Semiconductor photodiodes

Claim 2

A semiconductor photodiode of the type including a junction between semiconductor regions containing impurities of different conductivity types and wherein photo-electric conversion is effected by utilizng the avalanche multiplication phenomena of carriers; one of said regions comprising first, second, third and fourth contiguous zones, said first zone being contiguous to said junction and containing a first conductivity type impurity at a relatively low concentration relative to said second zone, and said second zone being contiguous to said first zone on the side thereof opposite said junction and containing said first conductivity type impurity at a substantially higher concentration than the impurity concentration of said first zone, said third zone being contiguous to said second zone on the side thereof opposite said first zone and containing said first conductivity type impurity with the impurity concentration in said third zone being lower than the impurity concentration of said second zone at the intersection of the second and third zones and with the impurity concentration of said third zone gradually increasing to a substantially higher concentration in a direction away from the intersection of the second and third zones to thereby form an impurity concentration gradient, and said fourth zone being contiguous to said third zone on the side thereof opposite said second zone and containing said first conductivity type impurity at the substantially higher concentration.

Claim 3

The photodiode according to claim 1 wherein in the presence of a reverse bias field the first zone is connected to the third zone through the high impurity concentration second zone which serves to rapidly decrease the field intensity across the third zone and the impurity concentration gradient formed across the third zone creates a built-in-field for accelerating carriers formed in the fourth zone toward the junction for collection.

Claim 4

The photodiode according to claim 1 wherein said junction comprises a PN junction and said first type impurity is of the P type conductivity.

Claim 5

The photodiode according to claim 3 wherein the region on the side of said junction opposite said first zone is of the N conductivity type and surrounded by an annular guard ring.

Claim 6

The photodiode according to claim 1 which further comprises an intermediate zone containing an impurity at a constant and relatively low concentration disposed between said second and third zones.

Claim 7

The photodiode according to claim 5 wherein the impurity concentration varies stepwisely at the interface between said intermediate zone and said third zone.

Claim 8

The photodiode according to claim 5 wherein the impurity concentration is higher in said first zone than in said intermediate zone.

Claim 9

A semiconductor photodiode of the type including a junction between a metal layer and a semiconductor region to form a Schottky barrier and wherein the semiconductor region contains a plurality of contiguous zones of the same conductivity type impurity but differing concentrations and photo-electric conversion is effected by utilizing the avalanche multiplication phenomena of carriers; said semiconductor region comprising first, second, third and fourth zones, said first zone being contiguous to said junction and containing a first conductivity type impurity at a relatively low concentration relative to said second zone, said second zone being contiguous to said first zone on the side thereof opposite said junction and containing said first conductivity type impurity at a substantially higher concentration than the impurity concentration of said first zone, said third zone being contiguous to said second zone on the side thereof opposite said first zone and containing said first conductivity type impurity with the impurity concentration in said third zone being lower than the impurity concentration of said second zone at the intersection of the second and third zones and with the impurity concentration of said third zone gradually increasing to a substantially higher concentration in a direction away from the intersection of the second and third zones to thereby form an impurity concentration gradient, and said fourth zone being contiguous to said third zone on the side thereof opposite said second zone and containing said first conductivity type impurity at the substantially higher concentration.

Claim 10

A semiconductor photodiode of the type including a junction between a metal layer and a semiconductor region to form a Schottky barrier and wherein the semiconductor region contains a plurality of contiguous zones of the same conductivity type impurity but differing concentrations and photo-electric conversion is effected by utilizing the avalanche multiplication phenomena of carriers; said semiconductor region comprising first, second, third and fourth zones, said first zone being contiguous to said junction and containing a first conductivity type impurity at a relatively low concentration relative to said second zone, said second zone being contiguous to said first zone on the side thereof opposite said junction and containing said first conductivity type impurity at a substantially higher concentration than the impurity concentration of said first zone, said third zone being contiguous to said second zone on the side thereof opposite said first zone and containing said first conductivity type impurity with the impurity concentration in said third zone being lower than the impurity concentration of said second zone at the intersection of the second and third zones and with the impurity concentration of said third zone gradually increasing to a substantially higher concentration in a direction away from the intersection of the second and third zones to thereby form an impurity concentration gradient, and said fourth zone being contiguous to said third zone on the side thereof opposite said second zone and containing said first conductivity type impurity at the substantially higher concentration.

Claim 11

The photodiode according to claim 1 wherein the impurity concentration varies stepwisely at the interface between said third and fourth zones.