Method of manufacturing a semiconductor device by vapor-deposition

Claim 1

IN THE METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, THE STEPS COMPRISING PROVIDING A BODY OF SEMICONDUCTIVE MATERIAL WITHIN A GIVEN APPARATUS, VAPOR-DEPOSITING ON A SURFACE OF SAID BODY A GROWN FIRST LAYER OF SEMICONDUCTIVE MATERIAL HAVING PROPERTIES DIFFERENT FROM THAT POSSESSED BY THE BODY, AS A SUCCESSIVE STEP IN THE SAME METHOD AND WITHIN THE SAME APPARATUS VAPOR-DEPOSITING ON THE FRESHLY-FORMED FIRST LAYER OF SEMICONDUCTIVE MATERIAL AND EXTENDING OVER SUBSTANTIALLY THE WHOLE EXPOSED SURFACE THEREOF, A CONTINUOUS, PROTECTIVE, SECOND LAYER OF SILICON OXIDE WHICH IS SUBSTANTIALLY IMPERVIOUS TO CONTAMINANTS IN THE OUTSIDE ATMOSPHERE BEFORE EXPOSING THE BODY AND THE FIRST LAYER TO THE OUTSIDE ATMOSPHERE AND WITHOUT AN INTERVENING ETCHING, CLEANING STEP, AND THEREAFTER, FOR FURTHER PROCESSING INTO AT LEAST ONE DEVICE, REMOVING THE BODY FROM THE SAID GIVEN APPARATUS AND EXPOSING SAME TO THE OUTSIDE ATMOSPHERE WHILE THE PROTECTIVE LAYER REMAINS INTACT BLOCKING ACCESS OF UNDESIRED CONTAMINANTS TO THE FRESHLY-FORMED FIRST LAYER.