Patent US4133690A successfully refreshed from Google Patents.
US4133690A
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Glass composition for passivating semiconductor surfaces
Assignee: Schott AG
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Filing: 1976-04-19
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Granted: 1979-01-09
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Expires: 1996-04-19
Abstract
Abstract Glass compositions useful for passivating silicon semiconductor elements or bodies and to semiconductor elements or bodies coated by such glass compositions. The glass compositions are applied onto the surface of the semiconductor in the form of a finely ground powder and thereafter fused on at least a portion of the semiconductor element. The compositions comprise: (A) glass and (B) powdered cordierite in an amount effective to provide a coefficient of thermal expansion of up to 40 × 10 -7 /° C for said composition within the temperature range of 20°-300° C. The compositions are compatible with the thermal expansion of the silicon semiconductor and capable of adhering to the silicon in layers greater than 10 μm without the formation of cracks.
Inventors
- 👤 Gerd Muller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:29
CPC Classifications
C; C03; C03C; C03C14/00; C03C14/004; H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/43; C03C2214/00; C03C2214/04; Y; Y10; Y10T; Y10T428/00; Y10T428/25; Y10T428/252
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
122 words
Glass compositions useful for passivating silicon semiconductor elements which are applied on the surface of said semiconductor in the form of a finely ground powder and thereafter fused on at least a portion of said semiconductor element without any gap, said composition comprising: (A) glass capable of passivating semiconductor surfaces, in combination with (B) powdered cordierite in an amount effective to provide a coefficient of thermal expansion of up to 40 × 10 -7 /° C. for said composition comprising (A) and (B) within the temperature range of 20°-300° C., whereby said compositions are compatible with the thermal expansion of said silicon semiconductor and capable of adhering to the silicon in layers of greater than 10 μm without the formation of cracks.
Claim 2
Dependent Claim
122 words
Glass compositions useful for passivating silicon semiconductor elements which are applied on the surface of said semiconductor in the form of a finely ground powder and thereafter fused on at least a portion of said semiconductor element without any gap, said composition comprising: (A) glass capable of passivating semiconductor surfaces, in combination with (B) powdered cordierite in an amount effective to provide a coefficient of thermal expansion of up to 40 × 10 -7 /° C. for said composition comprising (A) and (B) within the temperature range of 20°-300° C., whereby said compositions are compatible with the thermal expansion of said silicon semiconductor and capable of adhering to the silicon in layers of greater than 10 μm without the formation of cracks.
Claim 3
Dependent Claim
27 words
The composition of claim 1, wherein said cordierite consists essentially of about 2 moles MgO, 2 moles Al 2 O 3 and 5 moles SiO 2 .
Claim 4
Dependent Claim
15 words
The composition of claim 1, wherein component (A) has a fusing temperature below 1000° C.
Claim 5
Dependent Claim
70 words
The composition of claim 1, wherein component (A) consists essentially of the components: (a) SiO 2 , Al 2 O 3 and PbO, (b) SiO 2 , B 2 O 3 and ZnO, or (c) mixtures of said components wherein each of said mixtures has a coefficient of thermal expansion of up to about 70 × 10 -7 /° C. in the temperature range of from 20° to 200° C.
Claim 6
Dependent Claim
67 words
The composition of claim 4, wherein component (A) consists essentially of (a) about 60 weight percent ZnO, (b) about 20-30 weight percent B 2 O 3 , (c) about 5-15 weight percent SiO 2 and (d) up to 5 weight percent of at least one oxide selected from the group consisting of PbO, Sb 2 O 3 , CeO 2 , SeO 2 and BiO 2 .
Claim 7
Dependent Claim
46 words
The composition of claim 4, wherein component (A) consists essentially of: (a) about 10-50 weight percent SiO 2 , (b) about 0-30 weight percent B 2 O 3 , (c) about 0-20 weight percent Al 2 O 3 , and (d) about 35-75 weight percent PbO.
Claim 8
Dependent Claim
35 words
The composition of claim 6, wherein component (A) consists essentially of: (a) about 40-50 weight percent PbO, (b) about 40 weight percent SiO 2 and (c) about 10 weight percent B 2 O 3 .
