Patent US4143383A successfully refreshed from Google Patents.
US4143383A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Controllable impedance attenuator having all connection contacts on one side
Assignee: US Philips Corp
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Filing: 1976-09-23
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Granted: 1979-03-06
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Expires: 1996-09-23
Abstract
Abstract A semiconductor device having two PIN-diodes arranged in series and in opposition, in which the semiconductor body comprises two surface zones of a first conductivity type which extend in a high-ohmic surface layer, said surface layer separating the surface zones from one another and from a low-ohmic region of the second conductivity type. The surface zones and the low-ohmic region are contacted at the same surface of the semiconductor body, preferably by means of beam leads. The device is particularly suitable for high frequency applications and may form part of an integrated circuit.
Inventors
- 👤 Karel P. Van Rooij
- 👤 Johannes T. Schrama
- 👤 Adrianus W. Ludikhuize
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:00
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/74; H03H; H03H7/00; H03H7/24; H03H7/25; H03H7/253; H03H7/255; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D99/00; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W20/00; H10W20/40; H10W72/00; H10W72/60; H10W10/021; H10W10/20
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
180 words
A controllable impedance attenuator, comprising: a layer of high-ohmic semiconductor material having a substantially flat major surface; first and second mutually spaced low-ohmic surface zones of one conductivity type nested in said layer and adjoining said major surface; a signal input connection contact attached at said major surface to said first surface zone; a signal output connection contact attached at said major surface to said second surface zone; a low-ohmic region of the opposite conductivity type nested in said layer, adjoining said major surface and spaced from both said first and said second surface zones; a signal current path extending within said layer from said first to said second surface zones, said signal current path substantially bypassing said region of opposite conductivity type but being adjacent thereto, said signal current path and first and second surface zones forming two diodes connected in series and opposition between said input and output contacts; and an electrically conductive connection contact attached at said major surface to said region of opposite conductivity type for controlling the impedance of said signal current path adjacent thereto.
Claim 2
Dependent Claim
180 words
A controllable impedance attenuator, comprising: a layer of high-ohmic semiconductor material having a substantially flat major surface; first and second mutually spaced low-ohmic surface zones of one conductivity type nested in said layer and adjoining said major surface; a signal input connection contact attached at said major surface to said first surface zone; a signal output connection contact attached at said major surface to said second surface zone; a low-ohmic region of the opposite conductivity type nested in said layer, adjoining said major surface and spaced from both said first and said second surface zones; a signal current path extending within said layer from said first to said second surface zones, said signal current path substantially bypassing said region of opposite conductivity type but being adjacent thereto, said signal current path and first and second surface zones forming two diodes connected in series and opposition between said input and output contacts; and an electrically conductive connection contact attached at said major surface to said region of opposite conductivity type for controlling the impedance of said signal current path adjacent thereto.
Claim 3
Dependent Claim
37 words
A controllable impedance attenuator as defined in claim 1 wherein said layer extends from said major surface to an oppositely located surface which is parallel to said major surface and is free of any electrical connection contact.
Claim 4
Dependent Claim
22 words
A controllable impedance attenuator as defined in claim 1 wherein the resistivity of said high-ohmic layer is greater than 50 Ω cm.
Claim 5
Dependent Claim
35 words
A controllable impedance attenuator as defined in claim 1 wherein said surface zones are spaced by a portion of said high-ohmic layer and said region of opposite conductivity type is totally outside of said portion.
Claim 6
Dependent Claim
28 words
A controllable impedance attenuator as defined in claim 4 wherein said region of opposite conductivity type is a surface zone enclosing said surface zones of one conductivity type.
Claim 7
Dependent Claim
27 words
A controllable impedance attenuator as defined in claim 5 wherein said surface zones of one conductivity type are semicircular with the straight part thereof facing each other.
Claim 8
Dependent Claim
33 words
A controllable impedance attenuator as defined in claim 5 wherein the smallest distance between said surface zones is less than the smallest distance between said region of opposite conductivity and said surface zones.
Claim 9
Dependent Claim
29 words
A controllable impedance attenuator as defined in claim 1 wherein said signal input contact, said signal output contact and said electrically conductive connection contact each comprise a beam lead.
Claim 10
Dependent Claim
206 words
A controllable impedance attenuator, comprising: a layer of high-ohmic semiconductor material having a substantially flat major surface; first and second mutually spaced low-ohmic surface zones of one conductivity type nested in said layer and adjoining said major surface; a signal input connection contact attached at said major surface to said first surface zone; a signal output connection contact attached at said major surface to said second surface zone; a low-ohmic region of the opposite conductivity type nested in said layer, adjoining said major surface and spaced from both said first and said second surface zones; a signal current path extending within said layer from said first to said second surface zones, said signal current path substantially bypassing said region of opposite conductivity type but being adjacent thereto; and an electrically conductive connection contact attached at said major surface to said region of opposite conductivity type, said connection contact forming a common node for two diodes connected in series and opposition between said input and output contacts, said diodes comprising said first and second surface zones and said region of opposite conductivity type, said common node providing electrical access to said region of opposite conductivity type for controlling the impedance of said signal current path adjacent thereto.
Claim 11
Dependent Claim
206 words
A controllable impedance attenuator, comprising: a layer of high-ohmic semiconductor material having a substantially flat major surface; first and second mutually spaced low-ohmic surface zones of one conductivity type nested in said layer and adjoining said major surface; a signal input connection contact attached at said major surface to said first surface zone; a signal output connection contact attached at said major surface to said second surface zone; a low-ohmic region of the opposite conductivity type nested in said layer, adjoining said major surface and spaced from both said first and said second surface zones; a signal current path extending within said layer from said first to said second surface zones, said signal current path substantially bypassing said region of opposite conductivity type but being adjacent thereto; and an electrically conductive connection contact attached at said major surface to said region of opposite conductivity type, said connection contact forming a common node for two diodes connected in series and opposition between said input and output contacts, said diodes comprising said first and second surface zones and said region of opposite conductivity type, said common node providing electrical access to said region of opposite conductivity type for controlling the impedance of said signal current path adjacent thereto.
Claim 12
Dependent Claim
37 words
A controllable impedance attenuator as defined in claim 9 wherein said layer extends from said major surface to an oppositely located surface which is parallel to said major surface and is free of any electrical connection contact.
Claim 13
Dependent Claim
35 words
A controllable impedance attentuator as defined in claim 9 wherein said surface zones are spaced by a portion of said high-ohmic layer and said region of opposite conductivity type is totally outside of said portion.
Claim 14
Dependent Claim
28 words
A controllable impedance attenuator as defined in claim 11 wherein said region of opposite conductivity type is a surface zone enclosing said surface zones of one conductivity type.
Claim 15
Dependent Claim
27 words
A controllable impedance attenuator as defined in claim 12 wherein said surface zones of one conductivity type are semicircular with the straight part thereof facing each other.
Claim 16
Dependent Claim
33 words
A controllable impedance attenuator as defined in claim 12 wherein the smallest distance between said surface zones is less than the smallest distance between said region of opposite conductivity and said surface zones.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-05 | 1982-09-04 | 1983-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-05 | 1986-09-04 | 1987-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-05 | 1990-09-04 | 1991-03-06 | $7700.00 | Window Closed / Lapsed |