Patent US4143455A successfully refreshed from Google Patents.
US4143455A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a semiconductor component
Assignee: Siemens AG
•
Filing: 1978-07-03
•
Granted: 1979-03-13
•
Expires: 1998-07-03
Abstract
Abstract Semiconductor components, as for LSI-circuits are produced in such a manner that epitaxial layers as well as buried layers are dispensed with while an increased manufacturing yield and an increased structural packing density is achieved via an oxide insulating technique. The process involves applying and structuring a first insulating layer, such as composed of Si 3 N 4 , onto a semiconductor substrate having a first zone of one conductivity type therein, etching insulating grooves into the substrate areas not covered with the first insulating layer and filling such grooves with a second insulating layer, such as composed of SiO 2 , which is thicker than the first insulating layer, and then emplacing the various semiconductor structures at select surface areas between spaced-apart areas of the second insulating layer so as to complete the semiconductor structure.
Inventors
- 👤 Ulrich Schwabe
- 👤 Ronald Rathbone
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:22
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/10; H10W10/13; H10P; H10P14/00; H10P14/60; H10P14/61; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/17; H10P32/171; H10P50/00; H10P50/69; H10P50/691; H10W10/01; H10W10/011; H10W10/012; H10W10/0128; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
182 words
A process for producing a semiconductor component consisting essentially of the sequential steps of: providing a semiconductor substrate of one conductivity type; forming a first zone onto a first surface of said substrate, said first zone having a conductivity type different from that of said substrate; applying a relatively thin layer of silicon nitride onto said first zone and etching a desired pattern thereon so that some areas of said first zone are uncovered; etching at least the uncovered areas of the first zone to a depth sufficient to penetrate said first zone and form a second surface within said substrate below said first surface of the substrate and to form adjacent first zone side walls; substantially simultaneously forming a relatively thick layer of silicon dioxide on at least the second surface of the substrate and on first zone side walls and post-diffusing said first zone so as to enlarge said first zone; forming other space-apart zones within said first zone, said other zones having a conductivity type different from that of said first zone; and providing electrodes for said spaced-apart zones.
Claim 2
Dependent Claim
182 words
A process for producing a semiconductor component consisting essentially of the sequential steps of: providing a semiconductor substrate of one conductivity type; forming a first zone onto a first surface of said substrate, said first zone having a conductivity type different from that of said substrate; applying a relatively thin layer of silicon nitride onto said first zone and etching a desired pattern thereon so that some areas of said first zone are uncovered; etching at least the uncovered areas of the first zone to a depth sufficient to penetrate said first zone and form a second surface within said substrate below said first surface of the substrate and to form adjacent first zone side walls; substantially simultaneously forming a relatively thick layer of silicon dioxide on at least the second surface of the substrate and on first zone side walls and post-diffusing said first zone so as to enlarge said first zone; forming other space-apart zones within said first zone, said other zones having a conductivity type different from that of said first zone; and providing electrodes for said spaced-apart zones.
Claim 3
Dependent Claim
76 words
A process as defined in claim 1 wherein after the silicon dioxide layer is formed, a select area of the silicon nitride layer is removed, a second zone of a conductivity type different from that of the first zone is formed within the so-uncovered area above said first zone and a zone of a conductivity type different from that of said first and second zone is formed adjacent said second zone and above said first zone.
Claim 4
Dependent Claim
16 words
In a process as defined in claim 1 wherein said first zone is formed by diffusion.
Claim 5
Dependent Claim
17 words
In a process as defined in claim 1 wherein said first zone is formed by ion implantation.
Claim 6
Dependent Claim
31 words
In a process as defined in claim 1 wherein the select areas of the substrate surface free of the first insulating layer are etched to a depth of about 0.8 μm.
Claim 7
Dependent Claim
25 words
In a process as defined in claim 5 wherein the second insulating layer is formed so as to have a thickness of about 1.5 μm.
Claim 8
Dependent Claim
25 words
In a process as defined in claim 6 wherein said first zone is subjected to a post-diffusion during the formation of the second insulating layer.
Claim 9
Dependent Claim
16 words
In a process as defined in claim 7 wherein said other zones are formed by diffusion.
Claim 10
Dependent Claim
21 words
In a process as defined in claim 7 wherein at least some of said other zones are formed by ion implantation.
References Cited (Backward Citations)
US3909318A
Cited
US4008107A
Cited
US3933540A
Cited
US3977925A
Cited
US3963524A
Cited
US4014714A
Cited
US3962717A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-12 | 1982-09-11 | 1983-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-12 | 1986-09-11 | 1987-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-12 | 1990-09-11 | 1991-03-13 | $7700.00 | Window Closed / Lapsed |