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US4151538A
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Nonvolatile semiconductive memory device and method of its manufacture
Assignee: RCA Corp
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Filing: 1978-01-30
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Granted: 1979-04-24
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Expires: 1998-01-30
Abstract
Abstract An MNOS nonvolatile semiconductive memory device of the type which has a thick gate insulating layer overlapping the source and drain regions and a thin gate insulator layer in the memory portion of the device includes a region of relatively high concentration of impurities of the same type conductivity as the substrate in the portion of the channel which is beneath the thin gate insulating layer. This increases the values of both the low threshold and the high threshold states of the memory portion of the devide, so as to increase the threshold voltage window of the device. The region is formed by ion implantation in such a manner that the thin gate insulator layer is also doped resulting in a device having improved stability.
Inventors
- 👤 Murray A. Polinsky
- 👤 William N. Lewis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:55
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/60; H10D30/69; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307; H10P30/21; H10P30/212
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
179 words
An improved nonvolatile semiconductive memory device formed in a body of semiconductive material of one type conductivity having a surface with spaced source and drain regions of opposite type conductivity in said body adjacent to said surface and defining the ends of a channel region of controllable conductivity, a first insulating layer on said surface over said channel region, said first insulating layer having a thin, charge tunnelling portion over part of said channel region and a thick non-tunnellng portion over the rest of the said channel region, a second insulating layer on said first insulating layer, and a gate electrode layer on said second insulating layer, wherein the improvement comrises: at least a portion of said channel region beneath said thin portion of said first insulating layer having a concentration of conductivity modifiers of said one type greater than the concentration of conductivity modifiers in the portion of said channel region beneath said thick portion of said first insulating layer, and said thin portion of said first insulating layer containing conductivity modifiers of said one type embedded therein.
Claim 2
Dependent Claim
179 words
An improved nonvolatile semiconductive memory device formed in a body of semiconductive material of one type conductivity having a surface with spaced source and drain regions of opposite type conductivity in said body adjacent to said surface and defining the ends of a channel region of controllable conductivity, a first insulating layer on said surface over said channel region, said first insulating layer having a thin, charge tunnelling portion over part of said channel region and a thick non-tunnellng portion over the rest of the said channel region, a second insulating layer on said first insulating layer, and a gate electrode layer on said second insulating layer, wherein the improvement comrises: at least a portion of said channel region beneath said thin portion of said first insulating layer having a concentration of conductivity modifiers of said one type greater than the concentration of conductivity modifiers in the portion of said channel region beneath said thick portion of said first insulating layer, and said thin portion of said first insulating layer containing conductivity modifiers of said one type embedded therein.
Claim 3
Dependent Claim
41 words
The device defined in claim 1 wherein said thin portion of said first insulating layer is disposed centrally over said channel region so that said part of said channel region has ends spaced from each of said source and drain regions.
Claim 4
Dependent Claim
51 words
The device defined in claim 1 wherein said semiconductive material is silicon, said thin portion of said first insulating layer is of silicon dioxide having a thickness of about 20 A and said thick portion of said first insulating layer is of silicon dioxide having a thickness of about 500 A.
Claim 5
Dependent Claim
15 words
The device defined in claim 3 wherein said second insulating layer is of silicon nitride.
Claim 6
Dependent Claim
57 words
The device defined in claim 4 wherein said one type conductivity is N type, said source and drain regions are of P type conductivity and said conductivity modifiers in said portion of said channel region beneath said thin portion of said first insulating layer and in said thin portion of said first insulating layer are phosphorus atoms.
Claim 7
Independent Claim
125 words
A method of making an improved nonvolatile semiconductive memory device formed in a body of semiconductor material of one type conductivity having a surface with spaced source and drain regions of opposite type conductivity in said body adjacent to said surface and defining the ends of a channel region of controllable conductivity, a first insulating layer on said surface over said channel region, said first insulating layer having a thin, charge tunnelling portion over part of said channel region and a thick non-tunnelling portion over the rest of the said channel region, a second insulating layer on said first insulating layer and a gate electrode layer on said second insulating layer, and simultaneously introducing conductivity modifiers into said thin portion of said first insulating layer.
Claim 8
Independent Claim
125 words
A method of making an improved nonvolatile semiconductive memory device formed in a body of semiconductor material of one type conductivity having a surface with spaced source and drain regions of opposite type conductivity in said body adjacent to said surface and defining the ends of a channel region of controllable conductivity, a first insulating layer on said surface over said channel region, said first insulating layer having a thin, charge tunnelling portion over part of said channel region and a thick non-tunnelling portion over the rest of the said channel region, a second insulating layer on said first insulating layer and a gate electrode layer on said second insulating layer, and simultaneously introducing conductivity modifiers into said thin portion of said first insulating layer.
Claim 9
Dependent Claim
18 words
The method defined in claim 6 wherein said conductivity modifiers are introduced by the process of ion implantation.
Claim 10
Dependent Claim
66 words
The method defined in claim 7 wherein said semiconductor material is N type silicon, said thin portion of said first insulating layer is silicon dioxide having a thickness of about 20 A, said thick portion of said first insulating layer is silicon dioxide having a thickness of abaout 500 A, said second insulating layer is silicon nitride, and said ion implanted conductivity modifiers are phosphorus atoms.
Claim 11
Dependent Claim
22 words
The method defined in claim 8 in which said introducing step is performed subsequent to the formation of said silicon nitride layer.
Claim 12
Dependent Claim
39 words
The method defined in claim 9 wherein the energy of said ion implantation introducing step is such that phosphorus atoms are implanted in said thin portion of said first insulating layer and into said portion of said channel region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-23 | 1982-10-23 | 1983-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-23 | 1986-10-23 | 1987-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-23 | 1990-10-23 | 1991-04-24 | $7700.00 | Window Closed / Lapsed |