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US4151546A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device having electrode-lead layer units of differing thicknesses

Assignee: Toshiba Corp
•
Filing: 1978-08-28
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Granted: 1979-04-24
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Expires: 1998-08-28
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Abstract

Abstract A semiconductor device comprising electrode-lead layer units wherein at least one of said electrode-lead layer units or at least one portion of same of said units occupying certain positions in the semiconductor device is made thicker than the remainder, thereby enabling circuit elements to be integrated with a high density, namely, rendering the entire semiconductor device compact.

Inventors

  • 👤 Kenji Kawagai
  • 👤 Shigeki Yoshida
  • 👤 Yasuo Nakada

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 21:35
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10W20/435

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 75 words
In a semiconductor device comprising a semiconductor substrate having semiconductor regions, an insulation layer, and electrode-lead layer units including electrode portions, lead pad portions and lead layer portions between and interconnecting said electrode portions and said lead pad portions; the improvement wherein at least one portion of at least one electrode-lead layer unit comprises a first conductive layer and a second conductive layer directly laminated on the whole outer surface of said first conductive layer.
Claim 2
Dependent Claim 75 words
In a semiconductor device comprising a semiconductor substrate having semiconductor regions, an insulation layer, and electrode-lead layer units including electrode portions, lead pad portions and lead layer portions between and interconnecting said electrode portions and said lead pad portions; the improvement wherein at least one portion of at least one electrode-lead layer unit comprises a first conductive layer and a second conductive layer directly laminated on the whole outer surface of said first conductive layer.
Claim 3
Dependent Claim 30 words
The semiconductor device according to claim 1, wherein the first and second conductive layers are made of one material selected from the group consisting of aluminum, molybdenum and polycrystalline silicon.
Claim 4
Dependent Claim 40 words
The semiconductor device according to claim 1, which comprises a metal oxide semiconductor field effect transistor in which the source electrode portion, drain electrode portion and lead layer portions connected thereto are each formed of first and second conductive layers.
Claim 5
Dependent Claim 18 words
The semiconductor device according to claim 2, wherein the first and second conductive layers are made of aluminum.
Claim 6
Dependent Claim 70 words
In a semiconductor device comprising a semiconductor substrate having semiconductor regions, an insulation layer, and electrode-lead layer units including electrode portions, lead pad portions and lead layer portions between and interconnecting said electrode portions and said lead pad portions; the improvement wherein at least one lead pad portion comprises a first conductive layer and a second conductive layer directly laminated on the whole outer surface of said first conductive layer.
Claim 7
Dependent Claim 70 words
In a semiconductor device comprising a semiconductor substrate having semiconductor regions, an insulation layer, and electrode-lead layer units including electrode portions, lead pad portions and lead layer portions between and interconnecting said electrode portions and said lead pad portions; the improvement wherein at least one lead pad portion comprises a first conductive layer and a second conductive layer directly laminated on the whole outer surface of said first conductive layer.

References Cited (Backward Citations)

US3641661A Cited
US3771026A Cited
US3838442A Cited
US3801880A Cited
US3795974A Cited
US4017886A Cited
US3946426A Cited
US3932880A Cited
US3993515A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-04-23 1982-10-23 1983-04-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-04-23 1986-10-23 1987-04-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-04-23 1990-10-23 1991-04-24 $7700.00 Window Closed / Lapsed

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