Low noise read-type diode

Claim 2

A Read-type diode comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; and means for determining the effective injection current of said diode such that the noise measure of said diode is less than 50 db.

Claim 3

The diode of claim 1 wherein said diode produces an output signal power of at least one watt upon application to said diode of a bias voltage of predetermined magnitude.

Claim 4

The diode of claim 2 wherein said metal contact comprises a metal having a work function lower than the work function of platinum.

Claim 5

The diode of claim 2 wherein said metal contact comprises tungsten.

Claim 6

A Read-type diode comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; and means for determining the effective injection current of said diode such that the ratio of average dc current to effective injection current is less than 100.

Claim 7

A Read-type diode comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; and means for determining the effective injection current of said diode such that the ratio of average dc current to effective injection current is less than 100.

Claim 8

The diode of claim 5 wherein said ratio of dc current to effective injection current is 30 or less.

Claim 9

The diode of claim 5 wherein said metal contact has a work function less than the work function of platinum or chromium.

Claim 10

The diode of claim 5 wherein said diode produces an output signal power of one watt or more upon application to said diode of a bias voltage sufficient to produce avalanching of charge carriers in the layer of semiconductor material adjacent said metal.

Claim 11

A Read-type diode comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; and means for determining the ratio of effective injection current to junction area of said diode to be at least 30 amps/cm 2 .

Claim 12

A Read-type diode comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; and means for determining the ratio of effective injection current to junction area of said diode to be at least 30 amps/cm 2 .

Claim 13

The diode of claim 9 wherein said diode has a noise measure less than 50 db.

Claim 14

The diode of claim 10 wherein said diode produces an output signal power of at least one watt upon application to said diode of a bias voltage of predetermined magnitude.

Claim 15

The diode of claim 9 wherein said metal contact comprises a metal having a work function lower than the work function of chromium or platinum.

Claim 16

An amplifying or oscillating circuit comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; a buffer region of semiconductor material adjacent said drift region, said buffer region being heavily doped; and heat sinking means thermally coupled to said buffer region, the amount of thermal coupling between said heat sinking means and said buffer region being such that the noise measure of said circuit is less than 50 db.

Claim 17

An amplifying or oscillating circuit comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; a buffer region of semiconductor material adjacent said drift region, said buffer region being heavily doped; and heat sinking means thermally coupled to said buffer region, the amount of thermal coupling between said heat sinking means and said buffer region being such that the noise measure of said circuit is less than 50 db.

Claim 18

The combination of claim 13 wherein said circuit produces an output power of at least one watt.

Claim 19

The combination of claim 14 further comprising: trap sites in said avalanche region for increasing the magnitude of the effective injection current of said diode.

Claim 20

The combination of claim 15 wherein said metal contact comprises a metal having a work function lower than the work function of platinum or chromium.

Claim 21

A Read-type diode having a noise measure less than 50 db comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; wherein said avalanche region comprises a plurality of trap means for increasing the magnitude of the effective injection current of said diode.

Claim 22

A Read-type diode having a noise measure less than 50 db comprising in combination: a Schottky-barrier forming metal contact; an avalanche region of semiconductor material adjacent said Schottky-barrier forming metal contact, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode; wherein said avalanche region comprises a plurality of trap means for increasing the magnitude of the effective injection current of said diode.

Claim 23

The combination of claim 17 wherein said trap means comprises lattice discontinuities in said avalanche region.

Claim 24

The combination of claim 17 wherein said trap means compromises atoms of doping material in said avalanche region, said doping material being different from the dopant used to dope said avalanche region to said doping density in said range of 5 × 10 15 to 1 × 10 17 /cm 3 .

Claim 25

A Read-type diode comprising in combination: a Schottky-barrier forming metal contact; a layer of oxide upon at least portions of said metal contact; an avalanche region of semiconductor material adjacent said layer of oxide, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; and a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode.

Claim 26

A Read-type diode comprising in combination: a Schottky-barrier forming metal contact; a layer of oxide upon at least portions of said metal contact; an avalanche region of semiconductor material adjacent said layer of oxide, said avalanche region having a doping density in the range of 5 × 10 15 to 1 × 10 17 /cm 3 ; an avalanche termination region of semiconductor material adjacent said avalanche region, said avalanche termination region having a doping density in the range of 2 × 10 17 to 5 × 10 17 /cm 3 , said avalanche termination region being of sufficient thickness to reduce the electric field within said avalanche termination region below the level sufficient for causing charge carrier multiplication; and a drift region of semiconductor material adjacent said avalanche termination region, said drift region having a doping density in the range of 3 × 10 15 to 3 × 10 16 /cm 3 , the length of said drift region being determined in accordance with a preferred operating frequency of said diode.