Patent US3072437A successfully refreshed from Google Patents.
Patent US4164751A successfully refreshed from Google Patents.
US4164751A
Expired / Lapsed
US
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High capacity dynamic ram cell
Assignee: Texas Instruments Inc
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Filing: 1976-11-10
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Granted: 1979-08-14
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Expires: 1996-11-10
Abstract
Abstract Disclosed is a memory system capable of being integrated into a semiconductor substrate and having an array of Hi-C memory cells. The Hi-C cells are selectively addressable by row and column lines. Each cell of the array is comprised of a transistor having a source coupled to a bit line, a gate coupled to a word line, and a drain coupled to a node N. Node N is coupled in parallel to a dielectric capacitor and to a depletion capacitor. The dielectric capacitor and the depletion capacitor are constructed to have substantially the same charge capacity.
Inventors
- 👤 Aloysious F. Tasch, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:22
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/35; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B12/00; H10B12/30
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
314 words
A memory system of the type having an array of memory cells selectively addressable by row and column lines, each of said memory cells of said array comprising: a semiconductor substrate of one conductivity type material common to said cells, said substrate having a first surface; a region of the other conductivity type in said substrate adjacent to said first surface for forming a bit line and a transistor source; a storage region lying in said substrate adjacent to said first surface and spaced from said other conductivity type region, said storage region forming a transistor drain and including a shallow implant of the other conductivity type impurity lying in said substrate near said first surface, and a deep implant of said one conductivity type impurity having an impurity dopant concentration that is greater than the dopant concentration of said one conductivity type material of said substrate; a transfer region in said substrate adjacent to said first surface and disposed between said other conductivity type region and said storage region, said transfer region being defined by a zone of said one conductivity type material having an impurity dopant concentration greater than the dopant concentration of said one conductivity type material of said substrate; said other conductivity type region lying within said zone of said one conductivity type material; a storage gate overlying said storage region in spaced alignment therewith; a transfer gate partially overlying said storage gate and in spaced relation thereto, said transfer gate being separately operable from said storage gate and including a transfer gate portion overlying said transfer region in spaced alignment therewith; and a body of insulating material disposed on said first surface of said substrate and interposed between said storage region and said storage gate, and said transfer region and said transfer gate, respectively, and said insulating body also being interposed between said storage gate and said transfer gate.
Claim 2
Dependent Claim
314 words
A memory system of the type having an array of memory cells selectively addressable by row and column lines, each of said memory cells of said array comprising: a semiconductor substrate of one conductivity type material common to said cells, said substrate having a first surface; a region of the other conductivity type in said substrate adjacent to said first surface for forming a bit line and a transistor source; a storage region lying in said substrate adjacent to said first surface and spaced from said other conductivity type region, said storage region forming a transistor drain and including a shallow implant of the other conductivity type impurity lying in said substrate near said first surface, and a deep implant of said one conductivity type impurity having an impurity dopant concentration that is greater than the dopant concentration of said one conductivity type material of said substrate; a transfer region in said substrate adjacent to said first surface and disposed between said other conductivity type region and said storage region, said transfer region being defined by a zone of said one conductivity type material having an impurity dopant concentration greater than the dopant concentration of said one conductivity type material of said substrate; said other conductivity type region lying within said zone of said one conductivity type material; a storage gate overlying said storage region in spaced alignment therewith; a transfer gate partially overlying said storage gate and in spaced relation thereto, said transfer gate being separately operable from said storage gate and including a transfer gate portion overlying said transfer region in spaced alignment therewith; and a body of insulating material disposed on said first surface of said substrate and interposed between said storage region and said storage gate, and said transfer region and said transfer gate, respectively, and said insulating body also being interposed between said storage gate and said transfer gate.
Claim 3
Dependent Claim
292 words
A memory cell for a semiconductor memory device, comprising: a semiconductor substrate of one conductivity type material, said substrate having a first surface; a region of the other conductivity type in said substrate adjacent to said first surface for forming both a bit line and a transistor source; a storage region lying in said substrate adjacent to said first surface and spaced from said other conductivity type region, said storage region forming a transistor drain and including a shallow implant of the other conductivity type impurity lying in said substrate near said first surface, and a deep implant of said one conductivity type impurity having an impurity dopant concentration that is greater than the dopant concentration of said one conductivity type material of said substrate; a transfer region in said substrate adjacent to said first surface and disposed between said other conductivity type region and said storage region, said transfer region being defined by a zone of said one conductivity type material having an impurity dopant concentration greater than the dopant concentration of said one conductivity type material of said substrate; said other conductivity type region lying within said zone of said one conductivity type material; a storage gate overlying said storage region in spaced alignment therewith; a transfer gate partially overlying said storage gate and in spaced relation thereto, said transfer gate being separately operable from said storage gate and including a transfer gate portion overlying said transfer region in spaced alignment therewith; and a body of insulating material disposed on said first surface of said substrate and interposed between said storage region and said storage gate, and said transfer region and said transfer gate, respectively, and said insulating body also being interposed between said storage gate and said transfer gate.
Claim 4
Dependent Claim
292 words
A memory cell for a semiconductor memory device, comprising: a semiconductor substrate of one conductivity type material, said substrate having a first surface; a region of the other conductivity type in said substrate adjacent to said first surface for forming both a bit line and a transistor source; a storage region lying in said substrate adjacent to said first surface and spaced from said other conductivity type region, said storage region forming a transistor drain and including a shallow implant of the other conductivity type impurity lying in said substrate near said first surface, and a deep implant of said one conductivity type impurity having an impurity dopant concentration that is greater than the dopant concentration of said one conductivity type material of said substrate; a transfer region in said substrate adjacent to said first surface and disposed between said other conductivity type region and said storage region, said transfer region being defined by a zone of said one conductivity type material having an impurity dopant concentration greater than the dopant concentration of said one conductivity type material of said substrate; said other conductivity type region lying within said zone of said one conductivity type material; a storage gate overlying said storage region in spaced alignment therewith; a transfer gate partially overlying said storage gate and in spaced relation thereto, said transfer gate being separately operable from said storage gate and including a transfer gate portion overlying said transfer region in spaced alignment therewith; and a body of insulating material disposed on said first surface of said substrate and interposed between said storage region and said storage gate, and said transfer region and said transfer gate, respectively, and said insulating body also being interposed between said storage gate and said transfer gate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-08-13 | 1983-02-12 | 1983-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-08-13 | 1987-02-12 | 1987-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-08-13 | 1991-02-12 | 1991-08-14 | $7700.00 | Window Closed / Lapsed |