## in an amount sufficient to make the composition photodecomposable wherein R stands for a substituent selected from the group consisting of alkyl, aryl and nucleus-substituted aryl groups and X stands for a naphthoquinone-(1,2)-diazido-(2)-sulfonyl residue.
Claim 3
Dependent Claim 39 words
The positive-type photoresist composition as claimed in claim 1 wherein R in the general formula is selected from the group consisting of alkyl groups having 2-5 carbon atoms, phenyl group, nucleus-substituted phenyl groups, nephthyl group and nucleus-substituted naphthyl groups.
Claim 4
Dependent Claim 40 words
The positive-type photoresist composition as claimed in claim 2 wherein R in the general formula is selected from the group consisting of ethyl, propyl, n-butyl, isobutyl, amyl, isoamyl, phenyl, naphthyl, tolyl, xylyl, α-methylnaphthyl, methoxyphenyl, ethoxyphenyl, acetylphenyl, hydroxyphenyl and hydroxynaphthyl groups.
Claim 5
Dependent Claim 19 words
The positive-type photoresist composition as claimed in claim 1 wherein the naphthoquinone-(1,2)-diazido-(2)-sulfonyl residue is naphthoquinone-(1,2)-diazido-(2)-4-sulfonyl residue or naphthoquinone-(1,2)-diazido-(1,2)-5-sulfonyl residue.
Claim 6
Dependent Claim 25 words
The positive-type photoresist composition as claimed in claim 1 wherein the alkali-soluble phenolic novolac resin is a m-cresol novolac resin or a phenol novolac resin.
Claim 7
Dependent Claim 33 words
The positive-type photoresist composition as claimed in claim 1 wherein the ratio by weight of the alkali-soluble phenolic novolac resin to the naphthoquinonediazido derivative is in the range from about 1:1 to 10:1.
Claim 8
Dependent Claim 18 words
The positive-type photoresist composition as claimed in claim 1 which additionally comprises a dye or a thermal stabilizer.
Claim 9
Dependent Claim 12 words
The composition as set forth in claim 1 wherein X is naphthoquinone-(1,2)-diazido-(2)-5-sulfonyl.

References Cited (Backward Citations)

US3106465A Cited
US3061430A Cited
US3130047A Cited
US3130048A Cited
GB942564A Cited
US3148983A Cited
US3201239A Cited
US3402044A Cited
GB1053866A Cited
US3635709A Cited
US3666473A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-11-12 1983-05-14 1983-11-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-11-12 1987-05-14 1987-11-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-11-12 1991-05-14 1991-11-13 $7700.00 Window Closed / Lapsed

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