Patent US4152715A successfully refreshed from Google Patents.
US4152715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon base CCD-bipolar transistor compatible methods and products
Assignee: United States Department of the Army
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Filing: 1977-11-28
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Granted: 1979-05-01
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Expires: 1997-11-28
Abstract
Abstract CCDs and bipolar transistors are formed together on a silicon chip. For n channel CCDs and npn transistors, only a single extra diffusion is necessary in addition to the diffusions used for the CCDs alone. This step is diffusion of n + collector wells, and is performed before CCD channel stop-transistor base diffusion. For p channel CCDs and pnp transistors, two extra diffusions are necessary and are: diffusion of a p collector wells, and diffusion of n + base contracts; the extra diffusions may both be performed before CCD channel stop-transistor base diffusion, or the n + base contact diffusion may be performed thereafter.
Inventors
- 👤 Chi-Shin Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:43
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/157; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/0198; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
196 words
A method of treating a p-type silicon chip to produce on said chip at least a charge-coupled device (CCD) and a transistor, the method including the steps of: forming a SiO 2 layer on said chip; applying a first perforated mask to said chip and etching through said first mask to form a SiO 2 mask; stripping said first mask; n+ doping said chip through the perforation of said SiO 2 mask to form a transistor collector well; applying a second perforated mask; p doping said chip through the perforations of said second mask to form a p-type channel stop for said CCD and a base region for said transistor; stripping said second mask; applying a third perforated mask; n+ doping said chip through the perforations of said third mask to form simultaneously an n-type CCD and a separate emitter region for said transistor; stripping said third mask; stripping said SiO 2 mask by etching; applying a fourth perforated mask on said chip; implanting dopant adjacent said n-type CCD for a CCD threshold shift region; removing said fourth mask; wherein the perforations of the various masks expose various regions on said chip during the various steps.
Claim 2
Independent Claim
196 words
A method of treating a p-type silicon chip to produce on said chip at least a charge-coupled device (CCD) and a transistor, the method including the steps of: forming a SiO 2 layer on said chip; applying a first perforated mask to said chip and etching through said first mask to form a SiO 2 mask; stripping said first mask; n+ doping said chip through the perforation of said SiO 2 mask to form a transistor collector well; applying a second perforated mask; p doping said chip through the perforations of said second mask to form a p-type channel stop for said CCD and a base region for said transistor; stripping said second mask; applying a third perforated mask; n+ doping said chip through the perforations of said third mask to form simultaneously an n-type CCD and a separate emitter region for said transistor; stripping said third mask; stripping said SiO 2 mask by etching; applying a fourth perforated mask on said chip; implanting dopant adjacent said n-type CCD for a CCD threshold shift region; removing said fourth mask; wherein the perforations of the various masks expose various regions on said chip during the various steps.
Claim 3
Dependent Claim
38 words
The method as defined in claim 1 wherein the regions on said chip is exposed by the perforations of said second mask are within the regions on said chip as exposed by the perforation of said first mask.
Claim 4
Dependent Claim
37 words
The method as defined in claim 2 wherein the regions on said chip as exposed by the third mask are within but of less area than the regions as exposed by the perforations of said second mask.
Claim 5
Dependent Claim
20 words
The method as defined in claim 3 wherein the p doping penetrates deeper into said chip than said n+ doping.
Claim 6
Dependent Claim
9 words
The circuit made by the process of claim 1.
Claim 7
Independent Claim
233 words
A method of treating an n-type silicon chip to produce on said chip at least a charge-coupled device (CCD) and a transistor, the method including the steps of: forming a SiO 2 layer on said chip; applying a first perforated mask to said chip and etching through said first mask to form a SiO 2 mask; stripping said first mask; p doping said chip through the perforation of said mask to form a transistor collector well; applying a second perforated mask to said chip; n+ doping said chip through the perforations of said second mask to form a base contact region for said transistor; stripping said second mask; applying a third perforated mask to said chip; n doping said chip through the perforations of said third mask to form simultaneously an n-type channel stop for said CCD and a separate base region for said transistor; stripping said third mask; applying a fourth perforated mask to said chip; p+ doping said chip through said perforations of said forth mask to form both a p channel CCD and an emitter region for said transistor; stripping said fourth mask; stripping said SiO 2 mask by etching; applying a fifth perforated mask on said pattern and said chip; implanting dopant adjacent said p channel CCD for a CCD threshold shift region; removing said fifth mask; wherein the perforations of said masks expose various regions on said chip.
Claim 8
Independent Claim
233 words
A method of treating an n-type silicon chip to produce on said chip at least a charge-coupled device (CCD) and a transistor, the method including the steps of: forming a SiO 2 layer on said chip; applying a first perforated mask to said chip and etching through said first mask to form a SiO 2 mask; stripping said first mask; p doping said chip through the perforation of said mask to form a transistor collector well; applying a second perforated mask to said chip; n+ doping said chip through the perforations of said second mask to form a base contact region for said transistor; stripping said second mask; applying a third perforated mask to said chip; n doping said chip through the perforations of said third mask to form simultaneously an n-type channel stop for said CCD and a separate base region for said transistor; stripping said third mask; applying a fourth perforated mask to said chip; p+ doping said chip through said perforations of said forth mask to form both a p channel CCD and an emitter region for said transistor; stripping said fourth mask; stripping said SiO 2 mask by etching; applying a fifth perforated mask on said pattern and said chip; implanting dopant adjacent said p channel CCD for a CCD threshold shift region; removing said fifth mask; wherein the perforations of said masks expose various regions on said chip.
Claim 9
Dependent Claim
38 words
The method as defined in claim 6 wherein the regions on said chip is exposed by the perforations of said second mask are within the regions on said chip as exposed by the perforation of said first mask.
Claim 10
Dependent Claim
35 words
The method as defined in claim 7 wherein the region of said chip as exposed by said third mask include a region enclosing but of less area than a region exposed by said second mask.
Claim 11
Dependent Claim
37 words
The method as defined in claim 8 wherein the regions of said chip as exposed by said fourth mask are within but of less area then the regions of said chip as exposed by said third mask.
Claim 12
Dependent Claim
9 words
The circuit made by the process of claim 6.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-30 | 1982-10-30 | 1983-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-30 | 1986-10-30 | 1987-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-30 | 1990-10-30 | 1991-05-01 | $7700.00 | Window Closed / Lapsed |