Claim 9
Dependent Claim
38 words
The composition of claim 6, wherein component (A) consists essentially of: (a) 45 weight percent PbO, (b) 42 weight percent SiO 2 , (c) 10 weight percent B 2 O 3 , and (d) 45 weight percent PbO.
Claim 10
Dependent Claim
20 words
The composition of claim 8 containing 20 weight percent of component (B) based on the total weight of the composition.
Claim 11
Dependent Claim
33 words
The composition of claim 6, wherein component (A) consists essentially of: (a) 50 weight percent PbO, (b) 40 weight percent SiO 2 , and (c) 10 weight percent Al 2 O 3 .
Claim 12
Dependent Claim
19 words
The composition of claim 10, containing 10 weight percent of cordierite based on the total weight of the composition.
Claim 13
Dependent Claim
36 words
The composition of claim 1, wherein said cordierite powder is produced by crystallization of a glass composition having an approximate molar ratio of 2 MgO × 2 Al 2 O 3 × 5 SiO 2 .
Claim 14
Dependent Claim
19 words
In combination, a semiconductor body having a surface and, on said surface, a glass coating composition of claim 1.
Claim 15
Dependent Claim
28 words
The semiconductor combination of claim 13, wherein said cordierite consists essentially of about 2 moles MgO, 2 moles Al 2 O 3 and 5 moles SiO 2 .
Claim 16
Dependent Claim
16 words
The semiconductor combination of claim 13, wherein component (A) has a fusing temperature below 1000° C.
Claim 17
Dependent Claim
71 words
The semiconductor combination of claim 13, wherein component (A) consists essentially of the components: (a) SiO 2 , Al 2 O 3 and PbO, (b) SiO 2 , B 2 O 3 and ZnO, or (c) mixtures of said components wherein each of said mixtures has a coefficient of thermal expansion of up to about 70 × 10 -7 /° C. in the temperature range of from 20° to 200° C.
Claim 18
Dependent Claim
68 words
The semiconductor combination of claim 16, wherein component (A) consists essentially of (a) about 60 weight percent ZnO, (b) about 20-30 weight percent B 2 O 3 , (c) about 5-15 weight percent SiO 2 and (d) up to 5 weight percent of at least one oxide selected from the group consisting of PbO, Sb 2 O 3 , CeO 2 , SeO 2 and BiO 2 .
Claim 19
Dependent Claim
46 words
The semiconductor combination of claim 16, wherein component (A) consists essentially of: (a) about 10-50 weight percent SiO 2 , (b) about 0-30 weight percent B 2 O 3 , (c) about 0-20 weight percent Al 2 O 3 and (d) about 35-75 weight percent PbO.
Claim 20
Dependent Claim
36 words
The semiconductor combination of claim 18, wherein component (A) consists essentially of: (a) about 40-50 weight percent PbO, (b) about 40 weight percent SiO 2 and (c) about 10 weight percent B 2 O 3 .
Claim 21
Dependent Claim
38 words
The semiconductor combination of claim 19, wherein component (A) consists essentially of: (a) 45 weight percent PbO, (b) 42 weight percent SiO 2 , (c) 10 weight percent B 2 O 3 and (d) 45 weight percent PbO.
Claim 22
Dependent Claim
21 words
The semiconductor combination of claim 20, containing 20 weight percent of component (B) based on the total weight of the composition.
Claim 23
Dependent Claim
34 words
The semiconductor combination of claim 18, wherein component (A) consists essentially of: (a) 50 weight percent PbO, (b) 40 weight percent SiO 2 , and (c) 10 weight percent Al 2 O 3 .
Claim 24
Dependent Claim
20 words
The semiconductor combination of claim 22, containing 10 weight percent of cordierite based on the total weight of the composition.
Claim 25
Dependent Claim
37 words
The semiconductor combination of claim 13, wherein said ocrdierite powder is produced by crystallization of a glass composition having an approximate molar ratio of 2 MgO × 2 Al 2 O 3 × 5 SiO 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-08 | 1982-07-10 | 1983-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-08 | 1986-07-10 | 1987-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-08 | 1990-07-10 | 1991-01-09 | $7700.00 | Window Closed / Lapsed |