Patent US4132996A successfully refreshed from Google Patents.
US4132996A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electric field-controlled semiconductor device
Assignee: General Electric Co
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Filing: 1976-11-08
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Granted: 1979-01-02
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Expires: 1996-11-08
Abstract
Abstract An electric field-controlled thyristor having improved voltage blocking characteristics comprises a semiconductor substrate with a cathode region in one major surface and interdigitated anode and gate regions in the other major surface. The thyristor includes a single high voltage junction which is capable of blocking voltages of either positive or negative polarity by the application of a control voltage, which is a fraction of the blocking voltage, between the anode and gate regions.
Inventors
- 👤 B. Jayant Baliga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:02
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/211; H10D12/212; Y; Y10; Y10S; Y10S148/00; Y10S148/088
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
78 words
An electric field-controlled thyristor comprising: a semiconductor substrate of one type conductivity and having opposed major surfaces; a cathode region of said one type conductivity in one of said major surfaces and of higher conductivity than the adjoining portion of said substrate; a plurality of interconnecting grid regions of opposite type conductivity in the other major surface; and an anode region of opposite type conductivity in said other major surface and within the interstices of adjacent grid regions.
Claim 2
Dependent Claim
78 words
An electric field-controlled thyristor comprising: a semiconductor substrate of one type conductivity and having opposed major surfaces; a cathode region of said one type conductivity in one of said major surfaces and of higher conductivity than the adjoining portion of said substrate; a plurality of interconnecting grid regions of opposite type conductivity in the other major surface; and an anode region of opposite type conductivity in said other major surface and within the interstices of adjacent grid regions.
Claim 3
Dependent Claim
21 words
The electric field-controlled thyristor of claim 1 further comprising means for controlling the current flow between said anode and cathode regions.
Claim 4
Dependent Claim
19 words
The electric field-controlled thyristor of claim 2 wherein said means include electrodes contacting said anode, cathode and grid regions.
Claim 5
Dependent Claim
17 words
The electric field-controlled thyristor of claim 3 further comprising voltage source means operatively connected to said electrodes.
Claim 6
Dependent Claim
27 words
The electric field-controlled thyristor of claim 4 wherein said voltage source means comprises a first voltage source electrically connected to said grid electrode and said anode electrode.
Claim 7
Dependent Claim
34 words
The electric field-controlled thyristor of claim 5 further comprising a load and a second voltage source, said load connected in electrical series relation with said second voltage source and said anode and cathode electrodes.
Claim 8
Dependent Claim
32 words
The electric field-controlled thyristor of claim 1 further comprising means for applying a bias voltage between said grid and anode regions for pinching off current flow between said anode and cathode regions.
Claim 9
Dependent Claim
50 words
The electric field-controlled thyristor of claim 1 further comprising: first voltage source means for applying a bias voltage to said grid and anode regions; a load impedance; and second voltage source means, said load connected in electrical series relation with said second voltage source and said anode and cathode electrodes.
Claim 10
Dependent Claim
22 words
The electric field-controlled thyristor of claim 1 further comprising: means for electrically short-circuiting said anode and grid regions for selected time periods.
Claim 11
Dependent Claim
37 words
The electric field-controlled thyristor of claim 1 wherein said cathode region is substantially co-planar with said one surface of said substrate and said grid regions is of a greater depth in said substrate than said anode region.
Claim 12
Dependent Claim
29 words
The electric field-controlled thyristor of claim 1 wherein said anode region is formed in a pocket region of said one conductivity type but of higher conductivity than said substrate.
Claim 13
Dependent Claim
27 words
The electric field-controlled thyristor of claim 1 wherein said anode region is surrounded by a region of said one conductivity type but higher conductivity than said substrate.
Claim 14
Dependent Claim
33 words
The electric field-controlled thyristor of claim 1 further comprising a plurality of anode regions in said substrate electrically connected together and a plurality of buried grid regions in said substrate electrically connected together.
Claim 15
Dependent Claim
21 words
The electric field-controlled thyristor of claim 5 further comprising termination means for the junction between said grid regions and said substrate.
Claim 16
Dependent Claim
33 words
The electric field controlled thyristor of claim 1 further comprising a plurality of anode regions in the other major surface, each of said anode regions located within the interstices of adjacent grid regions.
Claim 17
Dependent Claim
83 words
The electric field controlled thyristor of claim 15 further comprising means for applying a voltage source between said anode and cathode regions, said thyristor characterized by a voltage blocking capability in forward and reverse directions, the magnitude of said voltage blocking capability limited by the larger of the breakdown voltage of the semiconductor junction formed between said grid region and said substrate and G times the breakdown voltage between the grid and anode regions, where G is the gain function of said thyristor.
Claim 18
Dependent Claim
16 words
The electric field controlled thyristor of claim 16 further comprising termination means for said grid-substrate junction.
Claim 19
Dependent Claim
26 words
The electric field controlled thyristor of claim 16 further comprising a region of one conductivity type of higher conductivity than said substrate surrounding said anode regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-01 | 1982-07-03 | 1983-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-01 | 1986-07-03 | 1987-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-01 | 1990-07-03 | 1991-01-02 | $7700.00 | Window Closed / Lapsed |