Method for making diodes and products resulting therefrom

Claim 1

A PROCESS FOR MAKING MULTIPLE DIODES ON A COMMON BASE, EACH DIODE COMPRISING A METALLIC BASE HAVING FORMED THEREON A FIRST LAYER OF SEMI-CONDUCTOR MATERIAL SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM, A SECOND LAYER OF POROUS CERAMIC DIELECTRIC MATERIAL, AND A THIRD LAYER OF CONDUCTIVE METAL, SAID PROCESS COMPRISING ENCLOSING A METALLIC RIBBON IN A VACUUM CHAMBER MAINTAINED AT A PRESSURE OF THE ORDER OF 10-6MM. OF MERCURY, HEATING A SEMI-CONDUCTOR MATERIAL WITHIN SAID CHAMBER TO PRODUCE THERMAL RADIATION OF SAID MATERIAL, SUBJECTING SAID RIBBON TO SAID RADIATION THROUGH A SHIELD TO DEPOSIT A LAYER OF SAID SEMI-CONDUCTOR ONLY UPON SPACED LINER PORTIONS OF SAID RIBBON, HEATING SAID SEMI-CONDUCTOR LAYER TO EFFECT CRYSTALLIZATION THEREOF, APPLYING A POROUS CERAMIC LAYER OVER SAID LAYER OF SEMI-CONDUCTOR MATERIAL, AND SUBJECTING SAID RIBBON TO RADIATION FROM A SOURCE OF VAPORIZED METAL TRANSMITTED THROUGH SAID SHIELD TO FORM SEPARATE CONDUCTIVE LAYERS OVER THE LINEAR SECTIONS OF SAID RIBBONS WHICH ARE COVERED BY SAID SEMI-CONDUCTOR LAYER.