US4142892A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of reducing the defect density in a positive-working photoresist layer using a salt of imidazolinium
Assignee: International Business Machines Corp
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Filing: 1977-05-20
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Granted: 1979-03-06
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Expires: 1997-05-20
Abstract
Abstract The density of defects formed during the exposure of a positive resist layer, due to the loss of photoresist in circular areas is reduced by the addition of an antistatic agent. The resist layer includes a phenol-formaldehyde resin and an o-diazoquinone photoactive compound and a suitable antistatic agent is a 2-alkyl-N-hydroxyethyl imidazolinium salt.
Inventors
- 👤 Gabor Paal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:20
CPC Classifications
G; G03; G03C; G03C1/00; G03C1/76; G03C1/85; A; A61; A61K; A61K8/00; A61K8/18; A61K8/72; A61K8/73; A61K8/736; A61Q; A61Q5/00; A61Q5/06; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/0226
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
118 words
In a process for forming a resist mask, in which a positive working photoresist layer comprising a phenol-formaldehyde novolak resin and a photosensitive o-diazoquinone sulfonic acid ester, is patternwise exposed to actinic radiation and the exposed portion is removed by an aqueous alkaline developer, the improvement which comprises: reducing the defect density caused by the loss of resist during exposure by including in said layer, prior to exposing the layer, an effective amount of a compound of the general formula: ##STR2## where R 1 is a hydroxyethyl group, R 2 is an alkyl group with 7 to 17 carbon atoms, and X - is an acid anion selected from the group consisting of acetate, oleate, stearate, and p-toluol-sulfonate.
Claim 2
Dependent Claim
118 words
In a process for forming a resist mask, in which a positive working photoresist layer comprising a phenol-formaldehyde novolak resin and a photosensitive o-diazoquinone sulfonic acid ester, is patternwise exposed to actinic radiation and the exposed portion is removed by an aqueous alkaline developer, the improvement which comprises: reducing the defect density caused by the loss of resist during exposure by including in said layer, prior to exposing the layer, an effective amount of a compound of the general formula: ##STR2## where R 1 is a hydroxyethyl group, R 2 is an alkyl group with 7 to 17 carbon atoms, and X - is an acid anion selected from the group consisting of acetate, oleate, stearate, and p-toluol-sulfonate.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein 2-alkyl-N-hydroxyethyl-imidazolinium acetate is added to the photoresist composition.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein the compound is added in a quantity of about 1% by weight of the photoresist composition.
References Cited (Backward Citations)
US2859112A
Cited
US2974042A
Cited
US3615532A
Cited
US3637644A
Cited
US3661582A
Cited
US3873316A
Cited
US3827908A
Cited
US4036644A
Cited
US3969118A
Cited
US4009033A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-03-05 | 1982-09-04 | 1983-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-03-05 | 1986-09-04 | 1987-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-03-05 | 1990-09-04 | 1991-03-06 | $7700.00 | Window Closed / Lapsed |