Process for producing a semiconductor device by vapor growth of single crystal Al2 O3

Claim 2

A process for the production of at least one semiconductor device comprising an Si-single crystal and an epitaxial Al 2 O 3 film on the Si-single crystal, said process comprising vapor growth of the Al 2 O 3 film on at least one piece of said Si-single crystal, wherein said vapor growth comprises steps of: (a) contacting an HCl gas with Al in a selected one of solid and liquid states, thereby obtaining a gaseous product; (b) transferring said resultant gaseous product toward the region of said Si-single crystal(s); (c) mixing said resultant gaseous product with a CO 2 gas; (d) heating said Si-single crystal(s) heating to a temperature of from 950 to 1350° C.; and (e) contacting said resultant gaseous product, mixed with CO 2 with said Si-single crystal(s), thereby growing the Al 2 O 3 as a single crystal on said Si-single crystal(s).

Claim 3

A process according to claim 1, wherein said Al is heated to a temperature of from 500 to 700° C.

Claim 4

A process according to claim 1, wherein said Si-single crystal(s) is heated to a temperature of from 1000 to 1300° C. to grow an α-Al 2 O 3 .

Claim 5

A process according to claim 1, wherein said Si-single crystal(s) is heated at a temperature of from 950 to less than 1000° C. to grow a γ-Al 2 O 3 .

Claim 6

A process according to claim 1, wherein said mixing step (c) is performed directly prior to said contacting step (e).

Claim 7

A process according to claim 1, wherein said transferring step (b) is performed by flowing at least one first carrier gas selected from the group consisting of N 2 , Ar, He and H 2 .

Claim 8

A process according to claim 6, wherein said Al is heated to a temperature of from 500 to 700° C.

Claim 9

A process according to claim 6, wherein said Si-single crystal(s) is heated to a temperature of from 1000 to 1300° C. to grow an α-Al 2 O 3 .

Claim 10

A process according to claim 6, wherein said Si-single crystal(s) is heated to a temperature of from 950 to less than 1000° C. to grow a γ-Al 2 O 3 .

Claim 11

A process according to claim 6, wherein said mixing step (c) is performed directly prior to said contacting step (e).

Claim 12

The process of claim 1 wherein said heating of said Si-single crystal(s) is by electrical induction heating.

Claim 13

A process for the production of at least one semiconductor device comprising an Si-single crystal, an epitaxial Al 2 O 3 film on said Si-single crystal and a single-crystal Si film on said Al 2 O 3 film, said process comprising vapor growth of said Al 2 O 3 film on at least one piece of said Si-single crystal, wherein said vapor growth further comprises steps of: (a) heating aluminum to a temperature of from 500 to 700° C.; (b) flowing HCl gas through a first passage to contact the HCl gas with said aluminum placed in the first passage, thereby obtaining a gaseous product from said contact; (c) flowing a first carrier gas through a second passage to carry said resultant gaseous product into the region of said Si-single crystal(s) placed in said second passage; (d) mixing said resultant gaseous product being carried by said first carrier gas with a CO 2 gas; (e) heating said Si-single crystal(s) to a temperature of from 950 to 1350° C.; and (f) contacting said resultant gaseous product mixed with CO 2 with said Si-single crystal(s), and wherein said process further comprises a step of forming said single-crystal Si film on each said Al 2 O 3 film, this forming step comprising: (g) stopping all the steps of said heating of said aluminum (a), said flowing of HCL gas (b), said mixing of CO 2 (d), and subsequently flowing SiH 4 through said second passage; (h) flowing at least one gas selected from the group consisting of H 2 , N 2 , Ar and He through said first passage; and, (i) heating said Si-single crystal to a temperature of from 900° to 1150° C.

Claim 14

A process for the production of at least one semiconductor device comprising an Si-single crystal, an epitaxial Al 2 O 3 film on said Si-single crystal and a single-crystal Si film on said Al 2 O 3 film, said process comprising vapor growth of said Al 2 O 3 film on at least one piece of said Si-single crystal, wherein said vapor growth further comprises steps of: (a) heating aluminum to a temperature of from 500 to 700° C.; (b) flowing HCl gas through a first passage to contact the HCl gas with said aluminum placed in the first passage, thereby obtaining a gaseous product from said contact; (c) flowing a first carrier gas through a second passage to carry said resultant gaseous product into the region of said Si-single crystal(s) placed in said second passage; (d) mixing said resultant gaseous product being carried by said first carrier gas with a CO 2 gas; (e) heating said Si-single crystal(s) to a temperature of from 950 to 1350° C.; and (f) contacting said resultant gaseous product mixed with CO 2 with said Si-single crystal(s), and wherein said process further comprises a step of forming said single-crystal Si film on each said Al 2 O 3 film, this forming step comprising: (g) stopping all the steps of said heating of said aluminum (a), said flowing of HCL gas (b), said mixing of CO 2 (d), and subsequently flowing SiH 4 through said second passage; (h) flowing at least one gas selected from the group consisting of H 2 , N 2 , Ar and He through said first passage; and, (i) heating said Si-single crystal to a temperature of from 900° to 1150° C.

Claim 15

A process according to claim 12, wherein said Si-single crystal(s) is heated in step (e) a temperature of from 1000° to 1300° C. to grow an α-Al 2 O 3 .

Claim 16

A process according to claim 12, wherein said Si-single crystal(s) is heated in step (e) to a temperature of from 950° to less than 1000° C. to grow a γ-Al 2 O 3 .

Claim 17

A process according to claim 12, wherein said mixing step (d) is performed directly prior to said contacting step (f).

Claim 18

A process according to claim 12, wherein said first carrier gas comprises at least one gas selected from the group consisting of N 2 , Ar, He and H 2 .

Claim 19

A process according to claim 12, wherein said second carrier gas comprises at least one gas selected from the group consisting of N 2 , Ar, He and H 2 .

Claim 20

The process of claim 12 wherein said heating of said Si-single crystal(s) is by electrical induction heating.

Claim 21

A process for the production of a semiconductor device comprising an Si-single crystal, an epitaxial Al 2 O 3 film on said Si-single crystal and a single-crystal Si film on said Al 2 O 3 film, said process comprising vapor growth of said Al 2 O 3 film on at least one piece of said Si-single crystal(s), wherein said vapor growth comprises steps of: (a) heating aluminum to a temperature of from 500° to 700° C.; (b) flowing an HCl gas through a first passage to contact the HCl gas with the aluminum placed in the first passage, thereby obtaining a gaseous product from the contact; (c) flowing a first carrier gas through a second passage to carry said resultant gaseous product into the region of said Si-single crystal(s) placed in a second passage; (d) mixing said resultant gaseous product being carried by the first carrier gas with a CO 2 gas; (e) heating said Si-single crystal(s) to a temperature of from 950° to 1350° C.; and (f) contacting said resultant gaseous product mixed with CO 2 , with said Si-single crystal(s), and wherein said process further comprises forming said single-crystal Si film on each Al 2 O 3 film, this forming step comprising: (g) stopping all the steps of said heating of said aluminum (a), said flowing of HCl gas (b), said mixing of CO 2 (d) and subsequently flowing through said second passage at least one gas selected from the group consisting of SiCl 4 , SiH 3 Cl, SiH 2 Cl 2 and SiHCl 3 ; (h) flowing H 2 gas through said first passage; and, (i) heating said Si-single crystal(s) to a temperature of from 1100 to 1250° C.

Claim 22

A process for the production of a semiconductor device comprising an Si-single crystal, an epitaxial Al 2 O 3 film on said Si-single crystal and a single-crystal Si film on said Al 2 O 3 film, said process comprising vapor growth of said Al 2 O 3 film on at least one piece of said Si-single crystal(s), wherein said vapor growth comprises steps of: (a) heating aluminum to a temperature of from 500° to 700° C.; (b) flowing an HCl gas through a first passage to contact the HCl gas with the aluminum placed in the first passage, thereby obtaining a gaseous product from the contact; (c) flowing a first carrier gas through a second passage to carry said resultant gaseous product into the region of said Si-single crystal(s) placed in a second passage; (d) mixing said resultant gaseous product being carried by the first carrier gas with a CO 2 gas; (e) heating said Si-single crystal(s) to a temperature of from 950° to 1350° C.; and (f) contacting said resultant gaseous product mixed with CO 2 , with said Si-single crystal(s), and wherein said process further comprises forming said single-crystal Si film on each Al 2 O 3 film, this forming step comprising: (g) stopping all the steps of said heating of said aluminum (a), said flowing of HCl gas (b), said mixing of CO 2 (d) and subsequently flowing through said second passage at least one gas selected from the group consisting of SiCl 4 , SiH 3 Cl, SiH 2 Cl 2 and SiHCl 3 ; (h) flowing H 2 gas through said first passage; and, (i) heating said Si-single crystal(s) to a temperature of from 1100 to 1250° C.

Claim 23

A process according to claim 19, wherein said Si-single crystal(s) is heated in step (e) to a temperature of from 1000° to 1200° C. to grow an α-Al 2 O 3 .

Claim 24

A process according to claim 19, wherein said Si-single crystal(s) is heated in step (e) to a temperature of from 950° to less than 1000° C. to grow a γ-Al 2 O 3 .

Claim 25

A process according to claim 19, wherein said mixing step (d) is performed directly prior to said contacting step (e).

Claim 26

A process according to claim 19, wherein said first carrier gas comprises at least one gas selected from the group consisting of N 2 , Ar, He and H 2 .

Claim 27

A process according to claim 19, wherein said H 2 gas in step (h) is carried by at least one carrier gas comprising at least one gas selected from the group consisting of N 2 , Ar, and H 2 .

Claim 28

The process of claim 19 wherein said heating of said Si-single crystal(s) is by electrical induction heating.